CATEGORIES

Power transistors

power transistors

Leading-edge power technologies for both high-and low-voltage applications combined with a full package range and innovative die bonding technologies exemplify ST’s innovation in power transistors belonging to the STPOWER family. ST offers a wide portfolio of power MOSFETs ranging from -100 to 1700 V, IGBTs with breakdown voltages ranging from 300 to 1700 V and power bipolar transistors ranging from 15 to 1700 V. Due to the improved thermal design of ST's power electronics systems, our silicon-carbide (SiC) MOSFETs ensure good robustness thanks to the industry’s highest temperature rating of 200 °C and voltage ranging from 650 to 2200 V. As well as, our Gallium Nitride on silicon substrate (GaN/Si) transistors allow highest efficiency and highest power density thanks to outstanding specific dynamic on-state resistance and small capacitances ranging to 100, 650 and 900 V.

Our wide STPOWER product portfolio combined with state-of-the art packaging (i.e. discrete and module) and protections for high reliability and safety helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime.

ST’s 10-year longevity commitment program ensures stable and continuous supply for customers

ST has certified several STPOWER high-voltage MOSFETs, IGBTs and Intelligent Power Modules (IPMs) for 10-year longevity. STPOWER SiC MOSFETs are also included in the program, with a minimum longevity commitment of 7 years. This program supports customer design investments by ensuring that selected devices are available during a minimum of 10 or 7 years from the notification date.

Check-out the list of our certified STPOWER transistors and modules here.

Wide bandgap transistor

wide bandgap transistors sic mosfetSiC MOSFET from 650 V to 2200 V complemented by GaN transistor from 100 V, 650 V and 900 V allowing for increased power efficiency, smaller size, lighter weight, lower system cost or all of these together.

Power MOSFET

mosfet

Broad range of breakdown voltages from -100 V to 1700 V, with low gate charge and low on-resistance, combined with state-of-the art packaging.

IGBT

IGBT

Breakdown voltages from 300 V to 1700 V. Low VCE(SAT) for reduced conduction losses. Improved switch-off energy spread versus increasing temperature.

Power Bipolar

power bipolar

The range includes Darlington transistors and BJTs with a VCES from 15 V to 1700 V.

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eDesignSuite

eDesignSuite is a comprehensive set of easy-to-use design-aid utilities ready to help you streamline the system development process with a wide range of ST products.

Power Management Design Center

Thermal-electrical Simulators for Components

Signal Conditioning Design Tool

NFC/RFID Calculators

Choose design tool:

Power Supply Design Tool

SMPS design, by topology, by type and by product
PFC design with analog and digitial control
Supports various PCB configurations
Choose type:
DC/DC
AC/DC
Solar Battery Charger

LED Lighting Design Tool

Handles AC-DC and DC-DC design in common topologies
Displays interactive and annotated schematic
Provides current/voltage graphs, Bode plots, efficiency curves and power-loss data
Choose type:
DC/DC
AC/DC

Digital Power Workbench

Provides a step-by-step optimized design of power section and control loop
Generates the STM32Cube embedded software package for custom applications and allows firmware project generation, compatible with multiple STM32 IDEs

Power Tree Designer

Specify input/output power for each node in the tree
Check for consistency
Design each individual node
Choose design tool:

AC Switches Simulator

Select ratings and application waveforms
Get junction temperature and blocking voltage graphs
Search and sort suitable devices

Rectifier Diodes Simulator

Select ratings and application waveforms
Estimate power losses
Search and sort suitable devices

STPOWER Studio

Supports long mission profiles
Provides power loss and temperature graphs
Helps define heatsink thermal properties

Twister Sim

Help select the right ViPOWER Automotive power device
Supports load-compatibility, wiring harness optimization, fault condition impact and diagnostic analysis
Supports various PCB configurations

TVS Simulator

Specify system ratings and surge waveform
Search and sort suitable devices

Estimate

Build simple schematics and firmware inputs in minutes
Quickly generate reliable estimates of battery life, system power consumption and bill of materials costs
Choose design tool:

Active Filters

Handles multi-stage-designs and common topologies
Returns circuit component values
Provides gain, phase and group delay graphs
Low Pass, High Pass and Band Pass

Comparators

Handles most common configurations
Returns circuit components values
Provides I/O signal waveforms
Inverting, Non Inverting, Window

Low side Current Sensing

Returns circuit component values
Provides current error graphs

High side Current Sensing

Provides current error graphs.
Help to select the right High side current sensing and shunt devices.
Choose design tool:

NFC Inductance

Input geometry and substrate properties
Get antenna impedance

UHF Link Budget

Enter forward and reverse link characteristics
The tool returns link budget estimate

NFC Tuning Circuit

Enter antenna parameter and matching target
Select the topology of the matching network
The tool returns component values for the desired design targets