Establishing new performance benchmarks for low-voltage power devices
Establishing new performance benchmarks for low-voltage power devices
The STripFET F8 technology introduces a significant advancement in the performance of power MOSFETs. By significantly reducing internal capacitances and gate charge, this new 40 V and 100 V device series achieves lower switching losses and higher overall conversion efficiency.
Leveraging this foundation, the new Smart STripFET F8 series is specifically engineered to optimize conduction performance and silicon area.
The first device belonging to this new series is the STL059N4S8AG, a high-performance power MOSFET that achieves a very low conduction resistance of RDS(on)=0.59 mΩ, integrated in a lowparasitic, small footprint PowerFLAT (5×6 mm) package.
Explore the first 40 V Smart STripFET F8
STL059N4S8AG: Ultralow losses for automotive power distribution
STL059N4S8AG: Ultralow losses for automotive power distribution
The STL059N4S8AG sets a new benchmark in conduction and switching efficiency, thanks to an ultralow on-state resistance of RDS(on)=0.59 mΩ. Designed for operation in harsh conditions, it is AEC-Q101 qualified for automotive applications and supports a maximum junction temperature of 175∘C. This combination of thermal performance, low conduction losses, and compact package makes it particularly suitable for high-current applications such as battery management systems (BMS), high-current power distribution, and solid-state relays.
Accelerate your design with eDSim
Accelerate your design with eDSim
eDSim supports the STripFET F8 MOSFET series, offering rapid and reliable electrical simulation capabilities for SMPS and analog ICs. This powerful tool assists in designing and optimizing automotive systems, ensuring seamless integration and effective use across various automotive applications.