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Silicon carbide - The latest breakthrough in high-voltage switching and rectification
ST’s portfolio of silicon carbide devices includes 650 / 1200 V SiC MOSFETs featuring the industry’s highest junction temperature rating of 200 °C for more efficient and simplified designs, and SiC diodes ranging from 600 to 1200 V which feature negligible switching losses and 15% lower forward voltage (VF) than standard silicon diodes.
Main characteristics:
Main characteristics:
1200 V silicon-carbide diodes, Industrial and automotive-grade
Unbeatable efficiency and robustness
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