Advanced power system engineered to meet tomorrow’s high-voltage demands
As automation, digitalization, and renewable energy become pivotal across industries, the demand for efficient and reliable uninterruptible power supply (UPS) systems continues to grow rapidly. This trend drives the need for higher power density and efficiency to manage extreme thermal loads while ensuring long‑term reliability. ST’s advanced MasterGaN6 and MasterGaN7 SiPs integrate two GaN transistors and an enhanced gate driver in a compact package, delivering higher efficiency and power density while simplifying PCB layout. Dedicated pins for fault indication and standby further help optimize energy efficiency, thermal performance, and system robustness in next‑generation UPS designs.
Ride the GaN wave with ST MasterGaN: higher power density, smaller size
MasterGaN6 advanced power System-in-Package
MasterGaN6 advanced power System-in-Package
Integrates two enhancement-mode GaN transistors in a half-bridge, driven by a high-voltage, high‑frequency gate driver, with 140 mΩ typical on-resistance and 650 V blocking voltage.
MasterGaN7 advanced power System-in-Package
MasterGaN7 advanced power System-in-Package
Integrates two enhancement-mode GaN transistors in a half-bridge, driven by a high-voltage, high‑frequency gate driver, with 270 mΩ typical on-resistance and 6 A input drain current.
Key features
- 650 V GaN half bridge
- GaN-optimized gate driver
- OTP, UVLO, cross-conduction protections
- Integrated LDO and bootstrap diode
- Dedicated pins for fault indication and standby functionality
- Hard-switching topology
- 3.3 to 15 V input pins voltage range
- Compact GQFN 9x9 mm2 package
Designed for applications from 45 W to 500 W
Evaluate our offer
EVLMG6 evaluation board
EVLMG6 evaluation board
GaN-based half-bridge power module based on MasterGaN6, suitable for power applications requiring fast wake up time. The module can be easily configured to operate with many resonant and hard switching topologies.
EVLMG7 evaluation board
EVLMG7 evaluation board
GaN-based half-bridge power module based on MasterGaN7, suitable for power applications requiring fast wake up time. The module can be easily configured to operate with many resonant and hard switching topologies.
MasterGaN6 and MasterGaN7 Make GaN power devices easier to use with integrated LDOs and new dedicated pins
MasterGaN6 and MasterGaN7 Make GaN power devices easier to use with integrated LDOs and new dedicated pins
Learn how designers can achieve higher power density, a simplified bill of materials, and higher switching frequencies using new MasterGaN devices with integrated LDOs.