STS8DNH3LL
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STS8DNF3LL
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STS9D8NH3LL
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The market’s tendency to move towards smaller notebooks
and telecom systems, coupled with the increasing demand for high
efficiency in synchronous buck converters used in Voltage Regulator
Modules (VRMs) and POLs, has created a demand for Power MOSFETs
in a dual package with very high performance in terms of overall
electrical behavior (during switching transients and ON state).
The new STS9D8NH3LL housed in SO-8 dual package, easily meets these
requirements.
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STS9D8NH3LL has two die, one dedicated to high side switching, optimized
to reduce switching losses, and another dedicated to the low side,
optimized to reduce conduction losses in the synchronous buck converter.
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Optimal RDS(on) x Qg trade-off @ 4.5 V
Conduction losses reduced
Switching losses reduced
Double island SO-8 package
This application specific Power MOSFET has been designed to replace
two SO-8 packages in DC-DC converters.
In order to demonstrate the benefits obtained by using the STS9D8NH3LL,
a test was performed on the PM6680 demoboard assuming the following
conditions:
Vin = 12 V
VPHASE-1 = 1.5 V
VPHASE-2 = 1.05 V
fsw = 380 kHz
Tamb = 25 °C
PM6680 is a dual step-down controller (1.5 V and 1.05 V); each section
is a single phase DC/DC converter, with a Schottky diode in parallel
with the low-sides. As demonstrated by the tests, the STS9D8NH3LL
has the highest efficiency in the overall current range, in both
converter sections (1.5 V and 1.05 V) due to the lower high side
Qg and lower low side RDS(on).
STS9D8NH3LL shows a higher efficiency level in both 1.5V and
1.05V sections
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| STSxD8Nx3LL Product
Range |
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The STSxD8Nx3LL range of devices in a dual SO-8 package, represent
the best choice for notebook and server applications. The current
product range will soon be enlarged to include other devices from
the new STripFET V technology.
Part
Number
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BVDSS
[V] |
RDS(on)
max
@ 10 V
[Ω] |
Qg typ
@ 4.5 V
[nC] |
Q1 |
Q2 |
Q1 |
Q2 |
|
30 |
0.022 |
0.022 |
7 |
7 |
|
30 |
0.020 |
|
12.5 |
12.5 |
|
30 |
0.022 |
0.015 |
7 |
9 |
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