Conference Paper
应用手册
Flyers
- 1200V Silicon Carbide diodes – from 2A to 40A – in through-hole and surface-mount packages (1-page summary)
- STPOWER Gen3 SiC MOSFETs
- STPOWER SiC MOSFET : The real breakthrough in high-voltage switching
- SiC MOSFET, the real breakthrough in high-voltage switching
- SiC MOSFETs: The real breakthrough in high-voltage switching