Up to 1200 V automotive-grade SiC MOSFETs in an SMD package with top-side cooling

A new 750 V SiC MOSFET in our HU3PAK package

Improved efficiency and thermal performance for more compact and reliable power conversion systems

Improved efficiency and thermal performance for more compact and reliable power conversion systems

With a breakdown voltage up to 1200 V, these AEC-Q101 qualified devices combine the intrinsic features of ST's 3rd-generation of silicon-carbide STPOWER technology with the excellent thermal performance of the SMD package with top-side cooling (HU3PAK). Energy efficiency, system size and weight are improved for a smaller form factor and enhanced performance.

What the STPOWER SiC MOSFETs offer

Thermal performance
- SMD package with top-side cooling

Power efficiency
- Very low RDS(on) over the entire temperature range
- Very low switching losses

Switching performance
- High-speed switching performance
- Source sensing pin

Easier design
- Very fast and robust intrinsic body diode

Automotive qualification
- AEC-Q101 qualified

 

650 V series
in HU3PAK

750 V series
in HU3PAK

1200 V series
in HU3PAK

Breakdown voltage (VDS)

650 V

750 V

1200 V

On-state resistance (max)

63 mΩ , 72 mΩ

78 mΩ

28 mΩ , 87 mΩ

Drain current
(max)

30 A

30 A

30 A , 100 A

Product references

SCT040HU65G3AG

SCT055HU65G3AG

SCT060HU75G3AG

SCT020HU120G3AG

SCT070HU120G3AG

What the STPOWER SiC MOSFETs offer

Key applications

On Board Charger

DC/DC Converter

EV Charging

Solar

Recommended resources

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HU3PAK package mounting guidelines and considerations for the best thermal performance

Technical note

This note provide guidelines for package mounting, handling and soldering, as well as thermal considerations linked to heat sink types and assembly methods. It provides information on how to limit the chip's temperature by managing the heat transfer between the chip and the ambient atmosphere to ensure the correct performance of a component and to avoid failure.

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