产品概述
描述
The M40SZ100W NVRAM controller is a self-contained device which converts a standard low-power SRAM into a non-volatile memory. A precision voltage reference and comparator monitors the VCCinput for an out-of-tolerance condition.
When an invalid VCCcondition occurs, the conditioned chip enable output (ECON)is forced inactive to write protect the stored data in the SRAM. During a power failure, the SRAM is switched from the VCCpin to the external battery to provide the energy required for data retention. On a subsequent power-up, the SRAM remains write-protected until a valid power condition returns.
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所有功能
- Convert low power SRAMs into NVRAMs
- 3 V operating voltage
- Precision power monitoring and power switching circuitry
- Automatic write-protection when VCCis out-of-tolerance
- Choice of supply voltage and power-fail deselect voltage:
- VCC= 2.7 to 3.6 V; 2.55 V ≤ VPFD≤ 2.70 V
- Reset output (RST) for power on reset
- 1.25 V reference (for PFI/PFO)
- Less than 15 ns chip enable access propagation delay
- Battery low pin (BL)
- RoHS compliant
- Lead-free second level interconnect
电路原理图
EDA符号、封装和3D模型
STMicroelectronics - M40SZ100W
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符号
封装
3D模型
全部资源
| 资源标题 | 版本 | Latest update |
|---|
IBIS models (2)
| 资源标题 | 版本 | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 | |
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
样片和购买
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| 产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | RST Threshold (V) (typ) | Country of Origin | Budgetary Price (US$)*/Qty | 单价(US$) | Country of Origin | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | ||||||||||||||
| M40SZ100WMQ6F | distributors 无法联系到经销商，请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Tape and Reel | SO-16 | -40 | 85 | 2.6 | MOROCCO | | 4.1895 | MOROCCO | ||
distributors
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