AN5036 · Application noteGuidelines for thermal management on STM32 MCUs and MPUs
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Bottom cooling - host PCB design

Bottom cooling - host PCB design

To provide enough ‘thermal vias’, as the host PCB is a secondary heat sink for the device, it is important to use the recommended stack-up and to optimize the PCB layout beneath the package.

A significant power proportion is drawn from the package to ambient air through the host board by the paths detailed in the next sections (sorted by decreasing order of importance). The design rule implementation for ground and power connections is necessary for cooling and power distribution.

It is not possible to produce a set of rigid rules for layer construction within a PCB because each design has its own requirements.

Host PCB ground and power layout

The ground (GND) plane must have a low resistance (thermal and electrical) for all PCB areas. This improves signal quality and power dissipation. It also reduces EMI. The use of a ground layer and flooding of other layers with multiple vias maintain the resistance at a low level.

Placing as many thermal vias as possible on the ground and power planes just below the package, ensures that there is enough continuous copper between the adjacent vias for power distribution and thermal dissipation. A compromise must be found.

The possible thermal vias are listed below:
  • ground vias: connecting GND to the unified GND plane (these are the most efficient thermal vias)
  • power vias: connecting power to the power plane

The thermal vias conduct heat from the device to the internal GND and power planes. These planes spread the heat inside the PCB that acts as a planar heat sink.

Additional GND areas on outer layers

On the outer layers, some GND areas can be added wherever functional tracks are absent. Connect these areas to GND by a network of vias wherever possible.

These GND areas help in heat spreading and dissipation along the board. The figure below shows the principle of additional GND areas and vias to the GND plane.

Figure 9. Principle of additional GND areas and vias to the GND plane


Thermal analysis examples

This section shows examples of thermal analysis performed on a discovery kit (STM32H747XI MCU), an evaluation board (STM32MP157), and an internal validation board (STM32MP135 MPU).

These analyses provide some answers to the following questions (at maximum ambient temperature 85 °C):
  • How much does the power dissipation admit the leakage?
  • Is TJ < 125 °C?
  • Is there a risk of thermal runaway?

Discovery kit with STM32H747XI MCU

This thermal analysis has been done on a Discovery kit with an STM32H747XI device (STM32H747I-DISCO), without casing (see the figure below).

Figure 10. STM32H747I-DISCO. This picture is not contractual.
The test case is the following:
  • Run mode (400 MHz) data processing running from the flash memory
  • Cache ON
  • All peripherals enabled

The temperature sensor connected to the ADC3 VINP [18] input channel, is used for TJ measurement.

The TJ measurements are read via the USART2 using the DMA transfer, without CPU interruption.

STM32H7 power dissipation

As stated in STM32 thermal parameters, the dissipated power varies with TJ. The power consumption in this example is measured for different TJ values (see the table and the figure below).

Table 4. STM32H747XI power dissipation versus Tj
TJ (°C)STM32H747I-DISCO (supplied with 5 V)STM32H747XI power dissipation (mW)
Current consumption (A)Power consumption (mW)
46.90.3951975737
51.80.4052025769
55.80.4122060788
61.50.4232115824
65.70.4302150852
710.4422210888
77.30.4522260920
81.90.4652325965
87.50.48024001010
920.49024501056
96.80.50925451104
102.50.53426701179
106.30.55027501229
111.30.57128551298
116.90.60030001387
1230.63531751499
1250.65032501559
Figure 11. Junction-temperature-dependent dissipated power for STM32H7

STM32H7 thermal measurements at TA = 25 °C

The figures and table below detail the thermal measurements performed at TA = 25 °C.
Figure 12. STM32H747XI thermal measurements at TA = 25 °C
Table 5. STM32H7 thermal measurements at TA = 25°C
TJ (°C)Thermal camera module measurement (°C)STM32H7 power consumption (mW)Total power consumption (mW)
AvgMinMax
46.945.539.750.67371975
Figure 13. HDC at 25 °C and junction-temperature-dependent dissipated power for STM32H7


Once the design HDC is defined (by measurement at 25 °C), and assuming that this HDC is constant at 25 °C and 85 °C, the operating point of the design at 85 °C is given by translating the HDC at 85 °C. See the figure and table below.
Figure 14. HDC at 85 °C and junction-temperature-dependent dissipated power for STM32H7
Table 6. Measurement interpolation at TA = 85 °C for STM32H7
ParameterValue
TJ119 °C
PTOT3050 mW

In conclusion, the STM32H7 device is safe, with no thermal runaway, and TJ remaining < 125 °C.