MASTERGAN6
Active
Design Win
650 V enhancement mode GaN High power density half-bridge with high voltage driver

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Product overview

Key Benefits

Easy Design

  • Dedicated pins for fault indication and standby functionality
  • 3.3 to 15 V input pins voltage range

 

Robust

  • Optimized burst‑mode operation for ultra‑fast wakeup
  • OTP, UVLO, cross-conduction protections

Compact

  • Integrated power GaN
  • Smart solution in GQFN 9x9 mm2 package

Description

The MASTERGAN6 is an advanced power system-in-package integrating two enhancement mode GaN transistors in a half-bridge configuration driven by a high-voltage, high frequency gate driver.

The integrated power GaNs have typical RDS(ON) of 140 mΩ and 650 V drain source blocking voltage.

The MASTERGAN6 features linear regulators on both the lower and upper driving sections to optimize driving efficiency. The high side of the embedded gate driver can be supplied by the integrated bootstrap diode. The interlocking function avoids cross-conduction conditions.

The advanced driver section, thanks to small propagation delay, very short wake-up time, and short, minimum on-times, enables high frequency switching operation.

The extended range of input pins as well as the remote signaling pin (FLT) allow easy interfacing with controllers, microcontrollers, or DSP units. The standby pin allows to reduce the power consumption of the device during inactive periods.

The MASTERGAN6 operates in the industrial temperature range, -40 °C to 125 °C.

The device is available in a compact 9x9x1 mm QFN package.

  • All features

    • Power system-in-package integrating 650 V GaN transistors half-bridge with high-voltage gate driver
    • 140 mΩ typ low-side and high-side RDS(ON) with IDS(MAX) = 10 A
    • Linear regulators to regulate high-side and low-side driver supply voltage
    • Overall driver’s propagation delay of 45 ns and 35 ns minimum pulse
    • Very fast wake-up time of high-side driver
    • Externally adjustable turn-on resistors
    • UVLO protection on VCC and high-side driver supply voltage
    • Interlocking function
    • Dedicated pins for standby and shutdown with fault pin for remote signal
    • 3.3 V to 15 V (typ.) compatible inputs with hysteresis and pull-down
    • Thermal shutdown protection

eDesignSuite

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Displays interactive and annotated schematic
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Provides a step-by-step optimized design of power section and control loop
Generates the STM32Cube embedded software package for custom applications and allows firmware project generation, compatible with multiple STM32 IDEs

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STPOWER Studio

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Provides power loss and temperature graphs
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EDA Symbols, Footprints and 3D Models

STMicroelectronics - MASTERGAN6

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Longevity Commitment Longevity Starting Date Material Declaration**
MASTERGAN6TR
Active
TFQFPN 9X9X1.05 35L PITCH 0.6MM Industrial Ecopack2 - -

MASTERGAN6TR

Package:

TFQFPN 9X9X1.05 35L PITCH 0.6MM

Material Declaration**:

PDF

Marketing Status

Active

Package

TFQFPN 9X9X1.05 35L PITCH 0.6MM

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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