Overcome density and efficiency challenges with MasterGaN

Advanced power system engineered to meet tomorrow’s high-voltage demands

As automation, digitalization, and renewable energy become pivotal across industries, the demand for efficient and reliable uninterruptible power supply (UPS) systems continues to grow rapidly. This trend drives the need for higher power density and efficiency to manage extreme thermal loads while ensuring long‑term reliability. ST’s advanced MasterGaN6 and MasterGaN7 SiPs integrate two GaN transistors and an enhanced gate driver in a compact package, delivering higher efficiency and power density while simplifying PCB layout. Dedicated pins for fault indication and standby further help optimize energy efficiency, thermal performance, and system robustness in next‑generation UPS designs.

Ride the GaN wave with ST MasterGaN: higher power density, smaller size

mastergan6

MasterGaN6 advanced power System-in-Package

MasterGaN6 advanced power System-in-Package

Integrates two enhancement-mode GaN transistors in a half-bridge, driven by a high-voltage, high‑frequency gate driver, with 140 mΩ typical on-resistance and 650 V blocking voltage.

mastergan7

MasterGaN7 advanced power System-in-Package

MasterGaN7 advanced power System-in-Package

Integrates two enhancement-mode GaN transistors in a half-bridge, driven by a high-voltage, high‑frequency gate driver, with 270 mΩ typical on-resistance and 6 A input drain current.

Key features

  • 650 V GaN half bridge
  • GaN-optimized gate driver
  • OTP, UVLO, cross-conduction protections
  • Integrated LDO and bootstrap diode
  • Dedicated pins for fault indication and standby functionality
  • Hard-switching topology
  • 3.3 to 15 V input pins voltage range
  • Compact GQFN 9x9 mm2 package

Designed for applications from 45 W to 500 W

battery-charger

High power adapters for consumer

car

EV charging

ups

Uninterruptable Power Supply

Evaluate our offer

evlmg6

EVLMG6 evaluation board

EVLMG6 evaluation board

GaN-based half-bridge power module based on MasterGaN6, suitable for power applications requiring fast wake up time. The module can be easily configured to operate with many resonant and hard switching topologies.

evlmg7

EVLMG7 evaluation board

EVLMG7 evaluation board

GaN-based half-bridge power module based on MasterGaN7, suitable for power applications requiring fast wake up time. The module can be easily configured to operate with many resonant and hard switching topologies.

blog mastergan7

MasterGaN6 and MasterGaN7 Make GaN power devices easier to use with integrated LDOs and new dedicated pins

MasterGaN6 and MasterGaN7 Make GaN power devices easier to use with integrated LDOs and new dedicated pins

Learn how designers can achieve higher power density, a simplified bill of materials, and higher switching frequencies using new MasterGaN devices with integrated LDOs.