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The need to provide system designers with a complete product portfolio has led ST to extend its medium voltage product range. A new 200V technology has been specifically developed to match the requests for the lowest RDS(on) and Qg.
This technology represents a turning point when compared with the previous generations. Parts made with this new technology can be identified by the letter "N" inside the salestype. |
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Greater Overall Efficiency |
This new process, is based on ST’s successful proprietary planar technology. The silicon design optimization has brought an overall increase in the efficiency due to the reduced conduction and switching losses.
In fact, the RDS(on) is about 42% smaller than the previous technology, while the figure of merit is an outstanding 68%.
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The table below shows a comparison between the traditional 200V STripFET process and the new one.
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PARAMETER |
Traditional STripFET |
NEW STripFET |
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Channel Per./Area |
10.5 m/cm2 |
17 m/cm2 |
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Ron * Area |
18 mOhm; * cm2 @ 10V |
10.4 mOhm; * cm2 @ 10V |
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Ron * Qg |
7614 mOhm; * nC @ 10V |
2430 typ mOhm; * nC @ 10V |
The exceptional RDS(on) is obtained through different steps:
 The edge structure optimization with a better epitaxial specification improves RDS(on).
The JFET optimization implies a modification of the layout in order to enhance the density of the equivalent cells, further reducing the RDS(on).
The reduced total Qg makes this device suitable for high frequency switching operation.
At the same time the switching performance has been improved by implementing a new gate oxide structure for a resulting low input capacitance and total gate charge.
Elementary contributions to the total RDS(on)
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| The Power MOSFETs created with this new technology are used primarily as primary switches in forward, half-bridge bridge or push-pull power converter topologies for power modules in telecom, datacom and networking systems.
Moreover, the excellent electrical performances also make them ideal for UPS and UHP lamps.
New STripFET figure of merit (Ron x Qg) shows a lower value than competition
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