ST has extended its portfolio of low-voltage MOSFETs with the introduction of the STPOWER STripFET F8 technology.
This AEC-Q101 qualified technology offers a wide package solution from 30 to 150V to meet all the requirements for very high-power-density solutions.
Cutting both on-resistance and switching losses while optimizing body-diode properties, STripFET F8 technology saves energy and ensures low noise in power conversion, motor control and power distribution circuits.
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Extended STripFET F8 portfolio with both industrial and automotive MOSFETs
Our STripFET F8 portfolio is expanding with new 80 V power MOSFETs for both industrial and automotive applications, complementing the existing 40 V and 100 V offerings. Combining very low RDS on with compact power packages, these devices support high-current power distribution, motor control, battery management, industrial power supplies and DC-DC converters in space-constrained systems, with the robustness and reliability these applications require.
With 40 V, 80 V and 100 V options available in a range of compact, high-current packages, the portfolio gives customers greater flexibility to choose the right solution for their application.
The portfolio is further complemented by Smart STripFET F8 technology, designed for applications where minimizing conduction losses is the priority and fast switching is not required. It offers ultra-low RDS(on) in a compact PowerFLAT 5x6 package, with a maximum operating temperature of 175 °C and automotive-grade robustness.
Applications
These N-channel low voltage MOSFETs simplify system designs and increase efficiency in applications such as automotive, computer and peripherals, data center, telecom, solar, power supplies and converters, battery chargers, home and professional appliance, gaming, drones, and more.
Product types
ST’s advanced STripFET F8 technology ensures excellent switching speed efficiency through low device capacitances that minimize dynamic parameters such as gate-drain charge then boosting the system efficiency. Designers can select higher switching frequencies than STtripFET F7 technology, permitting the use of smaller capacitive and magnetic components. The result is smaller circuit size and reduced bill of material costs as well as an increased power density of the final application.
Smart STripFET F8 devices complement this portfolio with variants optimized for ultra low R_(DS(on)) and compact packages such as PowerFLAT 5x6, making them a robust choice for high current power distribution and battery management applications in space constrained automotive systems.
Benefits
- Very low conduction losses with increased efficiency and more compact designs
- Low EMI emissions
- Body diode softness and low gate-drain charge to ensure excellent switching behavior
- Tighter gate threshold voltage spread for easier parallel connections
- Enables smaller package solutions