PowerGaN transistors
Improved efficiency, increased power density, lower system cost
Breaktrough technology for high performance power applications
Breaktrough technology for high performance power applications
ST’s GaN HEMT transistors, belonging to the STPOWER family, bring the full performance advantages of gallium nitride to power conversion designs. These e-mode p-GaN devices deliver low conduction losses, ultrafast switching, and zero reverse recovery for small, light, and cool power conversion systems.
An outstanding RDS(on) x QG figure of merit, achieved through very low specific on-resistance per unit area combined with ultralow gate charge and intrinsic capacitances, reduces both switching and conduction losses across the operating range. This enables higher switching frequencies, smaller passive components, and advanced topologies.
Home appliances
Smart chargers and adapters
LED lighting
Motor control
Power supplies and converters
Energy generation and distribution
Why PowerGaN?
- Reduced energy consumption
- Reduced cooling requirements
- Higher system performance
- Smaller packages with the same power level
- Higher power in the same package
- Smaller form factors at system level
Choose your PowerGaN device
TO-LL
Leadless package with excellent thermal performance, ideal for compact, high‑power stages that must dissipate heat efficiently.
PowerFLAT 8x8 HV
Ultralow profile package for slim designs, minimizing parasitic in high frequency PowerGaN based converters.
DPAK
Well established industry standard enabling cost-effective upgrades of existing boards with higher efficiency