STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1
N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D2/I2PAK MDmeshTM Power MOSFET
General features
Type STB12NM50 STB12NM50-1 STP12NM50 STP12NM50FP
VDSS (@Tjmax) 550V 550V 550V 550V
RDS(on) <0.35 <0.35 <0.35 <0.35
ID 12A 12A 12A 12A
3 1
3 1 2
3 1 2
TO-220
TO-220FP
High dv/dt and avalanche capabilities Low input capacitance and gate charge 100% avalanche tested Low gate input resistance Tight process control and high manufacturing yields
D²PAK
3 12
I²PAK
Internal schematic diagram
Description
The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
Applications
Switching application
Order codes
Part number STB12NM50T4 STB12NM50-1 STP12NM50 STP12NM50FP Marking B12NM50 B12NM50 P12NM50 P12NM50FP Package D²PAK I²PAK TO-220 TO-220FP Packaging Tape & reel Tube Tube Tube
July 2006
Rev 11
1/17
www.st.com 17
Contents
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . .. . .. . .. . .. . .... 6
3 4 5 6
Test circuit
. . .. . .. . .. . .. . .. . .. . .. . .. . .... 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Value Parameter TO-220/D²PAK/I²PAK 30 12 7.5 48 160 1.28 -15 -65 to 150 12
(1) (1)
Unit TO-220FP V A A A W W/C V V/ns C
VGS ID ID IDM(2) PTOT
Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating Factor
7.5
48(1) 35 0.28 2500
VISO dv/dt(3) TJ Tstg
Insulation winthstand voltage (DC) Peak diode recovery voltage slope Operating junction temperature Storage temperature
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 2A, di/dt 00A/s, VDD =80%V(BR)DSS 1 4
Table 2.
Thermal data
Value
Symbol
Parameter
TO-220/D²PAK/ I² PAK
Unit TO-220FP 3.57 C/W C/W C
Rthj-case Rthj-a Tl
Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose
0.78 62.5 300
Table 3.
Symbol IAS EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (star ting Tj=25C, Id=Iar, Vdd=50V) Value 6 400 Unit A mJ
3/17
Electrical characteristics
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS= 0 VDS = Max rating, VDS = Max rating @125C VGS = 30V VDS= VGS, ID = 50A VGS= 10V, ID= 6A 3 4 0.30 Min. 500 1 10
100
Typ.
Max.
Unit V A A nA V
5 0.35
Table 5.
Symbol gfs (1) Ciss Coss Crss
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS =15V, ID = 6A Min. Typ. 5.5 1000 250 20 90 20 10 28 8 18 1.6 39 Max. Unit S pF pF pF pF ns ns nC nC nC
VDS =25V, f=1 MHz, VGS=0
Equivalent output Coss eq(2). capacitance td(on) tr Qg Qgs Qgd Rg Turn-on Delay Time Rise Time Total gate charge Gate-source charge Gate-drain charge Gate input resistance
VGS=0, VDS =0V to 400V VDD = 250V, ID = 6A, RG = 4.7, VGS = 10V (see Figure 14) VDD=400V, ID = 12A VGS =10V (see Figure 15) f=1MHz Gate DC Bias=0 test signal level=20mV open drain
1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS
4/17
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
Electrical characteristics
Table 6.
Symbol ISD ISDM(1) VSD(2) t rr Qrr IRRM t rr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=12A, VGS=0 ISD=12A, di/dt = 100A/s, VDD=100V, Tj=25C (see Figure 16) ISD=12A, di/dt = 100A/s, VDD=100V, Tj=150C (see Figure 16) 270 2.23 16.5 Test conditions Min Typ. Max 11 48 1.5 Unit A A V ns C A
Reverse recovery time Reverse recovery charge Reverse recovery current
340 3 18
ns C A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
5/17
Electrical characteristics
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Safe operating area for TO-220FP
Figure 4.
Thermal impedance for TO-220FP
Figure 5.
Output characterisics
Figure 6.
Transfer characteristics
6/17
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 Figure 7. Transconductance Figure 8.
Electrical characteristics Static drain-source on resistance
Figure 9.
Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage vs temperature
Figure 12. Normalized on resistance vs temperature
7/17
Electrical characteristics Figure 13. Source-drain diode forward characteristics
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
8/17
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
Test circuit
3
Test circuit
Figure 15. Gate charge test circuit
Figure 14. Switching times test circuit for resistive load
Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
9/17
Package mechanical data
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
10/17
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
Package mechanical data
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP M AX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. M AX . 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
øP
Q
11/17
Package mechanical data
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø
A
B
L3 L6 L7
F1 F
D
G1 H
F2
L2 L5
E
123
L4
12/17
G
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
Package mechanical data
D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 T YP M AX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
3
1
13/17
Package mechanical data
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
TO-262 (I2PAK) MECHANICAL DATA
mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch
14/17
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
Packaging mechanical data
5
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1. 5 12.8 20.2 24.4 100 30. 4 26. 4 13. 2 mm MIN. MAX . 330 0. 059 0.504 0.520 0795 0.960 1.039 3. 937 1.197 BULK QTY 1000 i n ch MIN. MAX. 12. 992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MI N. 10. 5 15. 7 1.5 1. 59 1. 65 11.4 4.8 3.9 11.9 1.9 50 0. 25 23. 7 24.3 MAX. 10.7 15.9 1. 6 1.61 1.85 11.6 5. 0 4. 1 12.1 2. 1 i n ch MI N. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
15/17
Revision history
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
6
Revision history
Table 7.
Date 14-Mar-2004 15-Feb-2006 05-Apr-2006 27-Jul-2006
Revision history
Revision 8 9 10 11 Preliminary version New voltage value on first page at tjmax. Inser ted ecopack indication New template, no content change Changes
16/17
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
17/17
|
