 SuperMESH Product Selector
ST has recently tried to explore all potentialities of the standard technology in order to offer a complete series of solutions; this has resulted in the development of the SuperMESH that represents the extreme optimization of the basic standard Mesh Overlay technology.
Also in this case we integrated gate-to-source Zener diodes. |
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SuperMESH Features and Benefits |
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The STP13NK60Z, a 600V MOSFET with typical on-resistance of 460m ohm, and the 500V STP14NK50Z, whose typical on-resistance 330m ohm, both in TO-220 package, are the first devices available for sampling.
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SuperMESH (NK family) MOSFETs have better than 30% lower on-resistance (than previous generation (NC-family) devices. This allows our customers smaller heatsink and cost saving.
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The SuperMESH family has built-in, back-to-back Zener diodes between the gate and source terminals. These Zener diodes improve resistance to destructive electrostatic discharges as well as protecting the gate oxide against damage from spurious voltage spikes. Because they are built-in, they preclude the need for external protection diodes.
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Reduced threshold spread, VGS , from 2V to 1.5V that allows optimized driving control.
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A comparison between the new SuperMESH device STP13NK60Z and the existing STP9NB60 and STP9NC60 of comparable die-size enables us to see the R DS(on) improvements:
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STP13NK60Z |
| BV DSS (V) |
600 |
| ID (A) |
10 |
| VGS (V) |
3 - 4.5 |
| RON (ohm) |
0.55 |
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The following table gives a detailed dynamic comparison for devices with same RDS(on). A die enlargement from 25mm² to 34mm² in TO-220 and D²PAK at the same voltage level (600V) will result in on-resistance being lower than 0.4 ohm, and this is still standard technology.
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STP10NK60Z |
| BV DSS (V) |
600 |
| Ciss (pF) |
1,370 |
| Coss (pF) |
156 |
| Crss (pF) |
37 |
| Qg (nC) |
46 |
| trr (ns) @25°C |
410 |
| Body-Drain Diode |
dv/dt=4.5V/ns
di/dt=200A/µs |
ESD (HBM)
VGS (V) |
5,900 |
| (RON*Qg) |
34 |
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High Voltage Technology Evolution |
Over the last five years spectacular results have been obtained by ST in improving and optimizing the high voltage sub-range (> 400V) of MOSFETs. The successful introduction of the “NB” (also referred to as PowerMESH I) series is still considered an ideal compromise between performance and competitiveness.
Following the market trend and in line with customers’ needs a second generation, the “NC” or PowerMESH II series, was introduced. They basically improved the performance-to-price ratio in favour of better competitiveness. Such a step enabled us to consolidate our position in volume-driven markets. A variant of this technology (PowerMESH III) has also been brought to production to further enlarge the range with 700V, 800V, and 900V (“NCxxZ series) products that also include back-to-back Zener diodes between gate and source.
The development and industrialization of the revolutionary MDmesh brought a drastic improvement in on-resistance and unique switching performance.
SuperMESH devices cover various core business applications such as off-line and switch-mode power supplies, adaptors, battery chargers, power factor correctors, lamp ballasts, and high-intensity discharge lamps.
The expansion from 700V to 1000V will allow ST to consolidate its world leadership in high voltage and high power SMPS applications from 200W up to 1kW and more. It is worth mentioning that the lower RDS(on) obtainable in the TO-247 package, was until now only possible with larger packages such as the ISOTOP and the clip mounted Max247. This increased diversity enables the SuperMESH family to boast of more than 50 product lines distributed from 300V to 1000V and assembled in a wide variety of packages (from PowerFLAT to TO-247). Further expansion will include the ISOTOP for highend and professional applications.
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Excellent Dynamic Features For Lighting |
Evaluation of 500V and 600V “NK...Z” devices in some high frequency ballasts, demonstrates that this technology, thanks to the very good static (RDS(on)*Area) and dynamic performances (dv/dt), are ideal for HF ballast applications either for power factor correction, or bridge section. In particular the most severe field tests (such as bulb removal from the powered lamps) demonstrated the ruggedness of SuperMESH with respect to dv/dt stress.
Below an example of the test performed on one of the most common devices for ballast application, shows that a high value of dv/dt stress is easily sustained.
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