Datasheet

N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages

13 - July 2025
DS5052_STFW3N150_STH3N150-2_STP3N150_STW3N150






Features

Order codes VDS RDS(on) max. ID PTOT
STFW3N150 1500 V 9 Ω 2.5 A 63 W
STH3N150-2 140 W
STP3N150
STW3N150
  • 100% avalanche tested
  • Intrinsic capacitances and Qg minimized
  • High speed switching

Applications

  • Switching applications

Description

These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.

Electrical ratings

Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
TO-3PF H2PAK-2 TO-220 TO-247
VDS Drain-source voltage 1500 V
VGS Gate-source voltage ±30 V
ID Drain current (continuous) at TC = 25 °C 2.51 2.5 A
Drain current (continuous) at TC = 100 °C 1.61 1.6
IDM2 Drain current (pulsed) 10 A
PTOT Total power dissipation at TC = 25 °C 63 140 W
VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) 3.5 kV
Tstg Storage temperature range -55 to 150 °C
TJ Operating junction temperature range
Table 2. Thermal data
Symbol Parameter Value Unit
TO-3PF H2PAK-2 TO-220 TO-247
RthJC Thermal resistance, junction-to-case 2 0.89 °C/W
RthJA Thermal resistance, junction-to-ambient 50 353 62.5 50 °C/W
Table 3. Avalanche characteristics
Symbol Parameter Max value Unit
IAR Avalanche current, repetitive or not-repetitive

(pulse width limited by TJ max.)

2.5 A
EAS Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAR, VDD = 50 V)

450 mJ
1 Limited by maximum junction temperature.
2 Pulse width limited by safe operating area.
3 When mounted on a standard 1 inch2 area of FR-4 PCB with 2-oz copper.

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 1500 V
IDSS Zero gate voltage drain current VGS = 0 V, VDS = 1500 V 10 µA
VGS = 0 V, VDS = 1500 V, TC = 125 °C 1 500
IGSS Gate-body leakage current VDS = 0 V, VGS = ±30 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 1.3 A 6 9 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance VDS = 25 V, f = 1 MHz, VGS = 0 V - 939 - pF
Coss Output capacitance - 102 -
Crss Reverse transfer capacitance - 13.2 -
Coss eq.2 Equivalent output capacitance VDS = 0 to 1200 V, VGS = 0 V - 100 - pF
Rg Gate input resistance

f = 1 MHz, gate DC Bias = 0,

test signal level = 20 mV, ID = 0 A

- 4 - Ω
Qg Total gate charge

VDD = 1200 V, ID = 2.5 A, VGS = 0 to 10 V

(see Figure 18 Test circuit for gate charge behavior)

- 29.3 - nC
Qgs Gate-source charge - 4.6 -
Qgd Gate-drain charge - 17 -
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time

VDD = 750 V, ID = 1.25 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 17 Test circuit for resistive load switching times and Figure 22 Switching time waveform)

- 24 - ns
tr Rise time - 47 -
td(off) Turn-off delay time - 45 -
tf Fall time - 61 -
Table 7. Source-drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 2.5 A
ISDM 3 Source-drain current (pulsed) - 10 A
VSD 4 Forward on voltage VGS = 0 V, ISD = 2.5 A - 1.6 V
trr Reverse recovery time

ISD = 2.5 A, di/dt = 100 A/µs,

VDD = 60 V

(see Figure 19 Test circuit for inductive load switching and diode recovery times)

- 410 ns
Qrr Reverse recovery charge - 2.4 µC
IRRM Reverse recovery current - 11.7 A
trr Reverse recovery time

ISD = 2.5 A, di/dt = 100 A/µs,

VDD = 60 V, TJ = 150 °C

(see Figure 19 Test circuit for inductive load switching and diode recovery times)

- 540 ns
Qrr Reverse recovery charge - 3.3 µC
IRRM Reverse recovery current - 12.3 A
1 Specified by design, not tested in production.
2 Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
3 Pulse width is limited by safe operating area.
4 Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

Electrical characteristics (curves)

Figure 1. Safe operating area for TO-3PF


Figure 2. Thermal impedance for TO-3PF


Figure 3. Safe operating area for H2PAK-2 and TO-220


Figure 4. Thermal impedance for H2PAK-2 and TO-220
Figure 5. Safe operating area for TO-247


Figure 6. Thermal impedance for TO-247


Figure 7. Output characteristics


Figure 8. Transfer characteristics


Figure 9. Normalized V(BR)DSS vs temperature


Figure 10. Static drain-source on-resistance


Figure 11. Gate charge vs gate-source voltage


Figure 12. Capacitance variations


Figure 13. Normalized gate threshold voltage vs temperature


Figure 14. Normalized on resistance vs temperature


Figure 15. Source-drain diode forward characteristics


Figure 16. Maximum avalanche energy vs TJ

Test circuits

Figure 17. Test circuit for resistive load switching times


Figure 18. Test circuit for gate charge behavior


Figure 19. Test circuit for inductive load switching and diode recovery times


Figure 20. Unclamped inductive load test circuit


Figure 21. Unclamped inductive waveform


Figure 22. Switching time waveform


TO-3PF type A package information

Figure 23. TO-3PF type A package outline


Table 8. TO-3PF type A mechanical data
Dim. mm
Min. Typ. Max.
A 5.30 5.70
C 2.80 3.20
D 3.10 3.50
D1 1.80 2.20
E 0.80 1.00
F 0.65 0.85
F2 1.80 2.20
G 10.80 11.00
G1 5.35 5.45 5.55
H 15.30 15.70
L 9.80 10.00 10.20
L2 22.80 23.20
L3 26.30 26.70
L4 43.60 44.00
L5 4.30 4.70
L6 24.30 24.70
L7 14.60 15.00
N 1.80 2.20
R 3.80 4.20
Dia 3.40 3.80

TO-3PF type B package information

Figure 24. TO-3PF type B package outline


Table 9. TO-3PF type B mechanical data
Dim. mm
Min. Typ. Max.
A 5.30 5.50 5.70
C 2.80 3.00 3.20
D 3.10 3.30 3.50
D1 1.80 2.00 2.20
E 0.80 0.95 1.10
F 0.65 0.80 0.95
F2 1.80 2.00 2.20
G 10.30 10.90 11.50
G1 5.45
H 15.30 15.50 15.70
L 9.80 10.00 10.20
L2 22.80 23.00 23.20
L3 26.30 26.50 26.70
L4 43.20 43.80 44.40
L5 4.30 4.50 4.70
L6 24.30 24.50 24.70
L7 14.60 14.80 15.00
N 1.80 2.00 2.20
R 3.80 4.00 4.20
Dia 3.40 3.60 3.80

H²PAK-2 package information

Figure 25. H²PAK-2 package outline


Table 10. H²PAK-2 package mechanical data
Dim. mm
Min. Typ. Max.
A 4.30 - 4.70
A1 0.03 0.20
C 1.17 1.37
D 8.95 9.35
e 4.98 5.18
E 0.50 0.90
F 0.78 0.85
F2 1.14 1.70
H 10.00 10.40
H1 7.40 7.80
J1 2.49 2.69
L 15.30 15.80
L1 1.27 1.40
L2 4.93 5.23
L3 6.85 7.25
L4 1.50 1.70
M 2.60 2.90
R 0.20 0.60
V 0° 8°
Figure 26. H²PAK-2 recommended footprint


Note:

Dimensions are in mm.

TO-220 type A package information

Figure 27. TO-220 type A package outline


Table 11. TO-220 type A package mechanical data
Dim. mm
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95

Slug flatness

 0.03 0.10

TO-247 package information

Figure 28. TO-247 package outline


Table 12. TO-247 package mechanical data
Dim. mm
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
ØP 3.55 3.65
ØR 4.50 5.50
S 5.30 5.50 5.70
aaa 0.04 0.10

H²PAK-2 packing information

Figure 29. H²PAK-2 tape drawing (dimensions are in mm)

Ordering information

Table 13. Order codes
Order codes Marking Package Packing
STFW3N150 3N150 TO-3PF Tube
STH3N150-2 H3N150 H2PAK-2 Tape and reel
STP3N150 P3N150 TO-220 Tube
STW3N150 3N150 TO-247

Revision history

Table 14. Document revision history
Date Revision Changes
12-Jan-2007 1 First release
17-Apr-2007 2 Added new value on Table 6.
14-May-2007 3 The document has been reformatted
29-Aug-2007 4 RDS(on) value changed, updated Figure 15
09-Apr-2008 5 Added new package: TO-3PF
13-Feb-2009 6 Added PTOT value for TO-3PF (Table 2: Absolute maximum ratings)
01-Dec-2009 7

– Document status promoted from preliminary data to datasheet

– Removed TO-220FH package and mechanical data

10-Dec-2009 8 Corrected VISO value in Table 2: Absolute maximum ratings
29-Jun-2010 9 Corrected unit in Table 3.
08-Feb-2013 10

– Minor text changes

– Modified: Table 3

– Changed: Figure 1

– Added: H2PAK-2 package

18-Feb-2014 11

– Modified: Figure 1

– Updated: Figure 18, 19, 20 and 21

– Updated: Figure 27 and Table 11

– Updated: Section 4: Package mechanical data

– Minor text changes
12-May-2020 12

Updated Section 5 Ordering information.

Minor text changes.
29-Jul-2025 13

Updated Package information.

Added TO-3PF type B package information.

Minor text changes.

List of tables

Table 1. Absolute maximum ratings

Table 2. Thermal data

Table 3. Avalanche characteristics

Table 4. Static

Table 5. Dynamic

Table 6. Switching times

Table 7. Source-drain diode

Table 8. TO-3PF type A mechanical data

Table 9. TO-3PF type B mechanical data

Table 10. H²PAK-2 package mechanical data

Table 11. TO-220 type A package mechanical data

Table 12. TO-247 package mechanical data

Table 13. Order codes

Table 14. Document revision history

List of figures

Figure 1. Safe operating area for TO-3PF

Figure 2. Thermal impedance for TO-3PF

Figure 3. Safe operating area for H2PAK-2 and TO-220

Figure 4. Thermal impedance for H2PAK-2 and TO-220

Figure 5. Safe operating area for TO-247

Figure 6. Thermal impedance for TO-247

Figure 7. Output characteristics

Figure 8. Transfer characteristics

Figure 9. Normalized V(BR)DSSvs temperature

Figure 10. Static drain-source on-resistance

Figure 11. Gate charge vs gate-source voltage

Figure 12. Capacitance variations

Figure 13. Normalized gate threshold voltage vs temperature

Figure 14. Normalized on resistance vs temperature

Figure 15. Source-drain diode forward characteristics

Figure 16. Maximum avalanche energy vs TJ

Figure 17. Test circuit for resistive load switching times

Figure 18. Test circuit for gate charge behavior

Figure 19. Test circuit for inductive load switching and diode recovery times

Figure 20. Unclamped inductive load test circuit

Figure 21. Unclamped inductive waveform

Figure 22. Switching time waveform

Figure 23. TO-3PF type A package outline

Figure 24. TO-3PF type B package outline

Figure 25. H²PAK-2 package outline

Figure 26. H²PAK-2 recommended footprint

Figure 27. TO-220 type A package outline

Figure 28. TO-247 package outline

Figure 29. H²PAK-2tape drawing (dimensions are in mm)

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