On-demand Webinar | Learn the latest SiC technology and application case studies
ST’s portfolio of silicon carbide devices incluses STPOWER SiC MOSFETs ranging from 650 to 1700 V with the industry’s highest junction temperature rating of 200 °C for more efficient and simplified designs, and STPOWER SiC diodes ranging from 600 to 1200 V which feature negligible switching losses and 15% lower forward voltage (VF) than standard silicon diodes.
ST has over 20 years experiences in SiC and is the leader in this market through dedicated product lines. ST SiC technology innovation (Gen 2 and next Gen 3) plus the complete industrilzation of new power packages has led to a strong product range for many power systems. In this webinar, our engineering experts will explain the latest SiC technology with application case studies.
We also recorded the live Q&A session.
Contents:
- Benefits of using SiC
- SiC Market
- Application case study
- SiC technology overview
- ST SiC product profile