STS1DNC45
Obsolete
Design Win
Dual N-channel 450 V, 4.1 Omh typ., 0.4 A SuperMESH Power MOSFET in a SO-8 package

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Product overview

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

  • All features

    • TYPICAL RDS(on) = 4.1
    • GATE CHARGE MINIMIZED
    • STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STS1DNC45

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