使用STPOWER SiC MOSFET创建比以往更高效、更紧凑的系统
借助SiC MOSFET，将创新宽带隙材料（WBG）的优势融入下一个设计。意法半导体的碳化硅MOSFET具有650 V至2200 V的扩展电压范围，是最先进的技术平台之一，具有出众的开关性能和极低的单位面积导通电阻。
我们SiC MOSFET的主要特点包括：
- 汽车级（AG）合格器件
- 应对超高温的能力（最高TJ = 200°C）
- 超高开关工作频率和极低开关损耗
- 低导通状态电阻
- 栅极驱动可兼容现有IC
- 稳定的超快速本体二极管
我们的SiC MOSFET产品组合包括最先进的封装（HiP247、H2PAK-7、TO-247长引线、STPAK和HU3PAK），专为满足汽车和工业应用的严格要求而设计。
除了最新封装技术，我们的SiC MOSFET（包括G3器件）还可采用裸露晶片形式。符合最严格的汽车级要求（包括晶圆级老化（WLBI）和已知良好晶片（KGD）过程），裸露晶片可采用重构晶圆或卷盘封装。
查看我们的SiC创新和技术页面。
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Key benefits of the Silicon Carbide technology in car electrification application
特别推荐
- SCTW100N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package
- SCT20N120H Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
- SCTH100N120G2-AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
- SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
- SCTW40N120G2VAG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 package
- SCTH40N120G2V-7 Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an H2PAK-7 package
- SCT018H65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HU2PAK-7 package
- SCTW35N65G2VAG Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
- SCTH60N120G2-7 Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an H2PAK-7 package
- SCT50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
- SCTH100N65G2-7AG Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 95 A in an H2PAK-7 package
- SCTWA90N65G2V Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package
- SCTW60N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 package
- SCTWA60N12G2-4AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247-4 package
- SCTWA40N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 long leads package
- SCTW60N120G2 Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247 package
- SCTWA40N12G24AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
- SCTWA60N120G2-4 Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247-4 package
- SCTWA60N120G2AG Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 long leads package
- SCTWA10N120 Silicon carbide Power MOSFET 1200 V, 12 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 long leads package
- SCT10N120H Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
- SCT070HU120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
- SCT070H120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCTWA70N120G2V Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
- SCTH40N120G2V7AG Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H2PAK-7 package
- SCT1000N170 Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT012H90G3AG Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT1000N170AG Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT040H120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
- SCT20N170AG Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mOhm, 43 A in an HiP247 package
- SCT012W90G3AG Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247 package
- SCTHS250N65G3 Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mOhm typ., 207 A in a STPAK package
- SCTW35N65G2V Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 package
- SCTWA20N120 Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 long leads package
- SCTW70N120G2V Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
- SCTWA40N120G2V-4 Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247-4 package
- SCTL90N65G2V Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
- SCTWA70N120G2V-4 Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
- SCTWA40N120G2V Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
- SCTWA90N65G2V-4 Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
- SCT055HU65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HU3PAK package
- SCT30N120 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
- SCT10N120 Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
- SCT30N120H Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an H2PAK-2 package
- SCTW40N120G2V Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
- SCT20N120AG Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
- SCTWA30N120 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
- SCT10N120AG Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
- SCT011H75G3AG Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an H2PAK-7 package
- SCTHS300N75G3AG Automotive-grade silicon carbide Power MOSFET 750 V, 6.5 mOhm typ., 300 A in a STPAK package
- SCT020H120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an H2PAK-7 package
- SCTHS200N120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 9.3 mOhm typ., 170 A in a STPAK package
- SCTW90N65G2V Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
- SCTH90N65G2V-7 Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
- SCTH70N120G2V-7 Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 90 A in an H2PAK-7 package
- SCT040W120G3AG Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT20N170 Silicon carbide Power MOSFET 1700 V, 43 A, 64 mOhm (typ., TJ = 25 C) in an HiP247 package
- SCTW100N65G2AG Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an HiP247 package
- SCTH35N65G2V-7 Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an H2PAK-7 package
- SCTWA35N65G2V Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 long leads package
- SCTH35N65G2V-7AG Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
- SCT040HU65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an HU3PAK package
- SCT040H65G3SAG Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 straight leads package
- SCT040H65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package
- SCT20N120 Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
- SCTWA35N65G2V4AG Automotive-grade silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package
- SCTWA35N65G2VAG Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package
- SCTL35N65G2V Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
- SCTWA35N65G2V-4 Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package