JANS2ST3360K

NRND
Design Win

60 V、0.8 A高可靠性NPN-PNP互补晶体管

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产品概述

描述

The JANS2ST3360K power bipolar transistor is a fast, dual complementary matched device (NPN and PNP) housed in a single Flat-8 hermetic package, intended for aerospace Hi-Rel and Rad-hard applications. ST’s high current density technology ensures high levels of electrical and switching performance. Due to its radiation hardness specific design, the post radiation performance makes it the best in its class. The high switching performance allows this device to be particularly suitable for power MOSFET driver applications. It is qualified in the JANS system as per MIL-PRF19500. In case of mismatches between this datasheet and the specification of the agency, the latter takes precedence.

  • 所有功能

    • Very low collector-emitter saturation voltage
    • High current gain characteristic
    • Fast-switching speed: FT= 130 MHz
    • Hermetic package
    • JANS qualified

EDA符号、封装和3D模型

STMicroelectronics - JANS2ST3360K

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Symbols

符号

Footprints

封装

3D model

3D模型

质量与可靠性

产品型号 Marketing Status 等级规格 符合RoHS级别 材料声明**
JANSR2ST3360KT
NRND
Flat-8 工业 N/A

JANSR2ST3360KT

Package:

Flat-8

Material Declaration**:

Marketing Status

NRND

Package

Flat-8

Grade

Industrial

RoHS Compliance Grade

N/A

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

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产品型号
供货状态
Budgetary Price (US$)*/Qty
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包装类型
RoHS
Country of Origin
ECCN (US)
ECCN (EU)
Package: Product Marking
SMD PIN/Detailed Spec
Quality Level
Lead Finish
JANSR2ST3360KT
Available at distributors

经销商的可用性 JANSR2ST3360KT

代理商名称
地区 库存 最小订购量 第三方链接

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JANSR2ST3360KT NRND

Budgetary Price (US$)*/Qty:
-
包:
包装类型:
RoHS:
Country of Origin:
ECCN (US):
ECCN (EU):

产品型号:

JANSR2ST3360KT

Package: Product Marking:

JANSRM19500/773-01

SMD PIN/Detailed Spec:

M19500/773

Quality Level:

JANS

Lead Finish:

Solder dip

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商