Fast and easy performance evaluation of STPOWER SiC MOSFETs
The STDES-SICGP4 reference design allows evaluation of the switching and thermal performance of power SiC MOSFETs in a HiP247-4 (four-lead) package in half-bridge topology. The MOSFETs are controlled by isolated gate drivers that are supplied by isolated DC-DC converters.
The design includes the necessary elements to implement a double pulse testing (DPT) environment and explore silicon carbide operation in buck or boost configuration. The final system requires an external inductor, a power source, a load, an auxiliary supply, and PWM signals. Board comes with an external coaxial shunt connector.