Product overview
Key Benefits
650 V GaN half-bridge in package
Integrated half-bridge with gate driver for compact high-voltage power designs.
Quick wake up for high efficiency
Ultra-fast wake-up helps achieve efficient low-load burst operation.
Built-in protection and standby
UVLO, thermal shutdown and standby control improve safety and power savings.
Description
The MASTERGAN7 is an advanced power system-in-package integrating two enhancement mode GaN transistors in a half-bridge configuration driven by a high-voltage, high frequency gate driver.
The integrated power GaNs have typical RDS(ON) of 270 mΩ and 650 V drain source blocking voltage.
The MASTERGAN7 features linear regulators on both the lower and upper driving sections to optimize driving efficiency. The high side of the embedded gate driver can be supplied by the integrated bootstrap diode. The interlocking function avoids cross-conduction conditions.
The advanced driver section, thanks to small propagation delay, very short wake-up time, and short, minimum on-times, enables high frequency switching operation.
The extended range of input pins as well as the remote signaling pin (FLT) allow easy interfacing with controllers, microcontrollers, or DSP units. The standby pin allows to reduce the power consumption of the device during inactive periods.
The MASTERGAN7 operates in the industrial temperature range, -40 °C to 125 °C.
The device is available in a compact 9x9x1 mm QFN package.
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All features
- Power system-in-package integrating 650 V GaN transistors half-bridge with high-voltage gatedriver
- 270 mΩ typ low-side and high-side RDS(ON) with IDS(MAX) = 6 A
- Linear regulators to regulate high-side and low-side driver supply voltage
- Overall driver’s propagation delay of 45 ns and 35 ns minimum pulse
- Very fast wake-up time of high-side driver
- Externally adjustable turn-on resistors
- UVLO protection on VCC and high-side driver supply voltage
- Interlocking function
- Dedicated pins for standby and shutdown with fault pin for remote signal
- 3.3 V to 15 V (typ.) compatible inputs with hysteresis and pull-down
- Thermal shutdown protection
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - MASTERGAN7
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| MASTERGAN7TR | Active Product is in volume production. | TFQFPN 9X9X1.05 35L PITCH 0.6MM | Industrial | Ecopack2 | - | - |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
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Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||||
| MASTERGAN7TR | | | distributors No availability of distributors reported, please contact our sales office | |||||||||||
MASTERGAN7TR Active
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors