STGPL6NC60D
Product Page
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This new extremely fast switching IGBT (20 ns @ 100 °C) has been designed for lighting applications such as high-frequency ballasts, SMPSs and PFCs, as well as hard switching. Based on ST’s proprietary PowerMESH technology and benefiting from a new lifetime control technique, this new device exhibits very low turn-off energy (4.5 µJ @ 1.5 A, snubber capacitor 2.7 nF). An optimum trade-off between on-state voltage and switching losses allows very high operating frequencies. It represents an ideal solution in hard switching and in resonant topologies where high performance is as essential as cost. Four package options are available for this device:
DPAK - STGDL6NC60DT4
D2PAK - STGBL6NC60DT4
TO-220 - STGPL6NC60D
TO-220FP - STGFL6NC60D
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| STGPL6NC60D Main
Features And Benefits |
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IC @ 100 °C = 8 A
Low Cres / Cies ratio
VCES = 600 V (min)
VCE(sat) @ 125 °C = 2.1 V (typical)
Co-packaged diode
Low conduction losses
Low turn-off switching losses
Very high operating frequencies
No cross-conduction susceptibility
Trade-off between cost and performance
STGPL6NC60D vs. Power
MOSFETs |
In order to evaluate the performance of the new device, a preliminary
comparison was made between the new STGPL6NC60D and two standard
technology (non superjunction) Power MOSFETs.
Device
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IC
@ 100 °C
[A] |
VCES
/
VDS
[V] |
RDS
(on)
@
VGS = 10 V
[Ω] |
VCE(sat)
@
TC = 25 °C
VGE = 10 V
IC = 3 A
[V] |
|
8 |
600 |
- |
2.1 |
Power MOSFET #1 |
4.4 |
500 |
1.22 |
- |
Power MOSFET #2 |
5.6 |
500 |
0.93 |
- |
Performance comparison between STGPL6NC60D and standard technology
Power MOSFETs
High frequency ballast 2x54 W schematic
The system used in the analysis was a 2 x 54 W (with T5 tube) high
frequency ballast typical to lighting applications. The switching
frequency was 43 kHz, and the inverter topology was realized with
a half bridge configuration. In this application by only increasing
the snubber capacitor (Cs), STGPL6NC60D showed much better thermal
behavior. By increasing Cs, the junction temperature (Tj) decreases.
Since the power dissipation is proportional to Tj, lower temperatures
mean lower power dissipation.
STGPL6NC60D’s total power dissipation is much lower than that
of MOSFET #1. STGPL6NC60D shows lower on-state power losses, but
being slower than the MOSFET, STGPL6NC60D shows higher switching
losses. Since MOSFET #2 has a much bigger die area than STGPL6NC60D,
the same thermal behavior was seen.
Comparison between the total power dissipation, (conduction
and switching losses) of STGPL6NC60D and Power MOSFET #1 (similar
die area)
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| Excellent Cost
Performance Trade-off |
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Experimental data shows that STGPL6NC60D realizes the best trade-off
between cost and performance; in other words, it is able to offer
better performance than MOSFETs with the same silicon area, and
similar performance to bigger MOSFETs. |
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