Overcome thermal and power limits in AI servers
Efficiency and power density for next-generation infrastructure
Multi-stage power and safety architecture
Multi-stage power and safety architecture
AI servers are redefining data center infrastructure, increasing the need for efficient power delivery and advanced thermal management within compact, high-density footprints. ST offers a broad portfolio of power and protection solutions, including PowerGaN transistors, SiC devices, silicon MOSFETs, STPROTECT devices, and advanced top-side-cooling packages that reduce PCB temperatures and enable higher power density.
Powering the core architecture
AI server power supply units
Solid-state transformers (SSTs)
Uninterruptible power supplies (UPS)
From rack-level challenges to complete portfolio solutions
| What it means | Recommended ST solutions | Key benefit |
|---|---|---|---|
| Power density and peak consumption | Delivering more power within compact AI platforms | Wide-bandgap PowerGaN transistors | Higher power density and faster switching |
| Thermal dissipation and heavy workloads | Managing intense heat and reducing energy loss | STPOWER SiC MOSFETs and diodes Top-side cooling packages | High-voltage capability and strong thermal performance |
| High-voltage PFC efficiency and reliability | Converting AC power efficiently | MDmesh M9 and DM9 superjunction silicon MOSFETs | 600 V and 650 V stages with a broad package choice |
| 48 V bus transients and short circuits | Protecting against voltage spikes and faults | STripFET F8 silicon MOSFETs and STPROTECT ICs | Fast protection and high-current regulation |
| Design complexity and time to market | Accelerating evaluation and integration | Validated reference platforms, a broad multitechnology portfolio, and application support | Lower design risk and faster time-to-market |
Explore core product families and technologies
Silicon carbide MOSFETs and diodes
Engineered for primary high-voltage rectification and switching circuits. Ideal for high-temperature, heavy-duty server workloads.
PowerGaN transistors for high-frequency (100 V/700 V)
Next-generation transistors for high-frequency buck, boost, and resonant power stages in ultra-compact designs.
High-voltage superjunction MOSFETs (M9/DM9)
Mainstream silicon switches optimized for PFC front ends and main DC-DC stages, available in multiple packages.
Low-voltage MOSFETs
(STripFET F8)
Low-side switches designed for 48 V bus distribution, output regulation, and secondary protection.