AEC-Q101 qualified, this low-voltage Power MOSFET meets all the requirements for very high-power-density solutions
Featuring a maximum on-resistance of 0.75mOhm (VGS @ 10 V), the STL325N4LF8AG saves energy and ensures low noise in power conversion, motor control and power distribution circuits.
Key features
The device emits extremely low electromagnetic interference (EMI) compared to other similar devices in the market and ensures an outstanding short-circuit ruggedness, withstanding up to 1000 A (pulses shorter than 10 µs).
Application examples
Recommended resources
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Discover the advantages of the first sub-mΩ, low-voltage power MOSFETs in a PowerFLAT (5 x 6 mm) package.
Cutting both on-resistance and switching loss while optimizing body-diode properties, ST’s low-voltage MOSFETs save energy and ensure low noise in circuits for power conversion, motor control, and power distribution applications.