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N-Channel (>650V)

ST’s MOSFETs with a breakdown voltage > 650 V offer low gate charge and low on-resistance down to 0.690 Ω (1200 V) in the TO-247 package. They are optimized to meet a broad range of requirements for SMPS, PV-inverter, 3-phase power supply and motor control applications. Specific voltages available include 700 V, 800 V, 850 V, 900 V, 950 V, 1000 V, 1200 V and 1500 V.

MOSFET features for this voltage rating include:

  • Excellent switching behavior
  • 1500 V avalanche rated devices
  • Fully-isolated high-creepage TO-3PF for industrial applications

These MOSFETs are available in a wide range of industry-standard compact and high dissipation packages such as DPAK, IPAK, D2PAK, I2PAK, H2PAK, ISOTOP, PowerFLAT 5x6 VHV, TO-220, SOT-223, TO-247, and TO-3PF.

High-voltage SuperMESH 5 MOSFETs feature lowest FOM

ST's SuperMESH 5 MOSFETs are the industry's first super-junction MOSFETs capable of withstanding peak voltages up to 950 V. The portfolio also includes 800 V, 850 V and 900 V devices and offers the best-in-class figure of merit. This enables designers to meet the stricter power and efficiency targets set by eco-design standards and to target green-energy applications such as solar micro-generators and charging points for electric vehicles.

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