ST 的碳化硅二极管产品系列电压范围从600到1200 V，包括单、双二极管。 它们有多种封装，从DPAK到TO-247以及绝缘的TO-220AB/AC，为设计者们提供了极大的灵活性，具有高效、稳定和快速投放市场等优势。
相比于硅，碳化硅有优越的物理属性，SiC肖特基整流器具有好于4倍的动态特性和降低15%的前向电压（VF）。
ST 的SiC二极管显示了显著的功耗降低，通常用于硬开关应用，如高端服务器和电信供电，它还能用于太阳能逆变器、电机驱动器和无中断供电（UPS）。
ST 的汽车级650 V SiC二极管 – 具有AEC-Q101认证和PPAP能力 – 具有市场上最低的前向压降（VF），在电动车辆（EV）应用中具有最优的效率。
主要特性：
- 高效功率转换器（得益于低前向导通和开关损耗）
- 与双二极管高功耗集成，降低了PCB尺寸
- 显著降低了功率转换器尺寸和成本。
低EMC效应、简化认证和缩短产品上市时间 - 自然的稳定性确保了超高的可靠性
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High efficiency 3-phase PFC with SiC devices & digital control
特别推荐
1200 V SiC diodes deliver superior efficiency and robustness
Our range of 1200 V silicon-carbide (SiC) JBS (Junction Barrier Schottky) diodes meets designers' needs for superior efficiency, low weight, small size, and improved thermal characteristics for performance-oriented applications.
Offering the best-in-class forward voltage (lowest VF) and state-of-the-art robustness, our 1200 V SiC diodes provide extra freedom to achieve high efficiency and reliability with lower current rating and therefore lower cost, while reducing operating temperature and extending application lifetime. They ensure a perfect fit in every switch mode converter and inverter - SMPS, UPS, solar, motor drives- where extreme power density and efficiency are needed.
Covering current ratings from 2 to 40 A, our 1200 V SiC diode family includes industrial-dedicated as well as automotive-qualified devices in surface-mount DPAK HV (high-voltage) and D²PAK, or through-hole TO-220AC and TO-247LL (long-lead) packages.
ST's 1200V SiC allows reaching the highest standards and smallest form factor.