使用STPOWER SiC MOSFET创建比以往更高效、更紧凑的系统
借助SiC MOSFET，将创新宽带隙材料（WBG）的优势融入下一个设计。意法半导体的碳化硅MOSFET具有650 V至2200 V的扩展电压范围，是最先进的技术平台之一，具有出众的开关性能和极低的单位面积导通电阻。
我们SiC MOSFET的主要特点包括：
- 汽车级（AG）合格器件
- 应对超高温的能力（最高TJ = 200°C）
- 超高开关工作频率和极低开关损耗
- 低导通状态电阻
- 栅极驱动可兼容现有IC
- 稳定的超快速本体二极管
我们的SiC MOSFET产品组合包括最先进的封装（HiP247、H2PAK-7、TO-247长引线、STPAK和HU3PAK），专为满足汽车和工业应用的严格要求而设计。
除了最新封装技术，我们的SiC MOSFET（包括G3器件）还可采用裸露晶片形式。符合最严格的汽车级要求（包括晶圆级老化（WLBI）和已知良好晶片（KGD）过程），裸露晶片可采用重构晶圆或卷盘封装。
查看我们的SiC创新和技术页面。
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eDesignSuite
eDesignSuite is a comprehensive set of easy-to-use design-aid utilities ready to help you streamline the system development process with a wide range of ST products.
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Choose design tool: 
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Specify input/output power for each node in the tree Check for consistency Design each individual node Choose design tool: 
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Help select the right ViPOWER Automotive power device Supports load-compatibility, wiring harness optimization, fault condition impact and diagnostic analysis Supports various PCB configurations 
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Build simple schematics and firmware inputs in minutes Quickly generate reliable estimates of: Battery life System power consumption Bill of materials costs
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Handles most common configurations Returns circuit components values Provides I/O signal waveforms Inverting, Non Inverting, Window 
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Active Filters
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