STPSC10G065
Active
Design Win
650 V, 10A High surge Silicon Carbide power Schottky diode

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Product overview

概要

The SiC diode, available in TO-220AC, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature

Based on latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions. Using the latest design improvement of the “G” series of ST SiC diodes, as well as implemented tests in production, this diode is becoming the reference point in the combination of efficiency and application.

  • All features

    • None or negligible reverse recovery charge in application current range
    • Switching behaviour independent of temperature
    • High forward surge capability
    • Operating Tj from -55 °C to +175 °C
    • ECOPACK2 compliant component

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STPSC10G065

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Quality and Reliability

Part Number Marketing Status Package Grade RoHSコンプライアンスグレード Longevity Commitment Longevity Starting Date Material Declaration**
STPSC10G065D
Active
TO-220AC Industrial Ecopack2 7 2025-03-21T00:00:00.000+01:00

STPSC10G065D

Package:

TO-220AC

Material Declaration**:

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Marketing Status

Active

Package

TO-220AC

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.comで提供している材料宣誓書は、パッケージ・ファミリ内で最も一般的に使用されているパッケージに基づく汎用ドキュメントの場合があります。そのため、特定の製品では100%正確ではない可能性があります。特定の製品情報については、セールスサポートまでお問い合わせください

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STPSC10G065D

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Part Number:

STPSC10G065D

Junction Temperature (°C) (max):

175

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(*)概算用の参考価格(US$)です。現地通貨でのお見積りについては、STのセールス・オフィスまたは販売代理店までお問い合わせください。