 SuperMESH3 technology is a combination of ST’s well established strip-based PowerMESH™ layout with the optimization of the vertical structure.
The increased performance and reduced energy losses via the improvement in the on-resistance compared to the previous generation, the exceptional dv/dt capability and higher margin in breakdown voltage make this innovative product portfolio highly suited for lighting and SMPS applications.
SuperMESH3 vs. SuperMESH technology: Improved diode reverse characteristics |
The SuperMESH3 irradiation process reduces trr and recovery charge by up to 2 times compared to standard SuperMESH technology.
RDS(on) |
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The figure above compares SuperMESH3 versus SuperMESH: Diode recovery current waveform and Trr. |
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SuperMESH3 MOSFETs at 620 V and soon in 525 V offer reduced RDS(on), Coss and Trr. This innovative technology is perfect for applications in which the reduction of both conduction and switching losses with higher safety margins are important. The technology is particularly suitable for lighting electronic ballast designs, where they are used in the PFC and half-bridge sections, as well as in the LCD TV SMPS blocks, where they can be used mainly in the standby block. |
| SuperMESH3 RDS(on) per area versus competition |
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number |
Ratio |
Ron max x area
[ohmmm2] |
Ron typ per area
[ohmmm2] |
| STP6N62K3 |
100.0% |
14.7 |
12.7 |
First comp. |
115.0% |
15.9 |
13.2 |
Second comp. |
114.0% |
16.4 |
11.8 |
Third comp. |
135.0% |
19.4 |
14.0 |
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SuperMESH3 achieves lower conduction losses through the improvement of RDS(on) x area, which is almost 20% less compared to SuperMESH and competing technologies (STx6N62K3) |
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Faster switching speed than the competition thanks to the combined effects of gate charge, high Vth and low gfs (STP6N62K3). |
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Crossing time is 30% lower than competitors (STP6N62K3). |
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Under the same conditions, the ratio of Coss stored energy and consequently Coss power loss of the STP6N62K3 shows an enhanced behavior versus competition, resulting in a low switched voltage and only 80% of the power losses of competitors (when it switches at a drain voltage higher than 200 V). |
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| Datasheets and product selector |
 SuperMESH3 |
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| Features |
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| Benefits |
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Lower conduction losses |
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More reliable applications |
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Reduced switching losses |
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| Applications |
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| Promotional documents |
| Title |
Reference |
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| Power MOSFETs selection guide |
SGMOS0209 |
Download (Oct. 2007, 893 Kb) |
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