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高温可控硅整流器(SCR)因其功率损耗小,使得在150°C时的功率密度更高。因此,所有浪涌电流限制器、转换器和SSR中的电路将能得到更多电流,或者散热将相应减少。瞬态抗扰度可以达到最大,而栅极的触发电流可以保持低位。这种协调的难度非常大,因此只有意法半导体的最佳技术才能做到。 

再加上创新型表面贴装式D3PAK封装,这使得电动汽车电池充电器、工业电源充电站、摩托车稳压器、电机驱动应用、以及不间断电源(UPS)转换器在功率密度方面又迈进了一步。汽车级1200 V可控硅不断扩大的应用范围对相关领域是一种额外利好;该质量基准适用于所有可控硅生产线。 

新型TN3015H-6 SCR系列具有1000 V /µs噪声抗扰性,有三种封装可选,专为小体积和节能型模块而量身定制。

意法半导体的高Tj SCR提供SMD、通孔隔离和非隔离封装,其特点是:

  • 栅极触发电流非常低(仅限600 V SCR)
  • 峰值截止状态电压(闭锁电压)从600 V到1200 V
  • 最大导通状态电流从12 A到80 A
  • 最高结温为150°C

20 A and 50 A on-state RMS current-rated SCRs with enhanced immunity and 150°C Tj max

ST's new series of 20 A, 30 A and 50 A silicon controlled rectifiers (SCRs) adds to our existing range of high-temperature thyristors:

  • The new TN2010H series of SCRs has a narrower spread gate-triggering current – 5 mA typ. and 10 mA max. – than previous generations, while delivering high electrical noise immunity and further improving the reliability of the end products.
  • The new TN3015H series of SCRs featuring 1000 V/µs high-noise-immunity provides high compactness power modules designers with an high margin on performances and reliability. The 15 mA gate current makes it easily driveable by microcontrollers. It is available in a TO-220, TO-220AB Ins. and D2PAK package outline. 
  • The new TN5015H series of SCRs includes the largest SCR fitted in a TO-220 package outline. This performs as an excellent crowbar circuit due to its large die size and surge on-state current (ITSM). The 15 mA gate current makes it easily driveable by microcontrollers.

Designed for low profile and reduced power consumption modules, these are ideal for solid-state relays, SMPS or battery chargers.
Get started with STEVAL-SCR001V1 –  ST's inrush current limiter solution board – embedding our bypass thyristor !

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