Silicon carbide - The latest breakthrough in high-voltage switching and rectification
ST’s portfolio of silicon carbide devices includes 650 / 1200 V SiC MOSFETs featuring the industry’s highest junction temperature rating of 200 °C for more efficient and simplified designs, and SiC diodes ranging from 600 to 1200 V which feature negligible switching losses and 15% lower forward voltage (VF) than standard silicon diodes.
碳化硅MOSFET
Main characteristics:
- Industry’s highest operating junction temperature (Tj max) of 200 °C for reduced cooling requirements and heatsink
- Low on-state resistance over the entire temp range to 200 °C for reduced cooling requirements with a higher system efficiency
- Extremely low power losses
- Small increase of on-resistance versus temperature
Very easy to drive (resulting in smaller component count) - High operating frequency for reduced switching losses and smaller and lighter systems
- Very fast and robust intrinsic body diode
SiC碳化硅二极管
Main characteristics:
- Very low forward conduction losses for increased efficiency
- Low switching losses for reduced size and cost of the power converter
- Soft switching behavior (low EMC impact), simplifying certification and speeding time-to market
- High forward surge capability for increased robustness and reliability
- High power integration (dual diodes) for reduced PCB form factor
- High-temperature capability with Tj max = 175 °C
- AEC-Q101-qualified and PPAP-capable automotive-grade SiC diodes
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Key benefits of the Silicon Carbide technology in car electrification application
