AN2228 APPLICATION NOTE
STD1LNK60Z-based Cell Phone Battery Charger Design
Introduction
This application note is a Ringing Choke Converter (RCC)-based, step-by-step cell phone battery charger design procedure. The RCC is essential to the self-oscillating fly-back converter, and operates within the Discontinuous Conduction Mode (DCM) and Continuous Conduction Mode (CCM) boundaries without noticeable reverse recovery of the output rectifying diodes. RCC control is achieved by using discrete components to control the peak current mode, so the overall RCC cost is relatively low compared to the conventional Pulse Width Modulation (PWM) IC fly-back converter. As a result, RCC is widely used for low power applications in industry and home appliances as a simple and cost-effective solution. Figure 1. STD1LNK60Z-based RCC Printed Circuit Board
Top View
Bottom View
September 2005
Rev 1.0 1/26
http:/ww w.st .com
26
AN2228 - APPLICATION NOTE
Table of Contents
1 Power Transformer Design Calculations . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1 .1 1 .2 1 .3 1 .4 1 .5 1 .6 1 .7 1 .8 1 .9 Switching Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 STD1LNK60Z MOSFET Turn Ratio . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Primar y Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Primar y Inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Magnetic Core Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Primar y Winding . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Secondary Winding . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Auxiliary Winding . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Gap Length . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2
STD1LNK60Z-based RCC Control Circuit Components . . . . . . . . . . . . . 12
2 .1 2 .2 2 .3 2 .4 2 .5 2 .6 2 .7 MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 R3 Startup Resistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Optocoupler Power Methods . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 R7 Sense Resistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Constant Power Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Zero Current Sense . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Constant Voltage And Constant Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3
Test Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Appendix A: STD1LNK60Z-based RCC Circuit Schematics . . . . . . . . . . 22 Appendix B: STD1LNK60Z-based RCC Circuit Bill of Materials . . . . . . . 23
4
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
2/26
AN2228 - APPLICATION NOTE
Figures
Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. STD1LNK60Z-based RCC Printed Circuit Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Optocoupler Fly-back Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Optocoupler Forward Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Current Sense Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 CV and CC Curve at 110VAC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 CV and CC Curve at 220VAC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Drain To Source Voltage Operation Waveform, 85VAC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Drain To Source Voltage Operation Waveform, 110VAC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Drain To Source Voltage Operation Waveform, 220VAC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Drain To Source Voltage Operation Waveform, 265VAC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 RCC Control Circuit Components Schematic (see Section on page 1) . . . . . . . . . . . . . . . 22 STD1LNK60Z-based RCC Schematic (full view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3/26
AN2228 - APPLICATION NOTE
Tables
Table 1. Table 2. Table 3. Table 4. Line and Load Regulation . . . . . . . . . . . . . . . . . . . . Efficiency Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . Standby Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . BOM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... . . ... . . ... . . ... . . .. . . .. . . .. . . .. . . ... . . ... . . ... . . ... . . .. . . .. . . .. . . .. . . . . 19 . . . . 19 . . . . 19 . . . . 23
4/26
AN2228 - APPLICATION NOTE
1 Power Transformer Design Calculations
1
Power Transformer Design Calculations
The specifications: VAC = 85~265V VO = 5V IO = 0.4A I O ( m a x ) = 1. 2 I O = 4. 8 A Line frequency: 50~65Hz
Taking transient load into account, the maximum output current is set as
1.1
Switching Frequency
The system is a variable switching frequency system (the RCC switching frequency varies with the input voltage and output load), so there is some degree of freedom in switching frequency selection. However, the frequency must be at least 25kHz to minimize audible noise. H igher switching frequencies will decrease the transformer noise, but will also increase the level of switching power dissipated by the power devices. The minimum switching frequency and maximum duty cycle at full load is expressed as f S ( m i n ) = 50 k H z D m a x = 0. 5 w here the minimum input voltage is 50kHz and 0.5, respectively.
5/26
1 Power Transformer Design Calculations
AN2228 - APPLICATION NOTE
1.2
STD1LNK60Z MOSFET Turn Ratio
The maximum MOSFET drain voltage must be below its breakdown voltage. The maximum drain voltage is the sum of:
input bus voltage, secondar y reflected voltage, and voltage spike (caused by the primary parasitic inductance at maximum input voltage).
The maximum input bus voltage is 375V and the STD1LNK60Z MOSFET breakdown voltage is 600V. Assuming that the voltage drop of output diode is 0.7V, the voltage spike is 95V, and the margin is at least 50V, the reflected voltage is given as: V f l = V ( B R ) D S S V m a rg i n V D C ( m a x ) V s p k = 6 0 0 5 0 3 7 5 9 5 = 8 0 V The Turn Ratio is given as Np Vf 80 N = ------ = -----------------l---------- = ----------------- = 14 Ns VOU T + VF 5 + 0. 7 w here, Vfl = Secondary reflected voltage V(BR)DSS = MOSFET breakdown voltage Vmargin = Voltage margin VDC(max) = Maximum input bus voltage Vspk = Voltage spike Vf = Voltage drop N = Turn Ratio Np = Primary Winding Turns Ns = Secondary Winding Turns
6/26
AN2228 - APPLICATION NOTE
1 Power Transformer Design Calculations
1.3
Primary Current
Primar y Peak Current is expressed as: 2 VO I O (m a x ) 2 × 5 × 0. 48 I p p k = ------------------------------------------ = ----------------------------------- = 0.152 A 0.7 × 0.5 × 90 Dm a x VD C ( m i n )
Primar y Root Mean Square (RMS) Current is expressed as Dm a x .5 I p r m s = I p p k ------------- = 0.152 × 0---- = 0.062 A --3 3
w here, Ippk = Primary peak current VO = Voltage output IO(max) = Maximum current output
= Efficiency, equal to 0.7
Dmax = Maximum duty cycle VDC(min) = Minimum input bus voltage Iprms = Primary RMS current
1.4
Primary Inductance
Pr imar y Inductance is expressed as VD C ( i n Dm a x 90 × 0. 5 Lp = --------------m------)-------------- = --------------------------- = 5.92 m H --- 0. 152 × 50 fs ( m i n )I p p k w here, VDC (min) = Minimum Input DC voltage fs (min) = Minimum switching frequency Dmax = Maximum duty cycle fs(min) = Minimum switching frequency Ippk = Primary peak current For example, if Primary Inductance is set to 5.2mH, the minimum switching frequency is: VI N D C( m n ) D m a x 90 × 0.5 f s ( m i n ) = ------------------------i------------------- = ---------------------------- = 57 k H z 0.152 × 5.2 Lp I p p k
7/26
1 Power Transformer Design Calculations
AN2228 - APPLICATION NOTE
1.5
Magnetic Core Size
One of the most common ways to choose a core size is based on Area Product (AP), which is the product of the effective core (magnetic) cross-section area times the window area available for the windings. U sing a EE16/8 core and standard horizontal bobbin for this particular application, the equation used to estimate the minimum AP (in cm4) is shown as
1.316 L p Ip r m s 3 A P = ---------------------------------× 10 0.5 k u Bm a x T
w here, Lp = Primary Inductance Iprms = Primary RMS current ku = Window utilization factor, equal to: 0.4 for margin wound construction, and 0.7 for triple insulated wire construction
Bmax = Saturation magnetic flux density
T = Temperature rise in the core
1.6
1.6.1
Primary Winding
Winding Turns
The effective area of an EE16 core is 20.1mm2 (in the core's datasheet). The number of turns of primary winding is calculated as V D C ( m i n) D m a x 90 × 0.5 N p = -------------------------------------- = ---------------------------------------------------------------------------- = 179 6 3 fs ( m i n ) B Ae 0.22 × 20.1 × 10 × 57 × 10 w here, Np = Primary Winding Turns VDC (min) = Minimum Input DC voltage Dmax = Maximum duty cycle fs(min) = Minimum switching frequency
B = Flux density swing
Ae = Effective area of the core
8/26
AN2228 - APPLICATION NOTE
1 Power Transformer Design Calculations
1.6.2
Wire Diameter
The current density (AJ) allowed to flow through the chosen wire is 4A/mm2. The Copper diameter of primary wire is expressed as dp = w here, dp = Diameter of primary winding wire Iprms = Primary RMS current AJ = Current density 4 Ip r m 4 × 0. 062 ---------------s = ---------------------- = 0.142 m m AJ 4×
1.6.3
Number of Primary Winding Turns per Layer
The EE16 bobbin window is about 9mm, so if the enamel wiring chosen has a 0.21mm outer diameter and a 0.17mm Copper diameter, the number of turns per layer is expressed as 90 N p 1 = ---------- = 43 0. 21 w here, Np1 = Layer 1 Primary Winding Turns Np1 = 42 turns per layer, 4 layers needed Np = 168 (total turns for all 4 layers)
1.6.4
Practical Flux Swing
U sing the Np = 168 value, the practical flux swing is expressed as V DC i n )Dmax 90 × 0. 5 B = ------------(-m--------------------- = -------------------------------------------------------------------------- = 0.234 T ---6 3 fs (m i n )Ae N p 168 × 20. 1 × 10 × 57 × 10 w here,
B = Flux density swing
VDC(min) = Minimum input bus voltage Dmax = Maximum duty cycle fs(min) = Minimum switching frequency Ae = Effective area of the core Np = Primary Winding Turns
9/26
1 Power Transformer Design Calculations
AN2228 - APPLICATION NOTE
1.7
Secondary Winding
U sing triple insulation wire with a 0.21mm Copper diameter, the number of turns of secondary winding is expressed as Np 168 N s = ------ = --------- = 12 N 14 w here, Ns = Secondary Winding Turns Np = 168 (total turns for all 4 primary winding layers) Np = Primary Winding Turns N = Number of turns per primary winding layer
1.8
1.8.1
Auxiliary Winding
Winding Turns
The MOSFET gate voltage at minimum input voltage should be 10V to conduct the MOSFET completely. For this application, the optocoupler is powered by the fly-back method, so the number of auxiliary winding turns of auxiliary winding is calculated as VD ( m i ) N a ( Vo + VF ) Na V g = ---------C----------n---------- + ---------------------------------- > 10 ---Ns Np w here, Vg = Gate voltage VDC(min) = Minimum input bus voltage Na = Auxiliary Winding Turns Np = Primary Winding Turns Vo = Optocoupler voltage VF = Fly-back voltage Ns = Secondary Winding Turns
10/26
AN2228 - APPLICATION NOTE
1 Power Transformer Design Calculations
1.8.2
Wire Diameter
W ith the auxiliary winding turns set to 11 (Na =11), the enamel wire chosen has a 0.21mm outer diameter and a 0.17mm Copper diameter. The Copper diameter of primary wire is expressed as 1--0 --N a > ----------------------------0------------------------ = ----------1------------- = 10 V D C ( m i n ) V o + V F 95 + 5.7 -------------------------- + --------------------- -------- -----168 1 2 N N
p s
1.9
Gap Length
The gap length setting is based on the number of primary winding turns and primary inductance during the manufacturing process. N ote: In practice, the saturation current value must be ensured. If it is not, then the design activity should be restarted.
11/26
2 STD1LNK60Z-based RCC Control Circuit Components
AN2228 - APPLICATION NOTE
2
STD1LNK60Z-based RCC Control Circuit Components
MOSFET
The STD1LNK60Z (see Appendix A: STD1LNK60Z-based RCC Circuit Schematics on page 22) has built-in, back-to-back Zener diodes specifically designed to enhance not only the Electrostatic Discharge (ESD) protection capability, but also to allow for possible voltage transients (that may occasionally be applied from gate to source) to be safely absorbed.
2.1
2.2
2.2.1
R3 Startup Resistor
Minimum Power Dissipation
The startup resistor R3 is limited by its power dissipation because of the high input bus voltage that moves across it at all times. However, the lower the R3 value is, the faster the startup speed is. Its power dissipation should be less than 1% of the converter's maximum output power. The minimum power dissipation value is expressed as
------------------------------ < 1 p e r c e n t × ----------------------------
VD C (m a x ) R3
2
Vo Io ( m a x )
6 0.7 × ---75 R 3 > ----------------------------------------------- = -----------------------3----------------- = 4.1 × 10 0.01 × V o I o ( m a x ) 0.01 × 5 × 0.48
VD C (m a x )
2
2
2.2.2
Maximum Power Dissipation
If R3 is set to 4.2M, its max power dissipation is expressed as
2 VD ( m a x ) 3---5 P R 3 ( m a x ) = ---------C--------------- = ----------7------------- = 0.0335 W --6 R3 4.2 × 10
2.2.3
Startup Resistors and the Power Margin
The power rating for an SMD resistor with a footprint of 0805 is 0.125W. Three resistors (1.2M, 1.2M, and 1.8M, respectively) are placed in series to produce the required startup resistor value and still have enough power margin.
12/26
AN2228 - APPLICATION NOTE
2 STD1LNK60Z-based RCC Control Circuit Components
2.3
Optocoupler Power Methods
There are two methods for powering the optocoupler:
fly-back (see Figure 2), and forward (see Figure 3).
The fly-back method was chosen for the RCC application because it provides more stable power for the optocoupler. Figure 2. Optocoupler Fly-back Power
STD1LNK60Z
Q1 R9 R3 R10 C5
R11 R11a
C6 R7 3904
Q2
R12 +
U1B
C7
AI11829
Figure 3.
Optocoupler Forward Power
STD1LNK60Z
Q1 R3 R10 C5
R9 R11a C6 R7 3904 C7 Q2
R11
R12
U1B
+ C4
AI11830
13/26
2 STD1LNK60Z-based RCC Control Circuit Components
AN2228 - APPLICATION NOTE
2.4
2.4.1
R7 Sense Resistor
Minimum Power Dissipation
Sense resistor R7 is used to detect primary peak current. It is limited by its maximum power dissipation, which is set to 0.1% of the maximum power. The minimum power dissipation is expressed as 0. 01 × V I o 0.01 × 5 × 0.48 R 7 < ------------------------o-------(-m-a----- = -------------------------------------- = 8.9 -- -------x ) 2 2 0. 7 × 0. 062 Ip r m s
2.4.2
Maximum Power Dissipation
If R7 is set to 3.4, its maximum power dissipation is expressed as P R 7 ( m a x ) = I p r m s R 7 = 0.062 × 3.4 = 0.013 W
2 2
2.4.3
Sense Resistors and the Power Margin
Two resistors (6.8, and 6.8, respectively) are placed in parallel to produce the required sense resistor value and still have enough power margin. R amp-up voltage (via R7 x Ippk), when added to the DC voltage [(I1+Ie)(R7+R 9)] achieves good output voltage and current regulation (see Figure 4). N ote: The R9 value should be much greater than the R7 value. The minimum primary current, Ippk, and the maximum current, I2, are in a stead state at the minimum load, while the maximum Ippk and the minimum I2 are in a stead state at the maximum load. The cathode current, Ik, of TL431 is limited to 1mA< Ik <100mA, and the maximum diode current of optocoupler PC817 is 50mA. In order to decrease quiescent power dissipation, the maximum operation diode current, IF, of PC817 can be set to 10mA. The Current Transfer Ratio (CTR) of PC817 is about 1:0 at the stead state. As a result, the maximum operation transistor current Ie of PC817 is also set to 10mA. Initially the effect of I1 is neglected. At minimum load, R 7 IF ( m i n) + ( R7 + R 9 ) I e ( m a x) ( R7 + R 9 ) I e ( m a x ) R 9 Ie ( m a x ) < V Q b e At maximum load, R 7 Ip p k + ( R7 + R 9 ) Ie ( m in ) R7 I p p k + R 9 Ie ( m i n ) > V Q b e w here, VQbe = Cut off voltage; when the voltage between the base and the emitter of transistor Q2 reaches this value, MOSFET Q1 is turned off. For the purposes of this application design: R9 = 360, and C6 = 2.2nF; the role of C6 is to accelerate the MOSFET's turning OFF.
14/26
AN2228 - APPLICATION NOTE
Figure 4. Current Sense Circuit
Ippk R9
2 STD1LNK60Z-based RCC Control Circuit Components
Z1
R11 R11a
I1
C6 R7 3904
Q2
R12
U1B
C7
Ie
AI11831
2.5
Constant Power Control
The pole of capacitor C7 can filter the leading edge current spike and avoid a Q2 switch malfunction. However, it will also lead to delays in primary peak transfer as well as the turning on of Q2. As a result, different power inputs are produced at different input voltages. Z1, R11, and R11a provide constant current, which is proportional to the input voltage. This way, power inputs are basically the same at different input voltages. N ote: They must be carefully selected and adjusted to achieve basically constant power input at different input voltages. The basic selection process is expressed as VDC I = ---------- T d Lp w here, I = Current change VDC = Input bus voltage Lp = Primary Inductance Td = Transfer delay In relation to the present RCC application, N a VD C Na ( Vo + VF ) ---------------------- + ------------------------------------- V z 1 VD C Np Ns I R 7 = R 7 ------------- T d = -------------------------------------------------------------------------------------- ( R 9 + R 7 ) Lp R 7 + R 9 + R 11 w here, Na = Auxiliary Winding Turns Np = Primary Winding Turns Vo = Optocoupler voltage VF = Fly-back voltage Ns = Secondary Winding Turns Vz1 = Zener diode 1 voltage
15/26
2 STD1LNK60Z-based RCC Control Circuit Components
AN2228 - APPLICATION NOTE
Note: R11>> R9 >> R7, so in this case, only R11 is used: N a VD C Na ( Vo + VF ) ---------------------- + ------------------------------------- V z 1 VD C Np Ns R 7 ------------- Td -------------------------------------------------------------------------------------- R 9 Lp R 11 N ote: Constant control accuracy is not as good if Z1 is not used, and applying it is very simple. For the purposes of this application design: C7 = 4.7nF, and R11 = 36K.
2.6
Zero Current Sense
C5 blocks DC current during starting up and allow charge to be delivered from the input voltage through starting up resistor until MOSFET turns on for the first time. The MOSFET C5 and input capacitor Ciss form a voltage divider at the MOSFET gate, so C5 value should be ten times more than that of Ciss. This decreases the MOSFET (full) turn-on delay. In this case, C5 = 6.8nF. R10 limits power dissipation of zener diode inside the MOSFET. The selection process is expressed as
V D C ( m a x ) N a ( V o + V F ) N a ------------------------------------ + ---------------------------------- V Z D Np Ns R 10 = -----------------------------------------------------------------------------------------------------I
ZD
w here, VDC(max) = Maximum input bus voltage Na = Auxiliary Winding Turns Np = Primary Winding Turns Vo = Optocoupler voltage VF = Fly-back voltage Ns = Secondary Winding Turns VZD = Zener diode voltage IZD = Zener diode current N ote: If a 20V external zener diode is used and the maximum current of the zener diode is 10mA, the value of R10 is: R10 = 1.5K R12 limits current Ie of PC817, so the value of R12 is: R12 = 1K
16/26
AN2228 - APPLICATION NOTE
2 STD1LNK60Z-based RCC Control Circuit Components
2.7
Constant Voltage And Constant Current
The Constant Voltage (CV) configuration is comprised of the error amplifier TL431, R21, R22, and C11. TL431 provides the reference voltage. R21 and R22 divide the output voltage and compare it with the reference. C11 compensates the error amplifier TL431. R19 limits the optocoupler diode current IF (see Figure 5 and Figure 6 on page 18 for operation characteristics). For the purposes of this application, the devices selected are: R21=1k; R22=1k; C11=100nF; and R19=150.
The Constant Current (CC) can be established simply with a transistor, Q3, R16, R18, R15, and C10. Output current flows through the sense resistor R16. Q3 is turned on when the voltage drop of R16 reaches the same value as the base turn-on voltage of Q3. This increases the current through the optocoupler and the converter goes into constant current regulation. R16 senses the output current, and R18 limits the base current of Q3. The rating power of R16 must then be considered. If Io = 0.4A and Vb = 0.5V, then
b R 16 = ------ = ------- = 1.25 -
V
Io
0. 5 0. 4
Two resistors, one 3.0 and one 2.2, with SMD1206 footprint are placed in parallel to get the required power dissipation and resistance value. Similarly, R15 limits the optocoupler's IF diode current for constant current regulation. C10 compensates the constant current control. For the purposes of this application, the devices are: R15 = 75, R18 = 360, and C10 = 1nF. N ote: The parameters of the remaining transformer devices can be seen in the Bill of Materials (BOM, see Appendix B: STD1LNK60Z-based RCC Circuit Bill of Materials).
17/26
2 STD1LNK60Z-based RCC Control Circuit Components
AN2228 - APPLICATION NOTE
Figure 5.
CV and CC Curve at 110VAC
6 5 4 3 2 1 0 0 0.1 0.2 A 0.3 0.4 0.5
AI11825
Note:
Figure 6.
VDS = 200V/div; time = 4s/div)
CV and CC Curve at 220VAC
6 5 4 3 2 1 0 0 0.1 0.2 A 0.3 0.4 0.5
AI11826
Note:
VDS = 200V/div; time = 4s/div)
18/26
V
V
AN2228 - APPLICATION NOTE
3 Test Results
3
Table 1.
Test Results
Line and Load Regulation
No Load 4.749V 4.750V 4.750V 4.750V Full Load 4.743V 4.743V 4.743V 4.743V Load Regulation 85VAC 110VAC 220VAC 265VAC
Supply Voltage
0.06% 0.06% 0.06% 0.06%
Line Regulation
0.01%
0.0%
Note:
Table 2.
See Figure 7 and Figure 9 on page 21 for operation waveforms.
Efficiency Ratings
85VAC 2.754 4.743 0. 4 1. 9 69.0 110VAC 2.706 4.743 0.4 1.9 70. 2 220VAC 2.918 4.743 0. 4 1. 9 65.1 265VAC 3.006 4.743 0.4 1.9 63.2 Units W V A w %
Description Input power Output voltage Output current Output power Efficiency
Table 3.
Input current Input power
Standby Power
100V DC 0.512A 5 1 mW 160V DC 0.224A 3 6 mW 300VDC 0.222A 67m W 375VDC 0.242A 91mW
Input voltage
19/26
3 Test Results
AN2228 - APPLICATION NOTE
Figure 7.
Drain To Source Voltage Operation Waveform, 85VAC
Note:
Figure 8.
VDS = 100V/div; time = 4s/div
Drain To Source Voltage Operation Waveform, 110VAC
Note:
VDS = 100V/div; time = 4s/div
20/26
AN2228 - APPLICATION NOTE
Figure 9. Drain To Source Voltage Operation Waveform, 220VAC
3 Test Results
Note:
VDS = 200V/div; time = 4s/div)
Figure 10. Drain To Source Voltage Operation Waveform, 265VAC
Note:
VDS = 200V/div; time = 4s/div)
21/26
Appendix A: STD1LNK60Z-based RCC Circuit Schematics
AN2228 - APPLICATION NOTE
Appendix A: STD1LNK60Z-based RCC Circuit Schematics
Figure 11. RCC Control Circuit Components Schematic (see Section 2 on page 12)
VDC R2 C13 R3 T 1N5819 +5V
U1A
R21 R15 C10 R18 R22 R16 R19 C11 TL431
D5
+ 3904 Q3
STD1LNK60Z
Q1 R9 R10 C5 R11 R11a R12
C6 R7 3904
Q2
U1B
C7
+ C4
AI11827
Figure 12. STD1LNK60Z-based RCC Schematic (full view)
D1 1N4007 L1 D2 1mH R2 C3 222/1KV D5 STTH108 R4 Vbs R3 2 T1 16 D7 1N5819 C8 + 330/16V 5 R15 75 C10 102/60V 3 R11 R13 4 R12 1K Z1 Q2 3904 C7 R14 Q3 3904 R18 910 R16 3.0 R17 2.2 CY 102/Y2 R19 150 C11 +5V
U1A
P817 R21 910 R20 2.7
R1 10/1W D3 1N4007
1N4007 150K/1W C1 4.7F/400V C2 4.7F.400V D4 1N4007 Q1
C9 + 47/16V
R5 C5 R6 5.1
R10
0.1u/60V
U2
TL431
R22 1K
STD1LNK60-1
R9 C6 R7 R8
U1B
D6 1N4148
+ C4 100/16V
Vbs
AI11828
22/26
AN2228 - APPLICATION NOTE
Appendix B: STD1LNK60Z-based RCC Circuit Bill of Materials
Appendix B: STD1LNK60Z-based RCC Circuit Bill of Materials
Table 4.
Designator L1 C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 CY R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 R11 R12 R13 R14 R15 R16 R17 R18
BOM
Part Type 1 mH 4.7uF/400V 4.7uF/400V 222/1KV 100u/16V 682/60V 222/60V 472/60V 330u/16V 47u/16V 102/60V 0.1u/60V 102/Y2 10/1W 150K/1W 1.8M 1.2M 1.2M 5.1 6.8 6.8 360 1.5K 36K 1K 5.1 10K 75 3 2.2 910 1W 1/2W 0805A 0805A 0805A 0805A 0805A 0805A 0805A 0805A 0805A 0805A 0805A 0805A 0805A 1206R 1206R 0805 0805A 0805A 0805A 0805A 0805A Foot Print Inductor Electric Capacitor Electric Capacitor Ceramic Capacitor Electric Capacitor SMD Capacitor SMD Capacitor SMD Capacitor Electric Capacitor Electric Capacitor SMD Capacitor SMD Capacitor Y2 Capacitor Resistor Resistor SMD Resistor SMD Resistor SMD Resistor SMD Resistor SMD Resistor SMD Resistor SMD Resistor SMD Resistor SMD Resistor SMD Resistor SMD Resistor SMD Resistor SMD Resistor SMD Resistor SMD Resistor SMD Resistor 10% 10% 5% 5% 5% 5% 1% 1% 5% 5% 5% 5% 5% 5% 5% 1% 1% 5% 1 0 5 C 1 0 5 C 1 0 5 C 8 5 C 8 5 C Description Accurate
23/26
Appendix B: STD1LNK60Z-based RCC Circuit Bill of Materials
AN2228 - APPLICATION NOTE
Designator R19 R20 R21 R22 D1 D2 D3 D4 D5 D6 D7 Z1 Q1 Q2 Q3 U1 U2
Part Type 150 2.7 910 1K 1N4007 1N4007 1N4007 1N4007 STTH108 1N4148 1N5819 Jumper
Foot Print 0805 0805 0805 0805 DO-41 DO-41 DO-41 DO-41 DO-41
Description SMD Resistor SMD Resistor SMD Resistor SMD Resistor Diode Diode Diode Diode Diode Diode ST 5% 5% 1% 1%
Accurate
DO-41
Diode Jumper MO S F E T Bipolar Bipolar Optocoupler
ST
STD1LNK60 IPAK MMB T 3 9 0 4 MMB T 3 9 0 4 P817 TL431 SOT23L SOT23L DIP4 TO92L
ST ST ST Shar p ST
24/26
AN2228 - APPLICATION NOTE
4 Revision History
4
Revision History
Date 22-August-2005 Revision 1.0 First edition Changes
25/26
4 Revision History
AN2228 - APPLICATION NOTE
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
26/26
|
