A step forward in hard and soft switching and improved system ruggedness with fast intrinsic diode
A step forward in hard and soft switching and improved system ruggedness with fast intrinsic diode
Our 600V/650V automotive-grade MDmesh DM9 power MOSFETs offer outstanding RDS(on) and Qg with low recovery charge and time. With excellent static and dynamic performance, these devices reduce both turn-off and turn-on switching power losses, resulting in high-efficiency bridge topologies and ZVS phase-shift converters. The portfolio will soon include top-side cooling packages for space-saving, higher efficiency, and better thermal dissipation.
The STH60N099DM9-2AG in a H2PAK-2L package is the first DM9AG device in production.
Key features
- AEC-Q101 qualified
- Low Qg and RDS(on)
- Fast recovery intrinsic diode
- Extremely high dv/dt ruggedness (120 V/ns)
- Extremely high di/dt ruggedness (1300 A/µs)
Recommended resources
ST boosts silicon power performance with automotive-grade MDmesh DM9 super-junction MOSFETs
ST boosts silicon power performance with automotive-grade MDmesh DM9 super-junction MOSFETs
Our 600V/650V automotive-grade MDmesh™ DM9 power MOSFETs deliver superior efficiency and ruggedness for on-board chargers and DC/DC converter applications in both hard- and soft-switching topologies.
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MDmesh DM9AG | Webinar
Discover the MDmesh DM9AG series architecture and new top-side cooling packages for automotive