M24LR04E-R
NRND
Design Win
Dynamic NFC/RFID tag IC with 4-Kbit EEPROM, energy harvesting, I2C bus and ISO 15693 RF interface

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Product overview

Description

The M24LR04E-R device is a Dynamic NFC/RFID tag IC with a dual-interface, electrically erasable programmable memory (EEPROM). The logic scheme is shown in Figure 1.

It features an I2C interface and can be operated from a VCCpower supply. It is also a contactless memory powered by the received carrier electromagnetic wave. The M24LR04E-R is organized as 512 × 8 bits in the I2C mode and as 128 × 32 bits in RF mode.

The M24LR04E-R also features an energy harvesting analog output, as well as a user-configurable digital output pin toggling during either RF write in progress or RF busy mode.

  • All features

    • Belonging to ST25 family, which includes all NFC/RF ID tag and reader products from ST
    • I2C interface
      • Two-wires I2C serial interface supports 400 kHz protocol
      • Single supply voltage:
        • 1.8 V to 5.5 V
      • Byte and Page Write (up to 4 bytes)
      • Random and Sequential read modes
      • Self-timed programming cycle
      • Automatic address incrementing
      • Enhanced ESD/latch-up protection
      • I²C timeout
    • Contactless interface
      • ISO 15693 and ISO 18000-3 mode 1 compatible
      • 13.56 MHz ± 7 kHz carrier frequency
      • To tag: 10% or 100% ASK modulation using 1 out of 4 (26 Kbit/s) or 1 out of 256 (1.6 Kbit/s) pulse position coding
      • From tag: load modulation using Manchester coding with 423 kHz and 484 kHz subcarriers in low (6.6 kbit/s) or high (26 kbit/s) data rate mode. Supports the 53 kbit/s data rate with Fast commands
      • Internal tuning capacitance: 27.5pF
      • 64-bit unique identifier (UID)
      • Read Block & Write (32-bit blocks)
    • Digital output pin
      • User configurable pin: RF write in progress or RF busy mode
    • Energy harvesting
      • Analog pin for energy harvesting
      • 4 sink current configurable ranges
    • Temperature range
      • From –40 to 85 °C
    • Memory
      • 4-Kbit EEPROM organized into:
        • 512 bytes in I2C mode
        • 128 blocks of 32 bits in RF mode
      • Write time
        • I2C: 5 ms (max.)
        • RF: 5.75 ms including the internal Verify time
      • Write cycling endurance:
        • 1 million write cycles at 25 °C
        • 150k write cycles at 85 °C
      • More than 40-year data retention
      • Multiple password protection in RF mode
      • Single password protection in I2C mode
      • Package
        • SO8 (ECOPACK2®)
        • TSSOP8 (ECOPACK2®)
        • UFDFPN8 (ECOPACK2®)

Circuit Diagram

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EDA Symbols, Footprints and 3D Models

STMicroelectronics - M24LR04E-R

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Longevity Commitment Longevity Starting Date Material Declaration**
M24LR04E-RDW6T/2
NRND
TSSOP-8L Industrial Ecopack2 - -
M24LR04E-RMC6T/2
NRND
UFDFPN 8 2x3x0.6 Industrial Ecopack2 - -
M24LR04E-RMN6T/2
NRND
SO8 Industrial Ecopack2 - -

M24LR04E-RDW6T/2

Package:

TSSOP-8L

Material Declaration**:

PDF XML

Marketing Status

NRND

Package

TSSOP-8L

Grade

Industrial

RoHS Compliance Grade

Ecopack2

M24LR04E-RMC6T/2

Package:

UFDFPN 8 2x3x0.6

Material Declaration**:

PDF XML

Marketing Status

NRND

Package

UFDFPN 8 2x3x0.6

Grade

Industrial

RoHS Compliance Grade

Ecopack2

M24LR04E-RMN6T/2

Package:

SO8

Material Declaration**:

PDF XML

Marketing Status

NRND

Package

SO8

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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