Silicon carbide - The latest breakthrough in high-voltage switching and rectification
ST’s portfolio of silicon carbide devices incluses STPOWER SiC MOSFETs ranging from 650 to 1700 V with the industry’s highest junction temperature rating of 200 °C for more efficient and simplified designs, and STPOWER SiC diodes ranging from 600 to 1200 V which feature negligible switching losses and 15% lower forward voltage (VF) than standard silicon diodes.
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STPOWER SiC MOSFET
Main characteristics:
- Automotive-grade (AG) qualified devices
- Very high temperature handling capability (max. Tj = 200 °C)
- Very low switching losses (minimal variation versus temperature) allowing to work at very high switching frequency
- Low on-state resistance over the temperature range
- Simple to drive
- Very fast and robust intrinsic body diode proved
STPOWER SiC Diodes
Main characteristics:
- Very low forward conduction losses for increased efficiency
- Low switching losses for reduced size and cost of the power converter
- Soft switching behavior (low EMC impact), simplifying certification and speeding time-to market
- High forward surge capability for increased robustness and reliability
- High power integration (dual diodes) for reduced PCB form factor
- High-temperature capability with Tj max = 175 °C
- AEC-Q101-qualified and PPAP-capable automotive-grade SiC diodes
精选 视频
Key benefits of the Silicon Carbide technology in car electrification application
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