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Rad-Hard Power MOSFETs

ST's hi-rel and rad-hard power MOSFETs are specifically designed to cover hi-rel requirements and space applications. The are available with a range of breakdown voltages up to 100 V, drain current up to 48 A and RDS(on) down to 30 mΩ.

They are also qualified according to ESCC space specifications and meet the TID radiation performance of 50 krad for N-channel MOSFETs and 100 krad for P-channel ones. Fully designed in Europe, these products are only subject to European export rules.

They are available both in die and packaged versions (including the through-hole hermetic package TO-254AA). 
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