stl120n10f8 industrial low voltage mosfet

STL120N10F8 industrial-grade N-channel 100 V STPOWER STripFET F8 Power MOSFET

N-channel enhancement mode standard level 100V power MOSFET with maximum on-state resistance of 4.6mΩ  at VGS=10V and housed in a PowerFLAT 5x6 package

This industrial-grade N-channel MOSFET features the latest STPOWER STripFET F8 technology with new oxide-filled trench technology delivering very low conduction losses and low gate charge for extremely competitive switching performance.

The STL120N10F8 offers a 40% figure of merit improvement over previous generation devoices, ensuring major efficiency gains and reduced EMI in motor-control applications, power supplies and converters for telecom and computer systems, LED and low-voltage lighting, as well as consumer appliances and battery-powered devices such as power tools.

Key features

  • Best on-resistance per area offered by ST for a 100V MOSFET in PowerFLAT 5x6
  • 40% lower FOM (Figure of Merit) than previous 100V MOSFET series in terms of on-resistance per gate charge and in line with the best competition
  • Excellent switching speed through low device capacitances that minimize dynamic parameters such as gate-drain charge, boosting system efficiency

Recommended resources


PSpice library with parameterized models is available to speed up design cycles.

pdf stl120n10f8

Discover the features of 100V STPOWER STripFET F8 technology for Industrial applications.

stripfet f8 press release

STL120N10F8 N-channel 100V power MOSFETs combine extremely low gate-drain charge (QGD) and on-resistance RDS(on), giving 40% better figure of merit (FoM) than comparable devices of the preceding generation.