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RF Front-end

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The RF integrated passive device (RF IPD) uses a high-resistivity substrate to integrate quality factor components such as capacitors and indictors. Many functions like impedance matching networks, harmonic filters, couplers, baluns, and power combiners/splitters can be designed using IPD technology. ST's IPDs are manufactured using thick film and HiRes Si or glass wafer manufacturing technology and photolithography processing.

Integrated passive device (IPD)

ST's IPD process can integrate high-quality passive elements (resistors, inductors, and capacitors) on glass and high resistivity silicon substrates in various design configurations.

Advanced design system (ADS)

ADS covers a broad spectrum and power needs of new wireless applications.

The complete ADS suite includes layouts and effective EM simulation support. Partners can now take advantage of STMicroelectronics superior IPD process and design tools offered by ST's RF IPD foundry service.

High quality-factor RF integrated passive process

ST's high quality-factor RF integrated passive process is ideal for passive devices like matching networks, filters, matched baluns, couplers, power combiners, multiplexers, and hybrid networks.

They are used in different types of RF applications with cost sensitivity and high efficiency requirements.


Matched balun

Balun design

Baluns help balance unbalanced signals. They use ST's RF IPD process to integrate high-quality passive RF components in a single glass substrate. In addition to symmetric/asymmetric transformations, matching networks can also be integrated into footprints less than 1 mm2 for full functionality.

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RF filters

Filter design

RF Filters are used for functions like band-pass filters and low-pass or high-pass filters in RF front ends. RF filters can easily be integrated into front-end modules thanks to ST's thin-film RF IPD process for integrating high-quality passive RF components into a single glass or high-resistivity silicon substrate.

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Our IPD technology covers all RF applications with a frequency range from 168MHz and above, such as:

sub-giga products Ultra Wideband Zigbee Products Bluetooth Low Energy network co-processors wifi logo wimax logo 4G logo 5G logo

Key benefits of ST RF front-end:

  • superior process control over discrete solutions
  • competitive cost structure (lower cost than GaAs and discrete solutions)
  • small form factor:
    • smaller area than discrete solutions
    • thinner than LTCC
  • reduced power losses
  • comprehensive design kit
  • efficient design services
  • fast foundry shuttle service
ST's IPDs

ST's IPDs available as standalone products such as baluns and filters as well as foundry services. They are compatible with different assembly modes, including CSP, microbumping, and wire bonding, for mounting on the main printed wiring board (PWB) or in a complete RF module.

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