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碳化硅（SiC）器件

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碳化硅 - 高压开关和整流的最新突破

意法半导体的碳化硅器件包括STPOWERSiC MOSFET（具有650 - 1700 V电压范围、业界最高的200 °C额定结温，可据此作出更有效、简化的设计）和STPOWERSiC二极管（电压范围600 - 1200 V，具有负开关损耗以及比标准硅二极管低15%的前向电压（VF））。

STPOWER SiC MOSFET
SiC MOSFET

主要特性：

  • 汽车级（AG）合格器件
  • 超高温处理能力（max.TJ = 200 °C）
  • 极低的开关损耗（随温度变化影响最小）允许工作在非常高的开关频率
  • 在温度范围内具有低导通电阻
  • 易于驱动
  • 稳定的超快速本体二极管

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STPOWER SiC二极管
SiC二极管

主要特性：

  • 超低前向导通损耗，增加了效率
  • 低开关损耗，降低了功率转换器的尺寸和成本
  • 软开关行为（低EMC影响），简化了认证，加速了投放市场的时间
  • 高前向浪涌能力，增加了稳定性和可靠性
  • 高功耗集成（双二极管），降低了PCB尺寸
  • 高温度能力，Tj max = 175 °C
  • 具有AEC-Q101认证和PPAP能力的汽车级SiC二极管 

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