Silicon Carbide - SiC MOSFETs and SiC Diodes, Industrial and Automotive

Silicon carbide - The latest breakthrough in high-voltage switching and rectification

ST’s portfolio of silicon carbide devices includes 650 / 1200 V SiC MOSFETs featuring the industry’s highest junction temperature rating of 200 °C for more efficient and simplified designs, and SiC diodes ranging from 600 to 1200 V which feature negligible switching losses and 15% lower forward voltage (V_F) than standard silicon diodes.

SiC MOSFETs

Main characteristics:

Industry’s highest operating junction temperature (Tj max) of 200 °C for reduced cooling requirements and heatsink
Low on-state resistance over the entire temp range to 200 °C for reduced cooling requirements with a higher system efficiency
Extremely low power losses
Small increase of on-resistance versus temperature
Very easy to drive (resulting in smaller component count)
High operating frequency for reduced switching losses and smaller and lighter systems
Very fast and robust intrinsic body diode

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SiC Diodes

Main characteristics:

Very low forward conduction losses for increased efficiency
Low switching losses for reduced size and cost of the power converter
Soft switching behavior (low EMC impact), simplifying certification and speeding time-to market
High forward surge capability for increased robustness and reliability
High power integration (dual diodes) for reduced PCB form factor
High-temperature capability with T_jmax = 175 °C
AEC-Q101-qualified and PPAP-capable automotive-grade SiC diodes

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碳化硅（SiC）器件

SiC MOSFETs

SiC Diodes

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