Datasheet

700 V, 270 mΩ typ., 6 A, e-mode PowerGaN transistor

2 - July 2025
DS14998_SGT350R70GTK






Product status link
SGT350R70GTK
Product summary
Order code SGT350R70GTK
Marking 350R70G
Package DPAK
Packing Tape and reel

Description

The SGT350R70GTK is a 700 V, 6 A e-mode PowerGaN transistor combined with a well-established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultrafast switching operation to enable high-power density and unbeatable efficiency performances. Recommended for consumer QR applications with zero current turn-on.

Features

Order code VDS RDS(on) max. ID Series
SGT350R70GTK 700 V 350 mΩ 6 A G-HEMT
  • Enhancement mode normally off transistor
  • Very high switching speed
  • High power management capability
  • Extremely low capacitances
  • Zero reverse recovery charge
  • ESD safeguard

Applications

  • Adapters for tablets, notebook and AIO
  • USB type-C PD adapters and quick chargers

Electrical ratings

TC = 25 °C unless otherwise specified.

Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage 7001 V
Drain-source voltage (transient, tp < 200 μs) 800
VGS Gate-source voltage -1.4 to 7 V
ID Drain current (continuous) at TC = 25 °C 62 A
IDM Pulse drain current (tp = 10 μs) 10 A
PTOT Total power dissipation at TC = 25 °C 47 W
ESD Human body model, R = 1.5 kΩ, C = 100 pF 2 kV
Tstg Storage temperature range -55 to 150 °C
TJ Operating junction temperature range °C
Table 2. Thermal data
Symbol Parameter Value Unit
RthJC

Thermal resistance, junction-to-case

 2.63 °C/W
RthJA Thermal resistance, junction-to-ambient 563 °C/W
1 Recommended continuous maximum bus voltage during switching operations should not exceed 450 V.
2 Limited by design.
3 When mounted on a standard 1 inch² area of FR-4 PCB with 2-oz copper.

Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 3. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
IDSS Drain-source leakage current VGS = 0 V, VDS = 700 V 0.6 12 μA
VGS = 0 V, VDS = 700 V, TJ = 150 °C 5
IGSS Gate-source leakage current VDS = 0 V, VGS = 6 V 30 μA
VGS(th) Gate threshold voltage VDS = VGS, ID = 6.6 mA 1.2 1.7 2.5 V
RDS(on) Static drain-source on-resistance VGS = 6 V, ID = 2.2 A 270 350 mΩ
VGS = 6 V, ID = 2.2 A, TJ = 150 °C 580
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance

VGS = 0 V, VDS = 400 V, f = 100 kHz

- 50 - pF
Coss Output capacitance - 15 - pF
Crss Reverse transfer capacitance - 0.2 - pF
Co(er)1 Equivalent output capacitance energy related VGS = 0 V, VDS = 0 to 400 V - 20 - pF
Co(tr)2 Equivalent output capacitance time related - 28 - pF
Rg Intrinsic gate resistance f = 5 MHz, ID = 0 A - 11 - Ω
Vplat Gate plateau voltage VDS = 400 V, ID = 2.2 A - 2.2 - V
Qg Total gate charge

VGS = 0 to 6 V, VDS = 400 V, ID = 2.2 A

- 1.5 - nC
Qgs Gate-source charge - 0.15 - nC
Qgd Gate-drain charge - 0.5 - nC
Qrr Reverse recovery charge VGS = 0 V, VDS = 400 V - 0 - nC
Qoss Output charge - 13 - nC
Table 5. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time

VDS = 400 V, ID = 4.4 A, VGS = 6 V,

RG(on) = 10 Ω, RG(off) = 2 Ω,

L= 318 µH

 - 0.9 - ns
tr Rise time - 3.5 - ns
td(off) Turn-off delay time - 1.2 - ns
tf Fall time - 6.1 - ns
Table 6. Reverse conduction
Symbol Parameter Test conditions Min. Typ. Max. Unit
VSD Source-drain reverse voltage VGS = 0 V, ISD = 2.2 A - 2.6 - V
1 Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to the stated value.
2 Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to the stated value.

Electrical characteristics (curves)

Figure 1. Safe operating area (TC = 25 °C)
Figure 2. Safe operating area (TC = 125 °C)
Figure 3. Maximum transient thermal impedance
Figure 4. Total power dissipation
Figure 5. Typical output characteristics (TJ = 25 °C)
Figure 6. Typical output characteristics (TJ = 125 °C)
Figure 7. Typical transfer characteristics
Figure 8. Normalized on-resistance vs temperature
Figure 9. Typical drain-source on-resistance (TJ = 25 °C)
Figure 10. Typical drain-source on-resistance (TJ = 125 °C)
Figure 11. Typical gate charge characteristics
Figure 12. Typical capacitance characteristics
Figure 13. Typical output capacitance charge
Figure 14. Typical output capacitance stored energy
Figure 15. Typical diode reverse conduction characteristics (TJ = 25 °C)
Figure 16. Typical diode reverse conduction characteristics (TJ = 125 °C)
Figure 17. Typical reverse conduction characteristics (TJ = 25 °C)
Figure 18. Typical reverse conduction characteristics (TJ = 125 °C)
Figure 19. Normalized gate threshold vs temperature

Test circuits

Figure 20. Test circuit for inductive load switching times


Figure 21. Switching time waveforms


DPAK (TO-252) type L for PowerGaN package information

Figure 22. DPAK (TO-252) type L for PowerGaN package outline
Table 7. DPAK (TO-252) type L for PowerGaN mechanical data
Dim. mm
Min. Typ. Max.
A 2.20 2.30 2.38
A1 0.00 0.12
A2 0.97 1.07 1.17
b 0.68 0.78 0.90
b3 5.20 5.33 5.46
c 0.43 0.53 0.61
D 5.98 6.10 6.22
D1 5.30 REF
E 6.40 6.60 6.73
E1 4.63
e 2.286 BSC
H 9.40 10.10 10.50
L 1.38 1.50 1.75
L1 2.90 REF
L2 0.51 BSC
L3 0.88 1.28
L4 0.50 1.00
L5 1.65 1.80 1.95
V2 0° 8°
Figure 23. DPAK (TO-252) type L for PowerGaN recommended footprint (dimensions are in mm)
Figure 24. Marking composition for DPAK (TO-252) type L for PowerGaN for PowerGaN

Engineering samples

These samples are clearly identified by “ES” digits in the marking additional information field of each unit. These samples are intended to be used for electrical compatibility evaluation only; usage for any other purpose may be agreed only upon written authorization by ST. ST is not liable for any customer usage in production and/or in reliability qualification trials.

Commercial samples

Fully qualified parts from ST standard production with no limitations of use or special identification marking.

DPAK (TO-252) type L for PowerGaN packing information

Figure 25. DPAK (TO-252) type L for PowerGaN tape drawing (dimensions are in mm)


Revision history

Table 8. Document revision history
Date Revision Changes
16-Jun-2025 1 First release.
18-Jul-2025 2 Updated Applications and Description.

List of tables

Table 1. Absolute maximum ratings

Table 2. Thermal data

Table 3. Static

Table 4. Dynamic

Table 5. Switching times

Table 6. Reverse conduction

Table 7. DPAK (TO-252) type L for PowerGaN mechanical data

Table 8. Document revision history

List of figures

Figure 1. Safe operating area (TC= 25 °C)

Figure 2. Safe operating area (TC= 125 °C)

Figure 3. Maximum transient thermal impedance

Figure 4. Total power dissipation

Figure 5. Typical output characteristics (TJ= 25 °C)

Figure 6. Typical output characteristics (TJ= 125 °C)

Figure 7. Typical transfer characteristics

Figure 8. Normalized on-resistance vs temperature

Figure 9. Typical drain-source on-resistance (TJ= 25 °C)

Figure 10. Typical drain-source on-resistance (TJ= 125 °C)

Figure 11. Typical gate charge characteristics

Figure 12. Typical capacitance characteristics

Figure 13. Typical output capacitance charge

Figure 14. Typical output capacitance stored energy

Figure 15. Typical diode reverse conduction characteristics (TJ= 25 °C)

Figure 16. Typical diode reverse conduction characteristics (TJ= 125 °C)

Figure 17. Typical reverse conduction characteristics (TJ= 25 °C)

Figure 18. Typical reverse conduction characteristics (TJ= 125 °C)

Figure 19. Normalized gate threshold vs temperature

Figure 20. Test circuit for inductive load switching times

Figure 21. Switching time waveforms

Figure 22. DPAK (TO-252) type L for PowerGaN package outline

Figure 23. DPAK (TO-252) type L for PowerGaN recommended footprint (dimensions are in mm)

Figure 24. Marking composition for DPAK (TO-252) type L for PowerGaN for PowerGaN

Figure 25. DPAK (TO-252) type L for PowerGaN tape drawing (dimensions are in mm)

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