600/650 V MDmesh M9 and DM9 superjunction power MOSFETs
Improve your power stage
HV MOSFETs in PowerFLAT 8x8 package enhance efficiency for compact AI servers and data center PSUs
HV MOSFETs in PowerFLAT 8x8 package enhance efficiency for compact AI servers and data center PSUs
The MDmesh M9/DM9 series features a very low RDS(on)*Qg figure of merit, enabling increased power levels and higher power density systems. The fast intrinsic diode in the DM9 series significantly improves dv/dt and di/dt for higher ruggedness and reliability.
The high-voltage PowerFLAT 8x8 package expands the series with an ultralow-profile surface-mount package and a Kelvin source connection that improves gate driving and efficiency.
Renewable & high power
- Solar (M9 and DM9)
- Energy generation & Storage (M9 and DM9)
- EV charging station (M9 and DM9)
- Industrial power supply (M9 and DM9)
- Fast Charger (M9 and DM9)
Networking
- Telecom Power/5G (M9 and DM9)
- Server & Datacenter (M9 and DM9)
- AI Server (M9 and DM9)
Industrial motor control
- Specific to MDmesh DM9 series
Introducing our PowerFLAT 8x8 HV series
ST8L65N044M9
N-channel 650 V, 36 mOhm typ., 58 A MDmesh M9 Power MOSFET in a PowerFLAT 8x8 HV package
ST8L60N065DM9
N-channel 600 V, 51 mOhm typ., 39 A MDmesh DM9 Power MOSFET in a PowerFLAT 8x8 HV package
Package innovation and versatility
The MDmesh M9/DM9 series MOSFETs are offered in a variety of packages to suit different application needs:
- compact SMD packages (PowerFLAT8x8 HV with Kelvin pin, SOT223-2, DPAK, and PowerFLAT5x6 HV);
- through-hole packages (TO-220, TO220-FP, and TO-247 long lead or 4-lead);
- innovative performance packages (leadless TO-LL and top-side cooling HU3PAK for highest power density and thermal efficiency).
- Key features and benefits
- Ultralow RDS(on) x Qg FoM
- Specific to MDmesh M9 series
- Improved dynamic dv/dt for higher robustness
- Higher power levels
- Increases power density for smaller designs
- High efficiency and low switching losses
- Specific to MDmesh DM9 series
- Improved diode reverse recovery time (trr)
- Higher dv/dt (120 V/ns) and di/dt (1300 A/µs)
- Optimized body diode recovery and softness
| MDmesh M9 series | MDmesh DM9 series |
|---|---|---|
| PowerFLAT 8x8 HV | ||
| DPAK | ||
| TO-220 | ||
| TO247-4 | ||
| TO-247 long leads |
| MDmesh M9 series | MDmesh DM9 series |
|---|---|---|
| PowerFLAT 8x8 HV | ||
| DPAK | ||
| TO-220 | ||
| TO247-4 | ||
| TO-247 long leads |
- Key features and benefits
- Ultralow RDS(on) x Qg FoM
- Specific to MDmesh M9 series
- Improved dynamic dv/dt for higher robustness
- Higher power levels
- Increases power density for smaller designs
- High efficiency and low switching losses
- Specific to MDmesh DM9 series
- Improved diode reverse recovery time (trr)
- Higher dv/dt (120 V/ns) and di/dt (1300 A/µs)
- Optimized body diode recovery and softness
On-demand webinar
How to achieve higher power levels and better thermal performance for more efficient and compact systems.