650 V SiC MOSFET in highly compact, leadless TO-LL surface-mounted package
Targets high power density in AI servers
High power density and excellent thermal performance in more compact and reliable designs
High power density and excellent thermal performance in more compact and reliable designs
ST SiC MOSFETs in TO-LL packages combine the intrinsic features of Gen3 STPOWER SiC technology with the excellent heat and current capabilities of the TO-LL package. Together, they deliver outstanding switching performance, reliability, and thermal management, and the additional Kelvin-source lead helps designers lower switching losses even further.
SMPS for servers
Telecom infrastructure
Energy storage systems
Why choose SiC MOSFETs in TO-LL package?
- Compact, leadless package
- Large exposed drain pad
- Reduced thickness: 2.3 mm
- Additional Kelvin source pin
- Low RDS(on) over full temperature range
- High-speed switching performance
- Fast and robust intrinsic body diode
SCT040TO65G3
Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
SCT055TO65G3
Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
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