Overcome density and efficiency challenges with MasterGaN
Advanced power system engineered to meet tomorrow’s high voltage demands
As automation, digitalization, and renewable energy become pivotal across industries, the demand for efficient and reliable Uninterruptible Power Supply (UPS) systems continues to grow rapidly. This trend drives the need for higher power density and efficiency to manage extreme thermal loads while ensuring long‑term reliability. ST’s MasterGaN6 advanced SiP integrates two GaN transistors and an enhanced gate driver in a compact package for higher efficiency and power density while simplifying PCB layout for designers. Dedicated pins for fault indication and standby further help optimize energy efficiency, thermal performance, and system robustness in next‑generation UPS designs.
MASTERGAN6 advanced power System-in-Package
MASTERGAN6 advanced power System-in-Package
Integrates two enhancement-mode GaN transistors in a half-bridge, driven by a high-voltage, high‑frequency gate driver, with 140 mΩ typical on-resistance and 650 V blocking voltage.
Key features
- 650V GaN half bridge
- GaN optimized gate driver
- OTP, UVLO, cross-conduction protections
- Integrated LDO and bootstrap diode
- Dedicated pins for fault indication and standby functionality
- Hard switching topology
- 3.3 to 15 V input pins voltage range
- Compact GQFN 9x9 mm2 package
Designed for applications from 45 W to 500 W
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EVLMG6 evaluation board
EVLMG6 evaluation board
GaN-based half-bridge power module based on MASTERGAN6, suitable for power applications requiring fast wake up time. The module can be easily configured to operate with many resonant and hard switching topologies.