ST 的碳化硅二极管产品系列电压范围从600到1200 V,包括单、双二极管。 它们有多种封装,从DPAK到TO-247以及绝缘的TO-220AB/AC,为设计者们提供了极大的灵活性,具有高效、稳定和快速投放市场等优势。

ST 的SiC二极管显示了显著的功耗降低,通常用于硬开关应用,如高端服务器和电信供电,它还能用于太阳能逆变器、电机驱动器和无中断供电(UPS)。
ST 的汽车级650 V SiC二极管 – 具有AEC-Q101认证和PPAP能力 – 具有市场上最低的前向压降(VF),在电动车辆(EV)应用中具有最优的效率。

  • 高效功率转换器(得益于低前向导通和开关损耗)
  • 与双二极管高功耗集成,降低了PCB尺寸
  • 显著降低了功率转换器尺寸和成本。
  • 自然的稳定性确保了超高的可靠性

1200 V SiC diodes deliver superior efficiency and robustness

Our range of 1200 V silicon-carbide (SiC) JBS (Junction Barrier Schottky) diodes meets designers' needs for superior efficiency, low weight, small size, and improved thermal characteristics for performance-oriented applications.

Offering the best-in-class forward voltage (lowest VF) and state-of-the-art robustness, our 1200 V SiC diodes provide extra freedom to achieve high efficiency and reliability with lower current rating and therefore lower cost, while reducing operating temperature and extending application lifetime. They ensure a perfect fit in every switch mode converter and inverter - SMPS, UPS, solar, motor drives- where extreme power density and efficiency are needed.

Covering current ratings from 2 to 40 A, our 1200 V SiC diode family includes industrial-dedicated as well as automotive-qualified devices in surface-mount DPAK HV (high-voltage) and D²PAK, or through-hole TO-220AC and TO-247LL (long-lead) packages.

ST's 1200V SiC allows reaching the highest standards and smallest form factor.