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With a 950 V to 1050 V breakdown voltage, MDmesh™ DK5 MOSFETs are ST’s first very-high voltage fast recovery diode series of N-channel power MOSFETs. They feature a very low gate charge, as low as 45 nC, and the industry’s best reverse recovery time (trr) of 250 ns (typ.), making them ideal for ZVS LLC resonant converters in high-power applications such as industrial welders, plasma generators, high-frequency induction melting/heating and X-ray machines. Power MOSFETs are belonging to the STPOWER™ family.

Thanks to the industry’s lowest on-resistance (RDS(on)) of 0.12 Ω (VGS = 10 V, ID = 23 A ) and excellent ruggedness, the MDmesh DK5 fast diode MOSFET series is also suitable for hard switching topologies.

MDmesh DK5 N-channel VHV MOSFETs are available in a wide range of through-hole and SMD power packages including long-lead TO-247 and ISOTOP packages.

Main characteristics

  • Industry’s best Qg (45 nC) among fast diode MOSFETs
  • Lowest reverse recovery charge (250 ns typ.) among very-high voltage fast diode MOSFETs
  • Industry’s lowest RDS(on) (0.12 Ω in Max247 and ISOTOP packages)
  • Extremely good Coss/Ciss profiles

Our wide STPOWER™ product portfolio combined with state-of-the art packaging and protections for high reliability and safety helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime.


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