SCTH60N120G2-7

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Design Win

Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an H2PAK-7 package

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Product overview

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

  • All features

    • Very fast and robust intrinsic body diode
    • Extremely low gate charge and input capacitance
    • Source sensing pin for increased efficiency

EDA Symbols, Footprints and 3D Models

STMicroelectronics - SCTH60N120G2-7

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SCTH60N120G2-7
Active
H2PAK-7 Industrial Ecopack1

SCTH60N120G2-7

Package:

H2PAK-7

Material Declaration**:

PDF XML

Marketing Status

Active

Package

H2PAK-7

Grade

Industrial

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

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SCTH60N120G2-7 Available at distributors

Distributor availability of SCTH60N120G2-7

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Active
EAR99 NEC Tape and Reel H2PAK-7 - - CHINA

SCTH60N120G2-7 Active

Package:
H2PAK-7
ECCN (US):
EAR99
Budgetary Price (US$)*/Qty:
-

Part Number:

SCTH60N120G2-7

ECCN (EU):

NEC

Packing Type:

Tape and Reel

Operating Temperature (°C)

Min:

-

Max:

-

Country of Origin:

CHINA

Distributor Name

Distributor reported inventory date:

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors