ST’s 600 to 650 V IGBTs supply a maximum collector current ranging from 3 A up to 150 A for applications with an operating frequency of up to 100 kHz. Versions are also available with a tailored built-in anti-parallel diode for design optimization. This voltage range is achieved with ST’s proprietary standard punch-through PowerMESH technology and the newly introduced trench-gate field-stop technology.
Target applications for these 600 to 650 V IGBTs include home appliances, induction heating, photovoltaics, UPS, welding and lighting. The available package options are D2PAK, DPAK, ISOTOP, Max247, TO-220, TO-220FP, TO-247, TO-247 long leads, TO-3PF.
650 V trench-gate field-stop IGBTs
The field-stop technology is based on a back-implanted collector and buffer layer, resulting in a very fast and tight response at the turn off. By also featuring trench-gate technology, which increases channel density to further reduce conduction losses, TGFS IGBTs realize significant efficiency gains. In addition, the reduced die thickness permitted by TGFS enhances the transistor’s thermal performance, increasing reliability and simplifying the design of thermal management.