250 V super-junction MDmesh M9 Power MOSFETs
High efficiency and reliability for low-voltage DC power conversion
High efficiency and power density with proven reliability
High efficiency and power density with proven reliability
The MDmesh M9 family now extends to 250 V, bringing low conduction losses, optimised gate charge and a robust safe operating area to synchronous rectification stages and DC power conversion in 36–80 V bus systems.
The first two devices, STP25N018M9 (TO-220) and STB25N018M9 (D²PAK), achieve 15 mΩ typical RDS(on) and deliver an exceptional balance of switching performance and voltage margin for demanding DC power conversion applications.
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Energy storage
Uninterruptible power supply
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Three pillars of design advantage
- Low typical RDS(on) and optimized gate charge
- Lower losses and reduced heat generation
- Stable parameters even at high operating temperatures.
- Wide Safe Operating Area (SOA) reduces failure risks.
Two devices to accelerate your next design
STP25N018M9 in a TO‑220 package
N-channel 250 V, MDmesh M9 Power MOSFET ideal for evaluation, lab work and designs needing through‑hole assembly
*Available from Q3 2026
STB25N018M9 in a D²PAK package
N-channel 250 V, MDmesh M9 Power MOSFET Surface‑mount option for compact, high‑density layouts
On-demand webinar
How to achieve higher power levels with improved thermal performance for more efficient, compact systems.