N-channel enhancement mode standard level 100V power MOSFET with maximum on-state resistance of 4.6mΩ at VGS=10V and housed in a PowerFLAT 5x6 package
This industrial-grade N-channel MOSFET features the latest STPOWER STripFET F8 technology with new oxide-filled trench technology delivering very low conduction losses and low gate charge for extremely competitive switching performance.
The STL120N10F8 offers a 40% figure of merit improvement over previous generation devoices, ensuring major efficiency gains and reduced EMI in motor-control applications, power supplies and converters for telecom and computer systems, LED and low-voltage lighting, as well as consumer appliances and battery-powered devices such as power tools.
- Best on-resistance per area offered by ST for a 100V MOSFET in PowerFLAT 5x6
- 40% lower FOM (Figure of Merit) than previous 100V MOSFET series in terms of on-resistance per gate charge and in line with the best competition
- Excellent switching speed through low device capacitances that minimize dynamic parameters such as gate-drain charge, boosting system efficiency
PSpice library with parameterized models is available to speed up design cycles.
Discover the features of 100V STPOWER STripFET F8 technology for Industrial applications.
STL120N10F8 N-channel 100V power MOSFETs combine extremely low gate-drain charge (QGD) and on-resistance RDS(on), giving 40% better figure of merit (FoM) than comparable devices of the preceding generation.