ST Life.augmented


ST’s MOSFET portfolio offers a broad range of breakdown voltages from -500 V to 1500 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. ST’s process technology for both high-voltage MOSFETs (MDmesh™) and low-voltage MOSFETs (STripFET™) has enhanced power handling capability, resulting in high-efficiency solutions.

The main features of our wide portfolio include:

  • -500 V to 1500 V breakdown voltage range
  • More than 30 package options including the new 4-lead TO247-4 featuring a dedicated control pin for increased switching efficiency, the H2PAK for high-current capability, the 1-mm-high surface-mount PowerFLAT™ 8x8 HV and the PowerFLAT 5x6 HV and VHV featuring excellent thermal performance thanks to a large exposed metal drain pad
  • Improved gate charge and lower power dissipation to meet today’s challenging efficiency requirements
  • Intrinsic fast body diode option for selected product lines
  • Wide portfolio of automotive-grade MOSFETs

In each voltage range supporting applications such as switch mode power supplies, lighting, DC-DC converters, motor control and automotive applications, ST has the right MOSFET for your design.


Two new SMD power packages extend power MOSFET portfolio

ST has extended its product portfolio of high-voltage (600/650 V) and very-high-voltage (800 V) MOSFETs with the addition of two new SMD power package options, the PowerFLAT 5x6 HV (1.9 mm creepage distance) and the PowerFLAT 5x6 VHV (2.7 mm creepage distance). With a 52% smaller footprint than the popular DPAK and a thickness of only 1 mm, they are ideal for highly efficient and compact designs in applications such as solar microinverters, battery chargers and computer power supplies. A large exposed metal drain pad optimizes heat dissipation.
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