STH260N6F6-2
N-channel 60 V, 1.7 mOhm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package-
Active
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
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Datasheet
Key Features
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
Design Resources
TopTechnical Documentation
Product Specifications
| Description | Version | Size |
|---|---|---|
DS7207: N-channel 60 V, 1.7 mΩ typ., 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package
|
4.0 | 725 KB |
Application Notes
| Description | Version | Size |
|---|---|---|
|
AN4191: Power MOSFET: Rg impact on applications
|
1.0 | 1,489 KB |
Presentations & Training Material
Presentations
| Description | Version | Size |
|---|---|---|
|
60 V to 80 V STripFETVI DeepGATE
|
1.0.0 | 748 KB |
|
STripFET VI DeepGATE
|
1.0.0 | 892 KB |
Sample & Buy
Top| Part Number | Marketing Status | Package | Packing Type | Automotive Grade | Order From ST | Unit Price (US$)* @ 1000 | Distributor Availability | RoHS Compliance Grade | Download Material Declaration** |
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| STH260N6F6-2 | Active | H2PAK-2 | Tape And Reel | _ | 3.5 |
| Ecopack1 | PDF XML | ||||||||||||||||||||||||||||||||||||
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors (**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices. |
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