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Power Bipolar

ST’s broad range of power bipolar transistors will give you the perfect fit for your energy-efficient designs. The range includes Darlington transistors and BJTs with a VCES from 15 to 1700 V.

Key features of ST’s power bipolar transistors include:

  • Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses
  • Integrated diode versions for reduced component count
  • Well-controlled hFE parameter for increased reliability
  • Best cost-performance ratio
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