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Based on the advanced and innovative properties of wide bandgap materials, ST’s silicon carbide (SiC) MOSFETs feature very low RDS(on) * area for the 1200 V rating combined with excellent switching performance, translating into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance * area even at high temperatures and excellent switching performances versus the best-in-class 1200 V IGBTs in all temperature ranges, simplifying the thermal design of power electronic systems.

The main features and benefits of our SiC MOSFETs include:

  • Very high temperature handling capability (Tj max = 200 °C) leading to reduced PCB form factors (simplified thermal management) as well as improved system reliability
  • Significantly reduced switching losses (minimal variation versus temperature) resulting in more compact designs (with smaller passive components)
  • Low on-state resistance (80 mΩ typ @ 25 °C) resulting in higher system efficiency (reduced cooling requirements)
  • Simple to drive (cost-effective network driving)
  • Very fast and robust intrinsic body diode (no need for external freewheeling diode, thus more compact systems)

New 1200 V, 215 mΩ (typ) SiC power MOSFET

ST has extended its SiC MOSFET portfolio with the introduction of the 215 mΩ (typ), 1200 V SCT20N120. Just as the 80 mΩ version (SCT30N120), the device is packaged in the proprietary HiP247™ package and features the industry’s highest junction temperature rating of 200 °C. It shows a very small variation of the on-state resistance versus Tj and also the switching performance is consistent over temperature. This easy-to-drive device can operate at three times the switching frequency of similar-rated IGBTs and results in more compact, reliable and efficient designs in applications such as solar inverters, high-voltage power supplies and high-efficiency drives.
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