Application note

EMC design guide for STM8, STM32 and legacy MCUs

4 - July 2022

Introduction

Continual demand is placed on the semiconductor industry for increased microcontroller performance and complexity, as well as cost reduction. This requires the development of microcontrollers with both high-density design technology, and higher clock frequencies. These factors have intrinsically increased the noise emission and noise sensitivity of microcontroller devices. Application developers must therefore now apply EMC "hardening” techniques in their firmware design, PCB layout, and at system level.

This application note explains the microcontroller EMC features and compliance standards to help application designers reach the optimum level of EMC performance.

General information

This document applies to the Arm®-based devices. Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.

Note: Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.

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EMC

Electromagnetic compatibility (EMC) is the capability of a system to work properly, undisturbed by the electromagnetic phenomena present in its normal environment, and not to create electrical disturbances that would interfere with other equipment.

EMS

The electromagnetic susceptibility (EMS) level of a device is the resistance to electrical disturbances and conducted electrical noise. Electrostatic discharge (ESD) and fast transient burst (FTB) tests determine the reliability level of a device operating in an undesirable electromagnetic environment.

EMI

The electromagnetic interference (EMI) is the level of conducted or radiated electrical noise sourced by the equipment. Conducted emission propagates along a cable or any interconnection line. Radiated emission propagates through free space.

Functional EMS test

Functional tests are performed to measure the robustness of microcontrollers running in an application. Based on a simple program (toggling two LEDs through I/O ports), the product is stressed by two different EMC events until a run-away condition (failure) occurs.

Functional electrostatic discharge test (F_ESD test)

This test is performed on any new microcontroller devices. Each pin is tested individually with a single positive or negative electrical discharge. This allows failures investigations inside the chip and further application recommendations to protect the concerned microcontroller sensitive pins against ESD.

High static voltage has both natural and man made origins. Some specific equipment can reproduce this phenomenon in order to test the device under real conditions. Equipment, test sequence, and standards are described below. The microcontroller F_ESD qualification test uses the standards given in Table 1 ESD standards as reference.
Table 1. ESD standards
European standardInternational standardDescription
EN 61000-4-2EC 61000-4-2Conducted ESD test
F_ESD tests uses a signal source and a power amplifier to generate a high level field into the microcontroller. The insulator is using a conical tip. This tip is placed on the device or equipment under test (DUT or EUT) and an electrostatic discharge is applied (see Figure 1 ESD test equipment).
Figure 1. ESD test equipment
Introduction Tiles Sheet.3 Layer_1 Sheet.42 Sheet.1 Sheet.2 Sheet.3 Sheet.4 Sheet.5 ESD generator ESD generator Sheet.6 ground plane ground plane Sheet.7 insulation insulation Sheet.8 mains mains Sheet.9 connections connections Sheet.10 EUT EUT 1pt unidrectional arrow Sheet.12 Sheet.13 Sheet.14 1pt unidrectional arrow.26 Sheet.16 Sheet.17 Sheet.18 1pt unidrectional arrow.27 Sheet.20 Sheet.21 Sheet.22 Sheet.23 Sheet.24 Sheet.25 Sheet.26 Sheet.27 Sheet.28 Sheet.29 Sheet.30 Sheet.31 Sheet.32 Sheet.33 Sheet.34 Sheet.35 Sheet.36 Sheet.37 1pt unidrectional arrow.5 Sheet.39 Sheet.40 Sheet.41

The equipment used to perform F_ESD test is an NSG 435 generator (TESEQ) compliant with the IEC 61000-4-2 standard. The discharges are directly applied on each pin of the MCU.

Figure 2. Typical ESD current waveform in contact-mode discharge
VBackground-1 Tiles Sheet.2 Layer_1 Sheet.2 Sheet.3 (EN 61000-4-2) (EN 61000-4-2) Sheet.4 time time Sheet.5 Sheet.6 Sheet.7 Sheet.8 Sheet.9 Sheet.10 Current Current Sheet.11 100% 100% Sheet.12 90% 90% Sheet.13 I(30ns) I(30ns) Sheet.14 I(60ns) I(60ns) Sheet.15 Sheet.16 Sheet.17 Sheet.18 Sheet.19 Sheet.20 Sheet.21 Sheet.22 Sheet.23 Sheet.24 Sheet.25 Sheet.26 Sheet.27 10% 10% Sheet.28 Sheet.29 30ns 30ns Sheet.30 60ns 60ns Sheet.31 t t Sheet.32 r r Sheet.33 =0.7 to 1.0 ns =0.7 to 1.0 ns 1pt unidrectional arrow.26 Sheet.35 Sheet.36 Sheet.37 Sheet.38 Sheet.39 1pt unidrectional arrow Sheet.41 Sheet.42 Sheet.43 Sheet.44 Sheet.45 1pt unidrectional arrow.5 Sheet.47 Sheet.48 Sheet.49 Sheet.50 Sheet.51 dotted line 1pt 2pt/2pt Sheet.53 Sheet.54 dotted line 1pt 2pt/2pt.6 Sheet.56 Sheet.57 dotted line 1pt 2pt/2pt.7 Sheet.59 Sheet.60 dotted line 1pt 2pt/2pt.9 Sheet.62 Sheet.63 dotted line 1pt 2pt/2pt.10 Sheet.65 Sheet.66 dotted line 1pt 2pt/2pt.11 Sheet.68 Sheet.69 dotted line 1pt 2pt/2pt.12 Sheet.71 Sheet.72 dotted line 1pt 2pt/2pt.28 Sheet.74 Sheet.75 1pt unidrectional arrow.30 Sheet.77 Sheet.78 Sheet.79 Sheet.80 Sheet.81 0.5pt unidrectional arrow Sheet.83 Sheet.84 Sheet.85 Sheet.86 Sheet.87 0.5pt unidrectional arrow.67 Sheet.89 Sheet.90 Sheet.91 Sheet.92 Sheet.93 Sheet.94 Sheet.95 Sheet.96
Figure 3. Simplified diagram of the ESD generator
VBackground-1 Tiles Sheet.5 Layer_1 Sheet.267 Sheet.34 Sheet.43 Sheet.46 Sheet.256 Sheet.257 ESD ESD Sheet.258 generator generator Sheet.259 Rch Rch Sheet.260 Rd Rd Sheet.261 Discharge Discharge Sheet.263 HV relay HV relay Sheet.264 Cs = 150 pF Cs = 150 pF Sheet.265 Discharge return Discharge return Sheet.266 connection connection Sheet.1 Sheet.2 Sheet.3 Sheet.4 capacitor Sheet.6 Sheet.7 Sheet.8 Sheet.9 Sheet.10 Sheet.11 Sheet.12 Sheet.13 On/Off switch Sheet.15 Sheet.16 Sheet.17 Sheet.18 Sheet.19 Sheet.20 Sheet.21 Sheet.22 Sheet.24 Sheet.23 Sheet.25 On/Off switch.26 Sheet.27 Sheet.28 Sheet.29 Sheet.30 Sheet.31 Sheet.32 Sheet.33 Sheet.35
  1. Rch= 50 MΩ, Rd = 330 Ω
Fast transient burst (FTB)

More complex than functional ESD, this test submits the device to a large quantity of emitted disturbances in a short time. It is useful for detecting infrequent and unrecoverable (class B or C) microcontroller states. FTB disturbances (see Figure 4 FTB waveform diagram ) are applied to the microcontroller power lines through a capacitive coupling network.

The microcontroller FTB test correlates with the standards given in Table 2 FTB standards.

Table 2. FTB standards
European standardInternational standardDescription
N61000-4-4EC 61000-4-4Fast transient burst
Figure 4. FTB waveform diagram
VBackground-1 Tiles Sheet.5 Layer_1 Sheet.420 Sheet.12 Sheet.151 Sheet.4 Sheet.150 Sheet.27 Sheet.29 Sheet.31 Sheet.34 Sheet.38 Sheet.45 Sheet.49 Sheet.51 Sheet.52 Sheet.53 Sheet.84 Sheet.90 Sheet.153 Sheet.181 Sheet.186 Sheet.188 Sheet.201 Sheet.229 Sheet.230 Sheet.231 Sheet.232 Sheet.233 Sheet.234 Sheet.235 Sheet.236 Sheet.237 Sheet.238 Sheet.239 Sheet.240 Sheet.241 Sheet.242 Sheet.243 Sheet.244 Sheet.245 Sheet.246 Sheet.247 Sheet.248 Sheet.249 Sheet.250 Sheet.251 Sheet.252 Sheet.253 Sheet.254 Sheet.255 Sheet.256 Sheet.257 Sheet.258 Sheet.259 Sheet.260 Sheet.261 Sheet.262 Sheet.263 Sheet.264 Sheet.286 Sheet.287 Sheet.288 Sheet.289 Sheet.290 Sheet.291 Sheet.293 Sheet.294 Sheet.296 Sheet.297 Sheet.299 Sheet.300 Sheet.302 Sheet.303 Sheet.305 Sheet.306 Sheet.308 Sheet.309 Sheet.311 Sheet.312 Sheet.314 Sheet.315 Sheet.317 Sheet.318 Sheet.320 Sheet.321 Sheet.323 Sheet.324 Sheet.326 Sheet.327 Sheet.362 Sheet.375 Sheet.395 Sheet.398 Voltage Voltage Sheet.399 Burst Burst Sheet.400 Voltage Voltage Sheet.401 Voltage Voltage Sheet.402 Pulse Pulse Sheet.403 Burst length Burst length Sheet.404 15 ms 15 ms Sheet.405 Burst period Burst period Sheet.406 300 ms 300 ms Sheet.407 Time Time Sheet.408 Time Time Sheet.409 Time Time Sheet.410 0.9Vpk 0.9Vpk Sheet.411 Vpk Vpk Sheet.412 0.5Vpk 0.5Vpk Sheet.413 0.1Vpk 0.1Vpk Sheet.414 5 ns 5 ns Sheet.415 50 ns 50 ns Sheet.416 Repetition frequency: 5 kHz. Repetition frequency: 5 kHz. Sheet.417 Bursts repeat for at least 1 minute. Bursts repeat for at least 1 minute. Sheet.419 Rising and duration time (±30%) are referred to a 50Ω load Rising and duration time (±30%) are referred to a 50 load 1pt unidrectional arrow 1pt unidrectional arrow.2 0.5pt bidirectional arrow 0.5pt bidirectional arrow.156 0.5pt bidirectional arrow.133 0.5pt unidrectional arrow 0.5pt unidrectional arrow.135 Sheet.154 Sheet.157 Sheet.158 1pt unidrectional arrow.152 1pt unidrectional arrow.189 Sheet.6 Sheet.7 Sheet.9 Sheet.10 Sheet.5 Sheet.11 1pt unidrectional arrow.13 1pt unidrectional arrow.14 Sheet.15 Sheet.16 Sheet.17 Sheet.18 0.5pt unidrectional arrow.3

The spike frequency is 5 kHz. The generator produces bursts of spikes that last 15 ms every 300 ms (75 spikes). The fast transients are coupled to the device DUT with capacitors CC (see Figure 5 Coupling network).

Figure 5. Coupling network
VBackground-1 Tiles Sheet.5 Layer_1 Sheet.327 Sheet.314 Power supply Power supply Sheet.317 Cc Cc Sheet.318 +VDD +VDD Sheet.320 GND GND Sheet.321 NSG 2025 NSG 2025 Sheet.322 GND GND Sheet.323 Cc Cc Sheet.326 L L Sheet.219 Sheet.222 capacitor Sheet.228 Sheet.230 Sheet.231 Sheet.233 Sheet.234 Sheet.235 Sheet.237 capacitor.238 Sheet.240 Sheet.241 Sheet.242 Sheet.243 Sheet.244 Sheet.245 Sheet.246 Sheet.249 Sheet.250 Sheet.248 +VDD +VDD Sheet.3 Sheet.4 Sheet.5 Sheet.1 Sheet.2 To the device under test To the device under test

Measurements are performed on a ground plane. The generator is connected to ground plane by a short wire. The supply wires are 10 cm from the ground plane. The DUT is on the insulator 10 cm from the ground plane. The FTB voltage level is increased until the device failure.

Severity levels and class help application designers to determine which microcontrollers are suitable for their target application, based on the susceptibility level (severity level) and type of behavior (class) indicated in the datasheet.

ST severity level and behavior class

The IEC 61000-4-2 and IEC 61000-4-4 standards do not refer specifically to semiconductor components such as microcontrollers. Usually electromagnetic stress is applied on other parts of the system such as, connectors, mains, supplies. The energy level of the F_ESD and FTB test decreases before reaching the microcontroller, governed by the laws of physics. A large amount of statistical data collected by ST on the behavior of MCUs in various application environments has been used to develop a correlation chart between ST F_ESD or FTB test voltage and IEC 61000-4-2/61000-4-4 severity levels (see Table 3 ST ESD severity levels).

Table 3. ST ESD severity levels
Severity levelESD (IEC 61000-4-2) equipment standard (kV)FTB (IEC 61000-4-4) equipment standard (kV)ESD ST internal EMC test (kV)FTB ST internal EMC test (kV)
120.5≤ 0.5≤ 0.5
241≤ 1≤ 1
362≤ 1.5≤ 1.5
484≤ 2≤ 2.5
51>8>4NA> 2.5

In addition to this severity level, MCU behavior under ESD stress can be grouped into different behavior classes (see table below) according to EN 50082-2 standard.

Table 4. ST behavior classes
Class AClass BClass CClass D
No failure detectedFailure detected but self-recovery after disturbanceNeeds an external user action to recover normal functionalityNormal functionality cannot be recovered

Any microcontroller under the “acceptance limits” is rejected as a fail. The “target level” is the level used by ST to define good EMS performance.

Class B can be caused by:

  • a parasitic reset correctly managed by the firmware (preferable case)
  • deprogramming of a peripheral register or memory recovered by the application
  • a blocked status, recovered by a watchdog or other firmware implementation

Class C can be caused by:

  • deprogramming of a peripheral register or memory not recovered by the application
  • a blocked application status requiring an external user action

The table below shows ST target and acceptance limits.

Table 5. F_ESD/FTB target level and acceptance limit
-Acceptance limitTarget level
F_ESD0.5kV>1kV
FTB0.5kV>1.5kV

Between “acceptance limit” and “target level”, the device is relatively susceptible to noise. Special care during system design must be taken to avoid susceptibility issues.

The table below shows how F_ESD/FTB test results are presented in ST datasheets.

Table 6. Example of F_ESD / FTB test results
SymbolRatingsConditionsSeverity/Criteria
VF_ESDVoltage limits to be applied on any I/O pin to induce a functional disturbanceTA=+25 °C2/A, 3/B
VFTBFast transient voltage burst limits to be applied through 100 pF on VSS and VDD pins to induce a functional disturbanceTA=+25 °C3/B
1 The severity level 5 has been introduced on December 14 2015. Older products might indicate level 4 even if level 5 might be passed.

Latch-up (LU)

Static latch-up (LU) test

The latch-up is a phenomenon, which is defined as a high current consumption resulting from an overstress that triggers a parasitic thyristor structure and need a disconnection of the power supply to recover the initial state.

The overstress can be a voltage or current surge, an excessive rate of change of current or voltage, or any other abnormal condition that causes the parasitic thyristor structure to become self-sustaining.

The latch-up does not damage the device if the current through the low-impedance path is sufficiently limited in magnitude or duration.

This test conforms to the EIA/JESD 78 IC latch-up standard

True LU is self-sustaining and once triggered, the high current condition remains until the power supply voltage is removed from the device. A temporary LU condition is considered to have been induced if the high current condition stops when only the trigger voltage is removed.

Two complementary static tests are required on 10 parts to assess the latch-up performance:
  • Power supply overvoltage (applied to each power supply pin) simulates a user induced situation where a transient over-voltage is applied on the power supply.
  • Current injection (applied to each input, output, and configurable I/O pin) simulates an application induced situation where the applied voltage to a pin is greater than the maximum rated conditions, such as severe overshoot above VDD or undershoot below ground on an input due to ringing
The table below shows how LU test result is presented in ST datasheets.
Table 7. Example of the LU test result on STM32L062K8
SymbolParameterConditionsClass1
LUStatic latch-up classTA=+125°C conforming to JESD78AII level A
Dynamic latch-up (DLU) test

The product is evaluated for its LU susceptibility to ESD discharges when the microcontroller is “running.”

Increasing electrostatic discharges are supplied to every pin of the component until a latch-up occurs. The result is the maximum tolerated voltage without latch-up.

DLU test methodology and characterization: Electrostatic discharges (one positive then one negative test) are applied to each pin of three samples when the microcontroller is running to assess the latch-up performance in dynamic mode. Power supplies are set to the typical values. The oscillator is connected as near as possible to the pins of the microcontroller and the component is put in reset mode.

LU/DLU test equipment is same as the one used for the functional EMS (see Figure 1 ESD test equipment).

1 Class description: “A” class is an internal specification. All its limits are higher than the JEDEC specifications, that means when a device belongs to class A it exceeds the JEDEC standard. “B”class strictly covers all the JEDEC criteria (international standard).

Absolute electrical sensitivity

This test is performed to assess the components immunity against destruction caused by ESD. Any device that fails this electrical test program is classified as a failure.

Using automatic ESD tester, electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends of the number of supply pins of the device (3parts*(n+1), where n = supply pins).

Two models are usually simulated: human body model (HBM) and the charge device model (CDM). All parts are re-tested on the production tester to verify the static and dynamic parameters still comply with the device datasheet (see Figure 6 Absolute electrical sensitivity test models).

For both models, parts are not powered during the ESD stress. This test conforms to the JESD22-A114A/A115A standard. See Figure 6 Absolute electrical sensitivity test models and the following test sequences.

Figure 6. Absolute electrical sensitivity test models
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Human body model test sequence
The HBM ESD pulse simulates the direct transfer of electrostatic charge, from the human body, to a test device. A 100 pF capacitor is discharged through a switching component and a 1.5 KΩ series resistor. This is currently the most requested industry model, for classifying device sensitivity to ESD.
  • CL is loaded through S1 by the HV pulse generator.
  • S1 switches position from generator to R.
  • A discharge from CL through R (body resistance) to the microcontroller occurs.
  • S2 must be closed 10 to 100 ms after the pulse delivery period to ensure the microcontroller is not left in charge state. S2 must be opened at least 10ms prior to the delivery of the next pulse.
Charge device model (CDM)
Refer to the application note Electrostatic discharge sensitivity measurement (AN1181) for a detailed description of CDM.

Since 2018 the MCU are characterised for CDM ESD sensitivity following a standard JEDEC ANSI/ESDA/JEDEC JS-002-2014 which is replacing ANSI/ESD STM5.3.1 standard, see Table 9 Classification according to ANSI/EDSA/JEDEC JS-002 for comparison of the device classification levels.

Classification according to ANSI-ESD STM5.3.1
Table 8. CDM ESDS component classification levels
ClassVoltage range (V)
C1< 125
C2125 to < 250
C3250 to < 500
C4500 to < 1000
C51000 to < 1500
C61500 to < 2000
C7≥ 2000
Table 9. Classification according to ANSI/EDSA/JEDEC JS-002
Classification levelClassification test condition (V)
C0a< 125
C0b125 to < 250
C1250 to < 500
C2a500 to < 750
C2b750 to < 1000
C3≥ 1000

EMI radiated test

This test correlates with the IEC 61967-2 standard. It gives a good evaluation of the contribution of the microcontroller to radiated noise in an application environment. It takes into account the MCU chip as well as the package, which has a major influence on the noise radiated by the device.

In general, the smaller the package belonging to a given package family, the lower the noise generated.

The below lists the package EMI contribution from the highest to the lowest:
  • SOP
  • QFP
  • TQFP
  • FBGA
  • CSP
The test is performed in a transverse electromagnetic mode cell (TEMCELL or GTEM) which allows radiated noise measurement in two directions, rotating the test board by 90 °.
Note: Since December 14, 2015, the upper limit of the emission measurement frequency range has been extended from 1 GHz to 2 GHz with different settings. The reasons and modalities of these changes are described in EMI classification before December 14 2015, as well as the classification method to use for 100 kHz-1 GHz measurement data.
Test description

The firmware running is based on a simple application, toggling two LEDs through the I/O ports.

The main directives of IEC61967 standard related to test hardware are the following (see Figure 8 Test printed circuit board specification according IEC 61967-2 standard):
  • 100 x 100 mm square board.
  • At least 2-layer board (ideally 4-layer)
  • 5 mm conductive edges on both sides connected to ground for contact with TEMCELL
The figure below shows a typical example of an MCU EMC test board schematics.
Figure 7. Example of test board schematics for STM32
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Figure 8. Test printed circuit board specification according IEC 61967-2 standard
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Spectrum analyzer settings

The IEC61967-1 standard describes the spectrum analyzer hardware and software settings. In spite of these directives, the resolution bandwidth must be chosen according to the measured signal type: narrowband or broadband.

The table below defines the resolution bandwidth (RBW) versus the emission measurement frequency range.

Table 10. Spectrum analyzer resolution bandwidth versus frequency range (broadband EMI)
Frequency range (MHz)Resolution bandwidth (RBW)Detector
0.1 - 110 kHzPeak
1 - 1010 kHz
10 - 10010 kHz
100 - 1000100 kHz
1000 - 20001 MHz

EMI level classification

The EMI classifications are based on IEC61967-2 international standard–Annex D-3 (see Figure 9 IEC61967-2 classification chart).

The characterization level diagram described by this standard provides a synthesis and a classification of the EMI spectrum. It uses the patterns defined by a combination of one or two letters for horizontal lines and one number for diagonal line. From these patterns, four typical patterns have been selected for ST internal classification (see Figure 10 ST internal EMI level classification) to estimate the EMI risk for each microcontroller. This selection considers the resolution bandwidth of used spectrum analyzer as well as resonances caused by the geometry of the test board and setup of the test bench.

When the overstepping of a particular limit is not significant, and the corresponding peak values of the interference lie approximately in the middle between two patterns, then half-levels might be used as well.

Figure 9. IEC61967-2 classification chart
Layer_1 Sheet.11 Sheet.12
Figure 10. ST internal EMI level classification
Layer_1 Sheet.11 path42 text1369 text1405 text1441 text1477 text1343-6 0 0 text1343-3 12 12 text1343-4 18 18 text1343-0 30 30 text1343-9 42 42 text1637 dBµV dBµV text1343-40 0.1 0.1 text1343-40-8 1 1 text1343-40-8-0 10 10 text1343-40-8-8 70 70 text1343-40-8-9 100 100 text1343-40-8-5 500 500 text1343-40-8-99 1000 1000 text1343-40-8-7 2000 2000 text1343-40-8-7-7 MHz MHz path3890 path3890-3 path3890-3-5 path3890-3-6 path955.40 path955-7 path955-4 path955-0 path999 path1001 text1343-3-8 6 6 path999-9 path955-6-1 path1098 path999-9-9 path955-6-1-3 path1098-6 text1343-6-1 Level 1 (N12) Level 1 (N12) text1343-6-1-9 Level 2 (M11) Level 2 (M11) text1343-6-1-9-3 Level 3 (K9O) Level 3 (K9O) text1343-6-1-9-3-2 Level 4 (H7M) Level 4 (H7M) text1343-3-8-1 −6 −6 path955-6-1-2 path986 path1003 path955
Note: Compliance with level 2 and level 2.5 regardless of peaks above 1 GHz.

Compliance with level 1 and level 1.5 regardless of peaks above 500 MHz.

Based on ST experience, the potential risk associated to each EMI level has been defined:
  • Above level 4: high risk due to EMI level
  • In the range of levels 3–4: may require cost for EMI compliance
  • In the range of levels 2–3: moderate EMI risk
  • In the range of levels 1–2: minimal EMI risk
  • Below level 1: very low EMI risk
The table below shows how EMI test results are presented in the datasheets.
Table 11. Example of EMI results on STM32
SymbolParameterConditionsMonitored frequency bandValueUnit
SEMIPeakVDD = 3.6 V, TA = 25 °C, LQFP64 package compliant with IEC 61967-20.1 MHz to 30 MHz7dBμV
30 MHz to 130 MHz-1
130 MHz to 1 GHz8
1 GHz to 2 GHz7
Level0.1 MHz to 2 GHz2.5-

MCU design strategy and EMC specific feature

During the initial specification phase of a new product, EMC dedicated features are implemented after an identification of EMC constraints. It is the MCU target applications that impose these constraints. Refer to the specific product datasheet to know which of these features described in the figure below are embedded.

Figure 11. Overview of specific features embedded in microcontrollers
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Brownout reset (BOR)

The purpose of the BOR is to ensure that the microcontroller always work in its safe operating area (see Figure 13 Using the PVD to monitor V DD). In terms of EMS, the presence of the BOR makes the MCU more robust. It also ensures that if any outside disturbance affects the power supply, the application can recover safely.

When VDD is below the minimum working VDD, the behavior of the microcontroller is no longer guaranteed. There is not enough power to decode/execute the instructions and/or read the memory. When VDD is below the BOR level, the microcontroller enters in reset state (internal reset high) in order to prevent unpredictable behavior.

There are several levels with hysteresis in order to avoid oscillating when the micro restarts. When a BOR occurs, the hardware set a bit. This bit is used to recover an application.

The brownout reset function generates a static reset when the VDD supply voltage is below a VIT- reference value. This means that it secures the power-up as well as the power-down, keeping the microcontroller in reset (see Figure 12 Brownout reset versus reset).

The VIT- reference value for a voltage drop is lower than the VIT+ reference value for power-on to avoid a parasitic reset. This is the case when the MCU starts running and sinks current on the supply (hysteresis).

The BOR circuitry generates a reset when VDD is below:
  • VIT+ when VDD is rising
  • VIT- when VDD is falling

    The BOR function is illustrated in Figure 12 Brownout reset versus reset . The voltage threshold can be configured by option byte to be low, medium, or high.

    The MCU can only be in two modes if the minimum VDD value (guaranteed for the oscillator frequency) is above VIT-:

  • under full software control
  • in static safe reset

    In these conditions, a secure operation is always ensured for the application without the need for external hardware reset.

During a brownout reset, the NRST pin is held low, thus permitting the MCU to reset other devices.
Note: The BOR allows the device to be used without any external reset circuitry.

The BOR is an optional function that can be selected by option byte. Refer to product specification.

Figure 12. Brownout reset versus reset
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Programmable voltage detector (PVD)

This feature like the BOR improves EMS performance. It ensures that the microcontroller behaves safely when the power supply is disturbed by external noise.

The PVD has also different levels (around 200 mV above BOR levels), it enables an early warning before the reset caused by the BOR. When PVD threshold is crossed, an interrupt is generated, requesting for example some user action or preparing the application to shut down in the interrupt routine until the power supply returns to the correct level for the device (refer to the product datasheet).

Example

If fCPU is between 8 MHZ and 16 MHZ the minimum working level is 3.5 V. The Voltage detector function (PVD) is based on an analog comparison between a VIT- and VIT+ reference value and the VDD main supply. The VIT- reference value for falling voltage is lower than the VIT+ reference value for rising voltage in order to avoid parasitic detection (hysteresis).

The output of the PVD comparator is directly readable by the application software through a real time status bit (PVDO). This bit is read only.

The PVD voltage threshold value is relative to the selected BOR threshold configured by option byte (refer to the corresponding product datasheet).

If the PVD interrupt is enabled, an interrupt is generated when the voltage crosses the VIT+(PVD) or VIT-(PVD) threshold (PVDO bit toggles).

In the case of a drop in voltage, the PVD interrupt acts as an early warning that allows the software to shut down safely before the BOR resets the microcontroller. (see Figure 13 Using the PVD to monitor V DD). The interrupt on the rising edge is used to inform the application that the VDD warning state is over.

If the voltage rise time trv is less than 256 or 4096 CPU cycles (depending on the reset delay of the microcontroller), no PVD interrupt is generated when VIT+(PVD) is reached.

If trv is greater than 256 or 4096 cycles then:
  • If the PVD interrupt is enabled before the VIT+(PVD) threshold is reached, then two PVD interrupts are received, the first when the PVDE bit is set, and the second when the threshold is reached.
  • If the PVD interrupt is enabled after the VIT+(PVD) threshold is reached then only one PVD interrupt occurs.
Figure 13. Using the PVD to monitor VDD
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I/O features and properties

Integrated circuit datasheets provide the user with conservative limits and conditions to prevent damage. However, it is useful for the hardware system designer to know the internal failure mechanisms. Ultimately the risk of exposure to illegal voltages and conditions can be reduced.

It is not possible to classify and to predict all the possible damage resulting from violating maximum ratings and conditions. This is due to the large number of variables that come into play in defining the failures. This means that when an overvoltage condition is applied, the effects on the device can vary significantly. Consequently, it depends on lot-to-lot process variations, operating temperature, external interfacing of the microcontroller with other devices.

In the following sections, background technical information is given to help system designers to reduce the risk of damage to the microcontroller device.

Electrostatic discharge and latch-up

CMOS integrated circuits are generally sensitive to exposure to high-voltage static electricity, which can induce permanent damage to the device. A typical failure is the breakdown of thin oxides, which causes high-leakage current and sometimes shorts.

The latch-up is another typical phenomenon occurring in integrated circuits: unwanted turning on of parasitic bipolar structures, or silicon-controlled rectifiers (SCR), may overheat and rapidly destroy the device. These unintentional structures are composed of P and N regions, which work as emitters, bases, and collectors of parasitic bipolar transistors: the bulk resistance of the silicon in the wells and substrate act as resistors on the SCR structure. The SCR may be turned on when voltages below VSS or above VDD, are applied. It may be turned off as well when the level of current is able to generate a voltage drop across the SCR parasitic resistor. To turn off the SCR, it is necessary to remove the power supply from the device. The microcontroller design implements layout and process solutions to decrease the effects of electrostatic discharges (ESD) and latch-up. It is not possible to test all devices, due to the destructive nature of the mechanism. To guarantee product reliability, destructive tests are carried out on groups of devices. This is performed according to internal quality assurance standards and recommendations (see Latch-up (LU)).

Protective interface

Microcontroller input/output circuitry has been designed to take ESD and latch-up problems into account. However, for applications and systems where microcontroller pins are exposed to illegal voltages and high-current injections, it is strongly recommended to implement hardware solutions. This reduces the risk of damage, in that case, low-pass filters, and clamp diodes are usually sufficient in preventing stress conditions.

The risk of out-of-range voltages and currents is greater for signals coming from outside the system. Noise effect or uncontrolled spikes may occur with higher probability than for the internal signals. It is worth to notice that in some cases, adoption of filters or other dedicated interface circuitries might affect the global microcontroller performance. This induces undesired timing delays, and impacts the global system speed.
Figure 14. Digital input/output - push-pull
Layer_1 Sheet.11 Sheet.12
Internal circuitry: digital I/O pin

Figure 14 Digital input/output - push-pull shows a schematic representation of a microcontroller pin able to operate either as an input or as an output. The circuitry implements a standard input buffer and a push-pull configuration for the output buffer. It is possible to disable the output buffer when the input section is used. The MOS transistors of the buffer itself can still affect the behavior of the pin when exposed to illegal conditions. In fact, the P-channel transistor of the output buffer implements a direct diode to VDD (P-diffusion of the drain connected to the pin and N-well connected to VDD). Meanwhile, the N-channel of the output buffer implements a diode to VSS. That is, P-substrate connected to VSS and N-diffusion of the drain connected to the pin. In parallel to these diodes, dedicated circuitry is implemented to protect the logic from ESD events. These are MOS, diodes, and input series resistor.

The most important characteristic of these extra devices is that they must not disturb normal operating modes. This applies while acting during exposure to over-limit conditions. This avoids permanent damage to the logic circuitry.

Some I/O pins can be programmed to work also as open-drain outputs. This is performed through simply writing in the corresponding register of the I/O port. This depends on the MCU used. The gate of the P-channel of the output buffer is disabled. It is important to highlight that physically the P-channel transistor is still present, so the diode to VDD works. In some applications, it occurs that the voltage applied to the pin is higher than the VDD value. This supposes that the external line is kept high, while the microcontroller power supply is turned off. This condition injects current through the diode, risking permanent damages to the device.

Internal circuitry: analog input pin

Figure 15 Digital input/output - push-pull output - analog multiplexer input shows the internal circuitry used for the analog input. It is primarily a digital I/O with an added analog multiplexer for the selection of the input channel of the ADC (analog to digital converter).

The presence of the multiplexer P-channel and N-channel can affect the behavior of the pin when exposed to illegal voltage conditions. These transistors are controlled by a low noise logic, biased through AVDD and AVSS including P-channel N-well. It is important to verify always the input voltage value. The input value is with respect to both analog power supply and digital power supply. This step avoids unintentional current injections, which (if not limited) may destroy the device.

Figure 15. Digital input/output - push-pull output - analog multiplexer input
Layer_1 Sheet.1 Sheet.2

Internal PLL

Some microcontrollers have an embedded programmable PLL clock generator that allows the usage of standard 3 MHz to 25 MHz crystals. This allows a large range of internal frequencies (up to a few hundred MHz) to be obtained. By these means, the microcontroller can operate with cheaper, medium frequency crystals, while still providing a high frequency internal clock for maximum system performance. The high-clock frequency source is contained inside the chip and does not go through the PCB (printed circuit board) tracks and external components. This reduces the potential noise emission of the application.

The use of the PLL network also filters the CPU clock against external sporadic disturbances (glitches).

Clock sources

Low-powered oscillator
The oscillator is a major source of noise. To reduce this noise emission, the current that drives the oscillator is limited. The main clock of some microcontrollers is generated by four different source types coming from the multioscillator block (MO). This allows the designer to select easily the best trade-off in terms of cost, performance, and noise emission. The clock sources are listed below from the most to the least noisy:
  • an external source
  • crystal or ceramic resonator oscillators
  • an internal high frequency RC oscillator

Each oscillator is optimized for a given frequency range in terms of consumption. It is selectable through the option byte. The associated hardware configurations are shown in Figure 16 STM32 clock sources - hardware configuration. Refer to the datasheet's electrical characteristics section for more details in each case.

External clock source
In external clock mode, a clock signal (square, sinus, or triangle) with ~50% duty cycle has to drive the OSC_IN or OSC32_OUTpins while the OSC_OUT respect to the OSC32_OUTpin is tied:
  • to ground
  • left unconnected
  • or used as standard GPIO

See product reference manual for recommended configuration.

Crystal/ceramic oscillators

This family of oscillators produces a very accurate rate on the main clock of the microcontroller. The selection within a list of five oscillators with different frequency ranges is done with the option byte. This allows a reduction of consumption (refer to the microcontroller datasheet for more details on the frequency ranges). In this mode of the multioscillator, the resonator and the load capacitors have to be placed as close as possible to the oscillator pins in order to minimize output distortion and startup stabilization time. The loading capacitance values must be adjusted according to the selected oscillator.

These oscillators are not stopped during the RESET phase to avoid the delay needed for the oscillator startup.

Internal RC oscillator
The internal RC oscillator is the most cost effective solution, with the drawback of lower frequency accuracy. Its frequency is in the low single digit MHz range. In this mode, the two oscillator pins are used as standard GPIO. They are left unconnected or tied to ground, see product documentation for more details. Process variations also bring some differences from lots to lots (20 to 60%). Some microcontrollers (refer to product specification) embed a process compensation. This feature is called “trimmable internal RC”. A procedure during the test operation analyzes the process variation and calibrate the internal oscillator accordingly. This brings the internal RC accuracy to 1%. The user can also perform this procedure.
Figure 16. STM32 clock sources - hardware configuration
Layer_1 Sheet.1 capacitor Sheet.3 Sheet.4 Sheet.5 Sheet.6 Sheet.7 Sheet.8 Sheet.9 Sheet.10 Sheet.11 Sheet.12 Sheet.13 Sheet.14 Sheet.15 Sheet.16 Sheet.17 Sheet.18 Sheet.19 Sheet.20 Sheet.21 Sheet.22 OSC32_IN OSC32_IN Sheet.23 OSC32_OUT OSC32_OUT earth/ ground Sheet.25 Sheet.26 Sheet.27 Sheet.28 Sheet.29 Sheet.30 Sheet.31 Sheet.32 Sheet.33 Sheet.34 Sheet.35 Sheet.36 Sheet.37 Sheet.38 REX REX Sheet.39 CEX CEX Sheet.40 Sheet.41 Sheet.42 Sheet.43 Sheet.44 OSC32_IN OSC32_IN Sheet.45 OSC32_OUT OSC32_OUT earth/ ground Sheet.47 Sheet.48 Sheet.49 Sheet.50 Sheet.51 Sheet.52 Sheet.53 Sheet.54 Sheet.55 Sheet.56 OSC32_IN OSC32_IN Sheet.57 OSC32_OUT OSC32_OUT Sheet.58 External source Externalsource 0.5pt unidrectional arrow Sheet.60 Sheet.61 Sheet.62 earth/ ground Sheet.64 Sheet.65 Sheet.66 Sheet.67 Sheet.68 earth/ ground.31 Sheet.70 Sheet.71 Sheet.72 Sheet.73 Sheet.74 Sheet.75 Sheet.76 Sheet.77 Sheet.78 OSC_IN OSC_IN Sheet.79 OSC_OUT OSC_OUT piezoelectric sensor Sheet.81 Sheet.82 Sheet.83 Sheet.84 Sheet.85 Test point Sheet.87 Sheet.88 Sheet.89 Test point.33 Sheet.91 Sheet.92 Sheet.93 Sheet.94 dc supply (2).37 Sheet.96 Sheet.97 Sheet.98 Sheet.99 dc supply (2).40 Sheet.101 Sheet.102 Sheet.103 Sheet.104 Sheet.105 Sheet.106 Sheet.107 CL1 CL1 Sheet.108 CL2 CL2 Sheet.109 Load capacitors Loadcapacitors Sheet.110 Sheet.111 Sheet.112 dc supply (2).37 Sheet.114 Sheet.115 Sheet.116 Sheet.117 dc supply (2).40 Sheet.119 Sheet.120 Sheet.121 Sheet.122 earth/ ground.11 Sheet.124 Sheet.125 Sheet.126 Sheet.127 Sheet.128 External clock External clock Sheet.129 External RC oscillator External RC oscillator Sheet.130 Internal RC oscillator Internal RC oscillator Sheet.132 Internal RC oscillator Internal RC oscillator

The multioscillator system is designed for flexibility and to allow the system designer to find the best compromise between emission, accuracy, and cost criteria.

Internal voltage regulators (for MCUs with low-power core)

An internal voltage regulator is used to power some microcontrollers cores starting from the external power supply.

The voltage regulator reduces EMI due to the MCU core with two effects:
  • lower CPU supply voltage
  • isolate CPU supply from external MCU supplies

    For more information on how to use the oscillator, refer to the application note Oscillator design guide for STM8S, STM8A and STM32 microcontrollers (AN2867).

Output I/O current limitation and edge timing control

Output buffers are embedded in microcontrollers. Their switching speed is controlled in order to avoid parasitic oscillations when they are switched. The MCU design makes a trade-off between noise and speed.

Hardware

The major noise receptors and generators are the tracks and wiring on the printed circuit board (PCB), especially those near the MCU. The first actions to prevent noise problems thus concern the PCB layout and the design of the power supply.

In general, the smaller the number of components surrounding the MCU, the better the immunity versus noise. A ROMless solution, for instance, is typically more sensitive to and a bigger generator of noise than an embedded memory circuit.

Optimized PCB layout

Noise is basically received and transmitted through tracks and components which, once excited, act as antennas. Each loop and track includes parasitic inductance and capacitance. This radiate and absorb energy once submitted to a variation of current, voltage, or electromagnetic flux.

An MCU chip itself presents high immunity to and low generation of EMI since its dimensions are small versus the wave lengths of EMI signals (typically mm versus 10's of cm for EMI signals in the GHz range). Therefore, a single chip solution with small loops and short wires reduces noise problems.

The initial action at the PCB level is to reduce the number of possible antennas. The loops and wires connected to the MCU such as supply, oscillator and I/O must be considered with a special attention. The oscillator loop must be especially small since it operates at high frequency (see Figure 17 PCB board-oscillator layout examples).

A reduction of both the inductance and the capacitance of a track is generally difficult. The practical experience suggests that in most cases inductance is the first parameter to minimize.

Figure 17. PCB board-oscillator layout examples
Layer_1 Sheet.1

The reduction of inductance is obtained by making the lengths and surfaces of the track smaller. This is performed placing the track loops closer on the same PCB layer or on top of one another (Figure 17 PCB board-oscillator layout examples). The resulting loop area is small and the electromagnetic fields reduce one another.

The ratio in order of magnitude relating to the inductance value and the area defined by the wire loop is around 10 nH/cm2. Typical examples of low inductivity wires are coaxial, twisted pair cables or multiple layer PCBs with one ground and one supply layers. The current density in the track can also be smaller due to track enlargement or the paralleling of several small capacitances mounted in the current flow.

In critical cases, the distance between the MCU and the PCB must be minimized. This implies that the surfaces of the loops between an MCU and its environment must also be minimized. To achieve this, any socket between the MCU package and the PCB must be removed or either, a ceramic MCU package must be replaced with a plastic one using a surface mounting instead of dual in line packages.
Note: Board vias are inductances. Try to avoid them. If required, use multivias.
Figure 18. Reduction of PCB tracks loop surfaces
Layer_1 Sheet.1
Note: This test is done with a double sided PCB. Insulator thickness is 1.5 mm: copper thickness is 0.13 mm. The overall board size is 65 x 200 mm.

Power supply filtering

The power supply is used by all parts of the circuit, therefore it must be considered with special attention. The supply loops must be decoupled to make sure that signal levels and power currents do not interfere. These loops can be separated using star wiring with one node designated as common for the circuit (Figure 19 Power-supply layout examples).

The decoupling capacitance must be placed very close to the MCU supply pins to minimize the resultant loop. It should be also large enough to absorb, without significant voltage increase, parasitic currents coming from the MCU via the input protection diodes. The decoupling of the board can be done with electrolytic capacitors (typically 10 µF to 100 µF) since the dielectric used in such capacitors provides a high volumic capacitance. However, these capacitors behave like inductances at high frequency (typically above10 MHz) while ceramic or plastic capacitors keep a capacitive behavior at higher frequency.

A ceramic capacitance of, for instance, 0.1 μF to 1 μF must be used as high-frequency supply decoupling for critical chips operating at high frequency.

Figure 19. Power-supply layout examples
Layer_1 Sheet.11 Sheet.12

Ground connections

It is recommended to connect all VSS pins together by the shortest possible path to reduce the risk of creating voltage difference between the VSS pins above the absolute maximum ratings stated in the device datasheet, due to the current induced by external disturbance and to reduce the impedance of ground return path.

The best practice is to connect the VSS lines to the ground plane through the vias placed as close as possible to the device VSS pins. The ground plane must be solid without slots or holes, which may cause an increase of the ground plane impedance. The split of analog and digital ground is not recommended. While it may have a questionable impact on noise distribution from the digital-to-analog domain, it shows always worse EMC performance.

I/O configuration

A digital input configuration with the pin floating is a potential hazard to the circuit. It is recommended that I/O pins not used in the application be configured in output push-pull low state. This increases EMC robustness or configure as an analog input connected to ground to reduce power current consumption.

Shielding

Shielding helps to reduce noise sensitivity and emission. However, it depends on the material chosen as a shield. It must have a high permeability or a low resistivity, and its connection must be to a stable voltage source. This includes a decoupling capacitance via a low serial impedance (low inductance or low resistance) voltage source.

If the generator of major disturbances is near to the MCU board and identified as a strong dV/dt generator (that is, a transformer or klystron), the noise is carried mainly by the electrostatic field. The critical coupling between the noise generator and the control board is capacitive. A highly conductive shield that is, copper, creating a faraday cage around the control board may strongly increase the immunity.

If the strongest source of perturbations is a dI/dt generator (that is, a relay), it is a high source of electromagnetic fields. Therefore, the permeability of the shielding material namely alloy, is crucial to increase the immunity of the board. In addition, the number and size of the holes on the shield should be reduced as much as possible to increase its efficiency.

In critical cases, the implantation of a ground plane below the MCU, and the removal of sockets between the device and the PCB can reduce the MCU noise sensitivity. Indeed, both actions lead to a reduction of the apparent surface of loops between the MCU, its supply, its I/O and the PCB.

I/O bonding coupling

In some application cases, when the ESD strike occurs on a pin PA3 then, the adjacent pins PA2 and PA4 can be affected by a voltage spike transferred to the current.

Figure 20. UFQFPN48 package example: top view
STM32G0x1 in UFQFPN48, terminal assignment Sheet.1 Sheet.2 Sheet.3 Sheet.4 Sheet.5 Sheet.6 Sheet.7 Sheet.8 Sheet.9 Sheet.10 Sheet.11 Sheet.12 Sheet.13 Sheet.14 Sheet.15 Sheet.16 Sheet.17 Sheet.18 Sheet.19 Sheet.20 Sheet.21 Sheet.22 Sheet.23 Sheet.24 Sheet.25 Sheet.26 Sheet.27 Sheet.28 Sheet.29 Sheet.30 Sheet.31 Sheet.32 Sheet.33 Sheet.34 Sheet.35 Sheet.36 Sheet.37 Sheet.38 Sheet.39 Sheet.40 Sheet.41 Sheet.42 Sheet.43 Sheet.44 Sheet.45 Sheet.46 Sheet.47 Sheet.48 Sheet.49 Exposed pad Exposed pad Sheet.51 1 1 Sheet.52 2 2 Sheet.53 3 3 Sheet.54 4 4 Sheet.55 5 5 Sheet.56 6 6 Sheet.57 7 7 Sheet.58 8 8 Sheet.59 9 9 Sheet.60 10 10 Sheet.61 11 11 Sheet.62 12 12 Sheet.63 36 36 Sheet.64 35 35 Sheet.65 34 34 Sheet.66 33 33 Sheet.67 32 32 Sheet.68 31 31 Sheet.69 30 30 Sheet.70 29 29 Sheet.71 28 28 Sheet.72 27 27 Sheet.73 26 26 Sheet.74 25 25 Sheet.75 39 39 Sheet.76 37 37 Sheet.77 40 40 Sheet.78 38 38 Sheet.79 45 45 Sheet.80 43 43 Sheet.81 41 41 Sheet.82 48 48 Sheet.83 47 47 Sheet.84 46 46 Sheet.85 44 44 Sheet.86 42 42 Sheet.87 22 22 Sheet.88 24 24 Sheet.89 21 21 Sheet.90 23 23 Sheet.91 16 16 Sheet.92 18 18 Sheet.93 20 20 Sheet.94 13 13 Sheet.95 14 14 Sheet.96 15 15 Sheet.97 17 17 Sheet.98 19 19 Curve connect 2 Sheet.100 Sheet.101 Sheet.102 Sheet.103 Sheet.104 Sheet.105 Sheet.106 VSS VSS Sheet.107 PA2 PA2 Sheet.108 PA3 PA3 Sheet.109 PA4 PA4 Sheet.110 PA5 PA5 Sheet.111 PA6 PA6 Sheet.112 PA7 PA7 Sheet.113 PB0 PB0 Sheet.114 PB1 PB1 Sheet.115 PB2 PB2 Sheet.116 PB10 PB10 Sheet.117 PB11 PB11 Sheet.118 PB12 PB12 Sheet.119 PC13 PC13 Sheet.120 PC14-OSC32_IN PC14-OSC32_IN Sheet.121 PC15-OSC32_OUT PC15-OSC32_OUT Sheet.122 VBAT VBAT Sheet.123 VREF+ VREF+ Sheet.124 VDD/VDDA VDD/VDDA Sheet.125 VSS/VSSA VSS/VSSA Sheet.126 PF2-NRST PF2-NRST Sheet.127 PF0-OSC_IN PF0-OSC_IN Sheet.128 PF1-OSC_OUT PF1-OSC_OUT Sheet.129 PA0 PA0 Sheet.130 PA1 PA1 Sheet.131 PA14-BOOT0 PA14-BOOT0 Sheet.132 PA13 PA13 Sheet.133 PA12 [PA10] PA12 [PA10] Sheet.134 PA11 [PA9] PA11 [PA9] Sheet.135 PA10 PA10 Sheet.136 PC7 PC7 Sheet.137 PC6 PC6 Sheet.138 PA9 PA9 Sheet.139 PA8 PA8 Sheet.140 PB15 PB15 Sheet.141 PB14 PB14 Sheet.142 PB13 PB13 Sheet.143 PA15 PA15 Sheet.144 PD0 PD0 Sheet.145 PD1 PD1 Sheet.146 PD2 PD2 Sheet.147 PD3 PD3 Sheet.148 PB3 PB3 Sheet.149 PB4 PB4 Sheet.150 PB5 PB5 Sheet.151 PB6 PB6 Sheet.152 PB7 PB7 Sheet.153 PB8 PB8 Sheet.154 PB9 PB9 Sheet.155 Square UFQFPN48 UFQFPN48

Due to the package technology, chip pads are connected to package pins with wire bonding and it creates a small capacitive/inductive coupling between adjacent pins.

Once the ESD strike occurs, the discharge energy does not go only through the single pin but also to the adjacent pins due to the coupling.

It could induce a transient state where the voltage variation between supplies or ground pins is higher than the absolute maximum ratings (refer to product datasheet). As a final result, the STM32 product peripherals operation may be altered.

It is important to verify that the application functionalities after the ESD strike occurs. If any issue occurs, we strongly recommend improving the ESD protection on the identified entry point pin PA3. This reduces the ESD coupled energy and ensures the good application operation.

High-speed signal tracks

Another source of EMC weaknesses with microcontroller-based applications may be due to high speed digital I/O and communication interfaces such as, xSPI, I²C, external memories interfaces, USB, or PWM from GPIO.

When designing the PCB with high-speed signals, the following EMC consideration list must be considered:

  • Coupling/crosstalk:
    • When a signal couple and interfere with another one and leads to an intrusive spike (can be sampled as data) and timing shift.
  • Signal reflection:
    • The high-speed signals are susceptible to impedance mismatching which may alter the shape of the signal.
  • Clock jitter:
    • An external interference, or noise can introduce a deviation of the clock edge, this leads to a narrower timing tolerance or communication failure.
  • Potential antennas:
    • Routing close to the edge of the PCB or a gap in plane can act as an antenna.
  • Certification fails:
    • Even if there is no functional issue, the product may fail the required certification and the PCB must be redesigned.

    To avoid these issues, planning with EMC performances in mind must be done from the earliest stages of development.

  • Stack-up:
    • One major consideration to improve EMI is to use four (or more) layers PCB with the external layers (top and bottom) being for signals and the internal for GND and power planes. The solid planes help with controlling the signal impedance on the top and bottom and together (GND and PWR planes) create stack-up capacitance that improves the performance at higher frequencies.
    • If there is a particularly noisy signal, it can be routed between two solid PWR/GND planes to reduce its emission but that require eight or more layer stack-up.
    • Avoid gaps in the solid planes, these gaps can behave as antennas.
  • Routing tips and recommendations:
    • If a high-speed signal needs to go through a vias (not recommended for high-speed signals as they are seen as impedance mismatch), then the return path loop requires to keep at minimum loop area.
    • Never route over plane gap and in case that it is unavoidable use stitching caps.
    • Avoid routing in parallel for long distance to noisy signals to avoid coupling issues.
    • For very long tracks (>30 cm) and very high-speed signals (>50 MHz) a termination resistance can be added to reduce the signal reflection (resistance range between 30 Ω ~ 50 Ω).

Handling precautions for ESD protection

To determine the susceptibility of microcontroller devices to ESD damage, refer to the application note Electrostatic discharge sensitivity measurement (AN1181).

Conclusion

For any microcontroller application, EMC requirements must be considered at the very beginning of the development project. Standards, features and parameters given in microcontroller datasheets help the system designer to determine the most suitable component for a given application. Hardware and firmware precautions must be taken to optimize EMC and system stability.

EMI classification before December 14 2015

The section gives information that complements EMI radiated test

Since December 14 2015, the upper limit of the emission measurement frequency range has been extended from 1 GHz to 2 GHz, thus increasing the resolution bandwidth (RBW). This change is due to the evolution of microcontrollers, which embed higher frequency internal clocks, sometimes above 200 MHz, with higher PLL multiplication factors. This leads to higher frequency broadband harmonics emissions.

As a result, ST internal EMI level classification patterns were updated and adjusted to the new spectrum analyzer settings.

For data related to measurements performed before December 14 2015 in the 100 kHz- 1 GHz frequency range, refer to Figure 21 ST internal EMI level classification before December 14 2015 and Table 13 Spectrum analyzer resolution bandwidth versus frequency range (narrowband EMI).

Figure 21. ST internal EMI level classification before December 14 2015
VBackground-1 Tiles Sheet.5 Layer_1 Sheet.1 Sheet.3 Sheet.4 Sheet.5 Sheet.6 Sheet.7 Sheet.8 Sheet.9 Sheet.10 Sheet.11 Sheet.12 Sheet.13 Sheet.14 Sheet.15 Sheet.16 Sheet.17 Sheet.18 Sheet.19 Sheet.20 Sheet.21 Sheet.22 Sheet.23 Sheet.24 Sheet.25 Sheet.26 Sheet.27 Sheet.28 Sheet.29 Sheet.30 Sheet.31 Sheet.32 Sheet.33 Sheet.34 Sheet.35 Sheet.36 Sheet.37 Sheet.38 Sheet.39 Sheet.40 Sheet.41 Sheet.42 Sheet.43 Sheet.44 Sheet.45 Sheet.46 Sheet.47 Sheet.48 Sheet.49 Sheet.50 dbu V dbu V Sheet.51 60 60 Sheet.52 40 40 Sheet.53 30 30 Sheet.54 20 20 Sheet.55 10 10 Sheet.56 0 0 Sheet.57 -20 -20 Sheet.58 0.1 0.1 Sheet.59 1 1 Sheet.60 10 10 Sheet.61 30 30 Sheet.62 100 100 Sheet.63 1000 1000 Sheet.64 MHz MHz Sheet.65 Sheet.66 Sheet.67 Sheet.68 Sheet.69 Sheet.70 Sheet.71 Level 4 Level 4 Sheet.72 Level 3 Level 3 Sheet.73 Level 2 Level 2 Sheet.74 Level 1 Level 1
According to ST experience, the potential risk associated with each EMI level have been defined:
  • Level higher than 4: high risk due to EMI level.
  • Level 4: may require cost for EMI compliance.
  • Level 3: moderate EMI risk.
  • Level 2: minimal EMI risk.
  • Level 1: very low EMI risk
Table 13. Spectrum analyzer resolution bandwidth versus frequency range (narrowband EMI)
Frequency range (MHz)Resolution bandwidthDetector
0.1 - 11 kHzPeak
1 - 101 kHz
10 - 1001 kHz
100 - 10009 kHz

Revision history

Table 14. Document revision history
DateVersionChanges
Sep-20231Initial release.
03-Feb-20162Changed IEC 1000 standard into IEC 61000.

Changed NSG 435 provider in Section 3.1.1: Functional EMS test. Updated Table 3: ST ESD severity levels.

Changed static latch-up example to STM32L062K8 in

Modified Table 7.

Removed Table Example of DLU test result on ST72F521 from Section 3.1.2: Latch-up (LU).

Section 3.1.3: Absolute electrical sensitivity:
  • Added the fact that parts are not powered during the ESD stress.
  • Removed machine model.
  • Added Section : Charge device model (CDM).

Updated Section 3.2: Electromagnetic interference

(EMI).

Section 4.1: Susceptibility:

  • Replaced low-voltage detector (LVD) by brownout reset (BOR).
  • Replaced RESET by NRST.
  • Removed Figure Maximum operating frequency vs supply voltage.
  • Replaced Auxiliary voltage detector (AVD) by Programmable voltage detector (PVD).
  • Removed Section Multiple VDD and VSS

    Updated Section 4.2.1: Internal PLL.

    Updated Section : Internal RC oscillator and Section

    Internal voltage regulators (for MCUs with low-power core).

    Added trays in Section 5.2: Handling precautions for ESD protection.

    Added Appendix A: EMI classification before December 14 2015.

23-Apr-20183

Updated Charge device model (CDM), replace title of Section 3.2.2: Global low-power approach by Section 4.2.2: Clock sources, External Clock source, Internal RC oscillator

Added Table 8: CDM ESDS component classification levels, Table 9: CDM ESDS device classification levels,Section 5.1.3: Ground connections

1-Jul-20224Added:

List of tables

List of figures

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